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STMicroelectronics STU10P6F6

Part No.:
STU10P6F6
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixSTU10P6F6.pdf
Description:
MOSFET P-CH 60V 10A IPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,574

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Product details

Overview

STU10P6F6 from STMicroelectronics is a P-channel -60 V, 0.13 Ω typ. RDS(on), -10 A Power MOSFET in IPAK (TO-251) package, fabricated using STripFET™ F6 trench-gate technology. It delivers high avalanche ruggedness (80 mJ EAS) and low gate charge (6.4 nC), enabling efficient high-side switching in DC-DC converters, motor drivers, and load-switching circuits.

For engineers reviewing the STU10P6F6 datasheet, STU10P6F6 pinout, STU10P6F6 application, or STU10P6F6 equivalent, key selection criteria include its -60 V VDS, thermal resistance of 7.5 °C/W (j-case), 175 °C max junction temperature, and compatibility with standard gate-drive voltages down to -4 V threshold.

Technical Context

This device operates as a high-voltage P-channel enhancement-mode MOSFET with fully specified avalanche capability and optimized dynamic parameters for hard-switching topologies. Its STripFET™ F6 process enables low RDS(on) while maintaining robust safe operating area (SOA) up to 10 ms at TC = 25 °C.

The IPAK package provides mechanical stability and thermal performance suitable for surface-mount PCBs with moderate power dissipation requirements. Gate drive characteristics-including Qg = 6.4 nC, Qgd = 1.7 nC, and Ciss = 340 pF-support fast turn-on/turn-off with minimal driver loss.

Key Specifications

Parameter Value and Actual Design Meaning
VDS -60 V - Maximum drain-source blocking voltage for high-side switch applications requiring ≥60 V rail isolation.
RDS(on) typ. 0.13 Ω @ VGS = -10 V, ID = -5 A - Enables ≤0.65 W conduction loss at 10 A continuous current in thermally managed designs.
ID cont. -10 A @ TC = 25 °C - Supports sustained load currents up to 10 A when mounted on heatsinked PCBs.
EAS 80 mJ - Single-pulse avalanche energy rating ensures reliability under inductive switching transients without external snubbers.
Qg 6.4 nC - Low total gate charge reduces driver power consumption and enables use with low-current gate drivers (e.g., microcontroller GPIO).
Rthj-case 7.5 °C/W - Thermal resistance from junction to case allows ~4.7 W power dissipation before reaching 175 °C junction limit at 25 °C case temperature.
tr/tf 5.3 ns / 3.7 ns - Fast switching transitions minimize overlap losses in PWM-based power stages operating up to 500 kHz.

Pinout & Package

STU10P6F6 is housed in an IPAK (TO-251) package with three leads: Drain (Tab), Source (Pin 1), and Gate (Pin 2). The metal tab is electrically connected to the Drain terminal and serves as the primary thermal path to the PCB copper pour.

Pin/Terminal Circuit Role Design Meaning
Tab (Drain) Main current-carrying terminal (high-side switch node) Electrically tied to internal drain region; requires isolation from heatsink unless referenced to system ground; primary thermal interface.
Pin 1 Source Reference node for gate drive; connects to system ground or load return in high-side configuration; carries full load current.
Pin 2 Gate Control input; driven negative relative to source to turn on; threshold range -2 V to -4 V ensures compatibility with standard logic-level gate drivers.

Key Features

Feature Design Value
Very low RDS(on) 0.13 Ω typ. at -10 V VGS enables <1 W conduction loss at 9 A, reducing thermal design burden in compact power modules.
Low gate charge 6.4 nC total gate charge minimizes switching energy loss and supports direct MCU GPIO driving with RC gate networks.
High avalanche ruggedness 80 mJ single-pulse EAS eliminates need for external clamping diodes in relay/snubberless inductive load switching.
Extended junction temperature 175 °C max Tj rating permits operation in automotive under-hood and industrial ambient environments up to 125 °C with proper derating.
ECOPACK® compliant Meets RoHS and halogen-free requirements per ST's environmental compliance program for industrial and automotive supply chains.

Applications

Automotive Body Control Module (BCM) Industrial PLC Output Stage

Use Scenario: High-side power switch for 12 V/24 V solenoid, lamp, and heater control in vehicle body electronics.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side load switch with integrated gate pull-up and transient protection.

Use Value: -60 V VDS withstands load-dump transients up to +40 V; 80 mJ EAS handles inductive kickback from 2 A solenoids without failure.

Use Scenario: Solid-state output stage replacing electromechanical relays in programmable logic controller (PLC) digital outputs.

IC Role / Device Role / Timing Role: High-reliability P-channel switch controlling 24 V DC loads with fast response and zero contact wear.

Use Value: 5.3 ns rise time enables precise timing control of 100 Hz–1 kHz pulsed loads; 7.5 °C/W Rthj-case supports 10 A peak current in DIN-rail mounted enclosures.

Server PSU OR-ing Circuit Smart Home Power Distribution Unit

Use Scenario: Reverse-polarity protection and hot-swap OR-ing in redundant 48 V server power supplies.

IC Role / Device Role / Timing Role: Back-to-back P-MOSFET pair (with second device) providing bidirectional blocking and low-loss forward conduction.

Use Value: 0.13 Ω RDS(on) limits forward voltage drop to <1.3 V at 10 A, reducing power loss and heat generation vs. Schottky diode solutions.

Use Scenario: Individual branch switching and overload protection in residential smart circuit breakers and energy monitors.

IC Role / Device Role / Timing Role: Digitally controlled high-side switch enabling remote on/off, current monitoring, and fault logging.

Use Value: -4 V VGS(th) max ensures reliable turn-on with 5 V microcontroller logic; Qg = 6.4 nC allows fast state changes during grid synchronization events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP10P6F6 Same die, TO-220 package; Rthj-case = 5 °C/W; higher thermal performance but through-hole mounting required. Better suited for heatsink-mounted, high-power discrete designs where board space allows leaded components. Select when thermal budget is tighter than 7.5 °C/W and through-hole assembly is acceptable.
STD10P6F6 Same die, DPAK (TO-252) package; Rthj-case = 4.29 °C/W; surface-mount compatible with higher thermal efficiency than IPAK. Ideal for automated SMT production lines needing optimal thermal performance in space-constrained DC-DC modules. Choose for highest thermal efficiency in SMT designs where footprint and reflow compatibility are critical.

Compared with STP10P6F6 (TO-220) and STD10P6F6 (DPAK), STU10P6F6 offers a balanced trade-off: IPAK provides better thermal performance than SO-8 equivalents while retaining surface-mount compatibility and lower profile than TO-220-making it optimal for mid-power industrial PCBs with mixed assembly constraints.

Availability

STU10P6F6 is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC output stages, server PSU OR-ing circuits, and smart home power distribution units requiring stable component supply across multi-year production cycles.

Supply support for STU10P6F6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MEMS, power, and microcontroller products for industrial, automotive, and consumer markets.

STU10P6F6 belongs to the STripFET™ F6 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial power conversion systems where low RDS(on), robust avalanche capability, and thermal resilience are critical.

FAQ

What is the maximum continuous drain current for STU10P6F6 at 100 °C case temperature?

The maximum continuous drain current (ID) for STU10P6F6 is -7.2 A at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the IPAK package; operation above this current requires active cooling or pulse-width reduction to maintain junction temperature ≤175 °C.

Does STU10P6F6 require a gate resistor for safe operation?

A gate resistor is recommended to control dV/dt and prevent oscillation during switching. Typical values range from 10 Ω to 100 Ω depending on drive strength and layout parasitics. The device's low Qg (6.4 nC) allows fast switching even with modest gate drive, but uncontrolled ringing can cause shoot-through or EMI issues without proper gate damping.

Can STU10P6F6 be used in linear mode (as a pass transistor)?

No-STU10P6F6 is not characterized or guaranteed for linear (ohmic) operation. Its Safe Operating Area (SOA) curve in Figure 2 shows limited capability for DC or long-pulse linear use. For constant-current regulation or analog pass applications, dedicated linear MOSFETs or bipolar transistors with SOA-rated operation should be selected instead.

Is the metal tab of STU10P6F6 electrically isolated from other pins?

No-the metal tab is internally connected to the Drain terminal. When mounted on a PCB, the tab must either be electrically isolated from the heatsink or tied to the same potential as the drain node. Insulating pads or shoulder washers are required if the heatsink is grounded or at a different potential.

STU10P6F6 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
DeepGATE™, STripFET™ VI
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
160mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
6.4 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
340 pF @ 48 V
FET Feature:
-
Power Dissipation (Max):
35W (Tc)
Operating Temperature:
175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-251 (IPAK)

STU10P6F6 FAQ

1.How can I place an order for STU10P6F6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STU10P6F6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STU10P6F6 reliable?

The price and inventory of STU10P6F6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STU10P6F6 is usually 5 days.

3.What payment methods are accepted for STU10P6F6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STU10P6F6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STU10P6F6?

STU10P6F6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STU10P6F6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STU10P6F6?

For technical support, including STU10P6F6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STU10P6F6 requirements.

6.How does Aetrix verify that STU10P6F6 is sourced from the original manufacturer or authorized distributors?

All STU10P6F6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STU10P6F6 meets industry standards.

7.What is the process for return or replacement of STU10P6F6?

All STU10P6F6 units undergo pre-shipment inspection (PSI). If there is an issue with STU10P6F6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STU10P6F6 part is unused and in its original packaging.

Return procedure for STU10P6F6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STU10P6F6 Tags

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