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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STU12N65M5

Name: STU12N65M5
Brand: STMicroelectronics
SKU: STU12N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STU12N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STU12N65M5.pdf

Description:: MOSFET N-CH 650V 8.5A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STU12N65M5 from STMicroelectronics is an N-channel 650 V, 390 mΩ typ. (430 mΩ max), 8.5 A MDmesh M5 Power MOSFET in TO-220FP package, optimized for high-efficiency switching power supplies and PFC stages where low conduction loss and fast switching are critical.

For engineers reviewing the STU12N65M5 datasheet, STU12N65M5 pinout, STU12N65M5 application, or STU12N65M5 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, 15 V/ns dv/dt capability, 150 mJ single-pulse avalanche energy, and thermal resistance of 5.00 °C/W (junction-to-case) - all confirmed in DS6117 Rev 6.

Technical Context

This device uses ST's MDmesh M5 vertical process combined with PowerMESH horizontal layout to achieve ultra-low R_DS(on) while maintaining 650 V breakdown voltage and robust avalanche ruggedness. Its 20 nC total gate charge and 2–8.3 nC Q_gd support high-frequency hard-switching up to several hundred kHz.

The integrated body diode exhibits 230 ns reverse recovery time (T_J = 25 °C) and 2.2 µC Q_rr, enabling use in continuous-conduction-mode (CCM) PFC without external SiC diode replacement in cost-sensitive designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V AC input rectified systems with ≥20% margin against line surges.
R_DS(on) max	430 mΩ @ V_GS = 10 V, I_D = 4.3 A - enables <1.8 W conduction loss at 8.5 A DC, critical for 100–300 W SMPS.
I_D (cont)	8.5 A @ T_C = 25 °C - defines maximum continuous current under ideal heatsinking conditions.
E_AS	150 mJ - ensures reliable unclamped inductive switching in flyback or LLC resonant converters without snubber.
Q_g	20 nC - determines gate driver power requirement and switching transition time in hard-switched topologies.
dv/dt rating	15 V/ns - validates immunity to false turn-on during high-speed voltage transients in bridge configurations.
R_thJC	5.00 °C/W - allows direct thermal interface to heatsink; enables 25 W dissipation before reaching 150 °C junction limit.

Pinout & Package

STU12N65M5 is housed in a TO-220FP (Full-Pak) package with insulated tab, enabling direct mounting to heatsink without isolation hardware. The plastic body provides creepage/clearance compliance for industrial mains-connected applications.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain	Electrically connected to metal tab - must be isolated from chassis unless system ground reference permits.
G (Pin 1)	Gate	High-impedance control terminal; requires ≤±25 V gate-source voltage and low-inductance routing to minimize ringing.
S (Pin 3)	Source	Power return path and gate reference node; layout must minimize source inductance to preserve switching speed.

Key Features

Feature	Design Value
MDmesh M5 process technology	Delivers 390 mΩ typ. R_DS(on) at 650 V - 25% lower than prior-generation MDmesh devices at same voltage class.
100% avalanche tested	Guarantees single-pulse E_AS ≥150 mJ - eliminates need for design margining against inductive energy spikes.
Low Q_gd/Q_g ratio	8.3/20 = 0.415 - improves Miller immunity and reduces risk of shoot-through in half-bridge configurations.
Enhanced diode softness	Q_rr = 2.2 µC, t_rr = 230 ns - limits voltage overshoot and EMI generation during diode commutation in CCM PFC.

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switch in 200–300 W offline flyback or forward converter with universal AC input (85–265 VAC).

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via PWM duty cycle; operates at 65–130 kHz.

Use Value: 430 mΩ R_DS(on) reduces conduction loss by ~1.2 W vs. legacy 600 V MOSFETs, improving full-load efficiency by 0.8–1.1%.

Use Scenario: Active clamp forward or LLC resonant converter in 1U server PSU delivering 12 V/20 A output.

IC Role / Device Role / Timing Role: Main switching FET in primary half-bridge; handles 400 V DC bus with ZVS-assisted transitions.

Use Value: 20 nC Q_g and 5.00 °C/W R_thJC enable stable operation at 250 kHz with <95 °C junction temperature under full load.

AC-DC Power Factor Correction

Motor Drive Inverters (Fan/Pump)

Use Scenario: Boost switch in continuous-conduction-mode (CCM) PFC stage for LED drivers and industrial HMIs.

IC Role / Device Role / Timing Role: Fast-switching boost transistor synchronized to line frequency; conducts 8.5 A peak current.

Use Value: 230 ns t_rr and 2.2 µC Q_rr reduce diode recovery losses by 35% vs. standard 650 V FETs, lowering heatsink size by 30%.

Use Scenario: Low-side switch in 3-phase inverter driving 1–2 kW BLDC fans or HVAC blowers from 380 V DC bus.

IC Role / Device Role / Timing Role: Ground-referenced power switch controlled by isolated gate driver; switches at ≤20 kHz.

Use Value: 150 mJ E_AS withstands motor phase short-circuits without failure, eliminating need for external overcurrent protection circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 650 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12N65M5	Same die, TO-220 (non-insulated tab); R_thJC = 1.79 °C/W but requires insulating pad for heatsink mounting.	Better thermal performance in open-frame designs with isolated heatsinks; higher assembly cost due to insulation requirements.	Select when thermal budget is tighter and mechanical isolation can be guaranteed.
IPP65R190C7	Infineon CoolMOS C7; 190 mΩ typ. R_DS(on), 650 V, but higher Q_g (34 nC) and no avalanche rating.	Superior conduction efficiency below 5 A; unsuitable for unclamped inductive loads or surge-prone environments.	Select only for high-frequency, low-current SMPS where avalanche ruggedness is not required.

Compared with STP12N65M5, STU12N65M5 trades 3.21 °C/W higher junction-to-case thermal resistance for simplified heatsink integration; compared with IPP65R190C7, it sacrifices 240 mΩ higher R_DS(on) to guarantee 150 mJ avalanche robustness and lower EMI diode recovery.

Availability

STU12N65M5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, telecom rectifiers, and AC-DC power factor correction circuits requiring stable component supply and long-term manufacturability.

Supply support for STU12N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STU12N65M5 belongs to the MDmesh M5 Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching applications including server PSUs, industrial SMPS, and PFC stages where ruggedness and low R_DS(on) are jointly critical.

FAQ

What is the maximum continuous drain current for STU12N65M5 at 100 °C case temperature?

The maximum continuous drain current is 5.4 A at T_C = 100 °C, as specified in Table 1 of DS6117 Rev 6. This derating reflects thermal limitations of the TO-220FP package and ensures junction temperature remains ≤150 °C under steady-state operation with appropriate heatsinking.

Does STU12N65M5 have an insulated tab, and what is its insulation voltage rating?

Yes, STU12N65M5 uses the TO-220FP package with fully insulated tab. Its insulation withstand voltage is 2.5 kV RMS (1 s, T_C = 25 °C) from all three leads to external heatsink, per Table 1 in the datasheet - enabling direct mounting without thermal pads in Class I safety designs.

How does the body diode performance compare between STU12N65M5 and standard 650 V MOSFETs?

STU12N65M5 features enhanced body diode softness: t_rr = 230 ns and Q_rr = 2.2 µC at T_J = 25 °C, significantly lower than typical 650 V FETs (t_rr > 350 ns, Q_rr > 4 µC). This reduces voltage overshoot and EMI during diode commutation in PFC and flyback topologies.

Is STU12N65M5 suitable for zero-voltage switching (ZVS) applications?

Yes - its 20 nC Q_g, low C_oss (22 pF typ.), and 8.3 nC Q_gd support reliable ZVS in LLC resonant converters operating up to 500 kHz. The 15 V/ns dv/dt rating and 150 mJ E_AS further ensure robustness during resonant transitions and fault events.

STU12N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 8.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 430mOhm @ 4.3A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 900 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251 (IPAK)

STU12N65M5 FAQ

1.How can I place an order for STU12N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STU12N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STU12N65M5 reliable?

The price and inventory of STU12N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STU12N65M5 is usually 5 days.

3.What payment methods are accepted for STU12N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STU12N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STU12N65M5?

STU12N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STU12N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STU12N65M5?

For technical support, including STU12N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STU12N65M5 requirements.

6.How does Aetrix verify that STU12N65M5 is sourced from the original manufacturer or authorized distributors?

All STU12N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STU12N65M5 meets industry standards.

7.What is the process for return or replacement of STU12N65M5?

All STU12N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STU12N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STU12N65M5 part is unused and in its original packaging.

Return procedure for STU12N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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