STMicroelectronics STU150N3LLH6

Overview

STU150N3LLH6 from STMicroelectronics is an N-channel 30 V, 80 A Power MOSFET in IPAK (TO-251) package, featuring 0.0033 Ω max R_DS(on) at V_GS = 10 V and 40 A, high avalanche ruggedness (525 mJ E_AS), and low gate charge (Q_g = 40 nC). It serves as a high-efficiency main or synchronous rectifier switch in DC-DC converters for telecom power supplies.

For engineers reviewing the STU150N3LLH6 datasheet, STU150N3LLH6 pinout, STU150N3LLH6 application, or STU150N3LLH6 equivalent, key selection criteria include R_DS(on) vs. temperature stability, unclamped inductive switching capability, thermal resistance (R_thj-case = 1.36 °C/W), and IPAK package mounting compatibility with industrial PCB layouts.

Technical Context

This device implements ST's STripFET™ VI DeepGATE™ architecture, combining optimized cell pitch and gate trench geometry to minimize conduction and switching losses simultaneously. Its gate threshold voltage (V_GS(th) = 1–2.5 V) enables robust 4.5 V logic-level drive, while normalized R_DS(on) variation remains ≤1.6× across –50 °C to 175 °C junction temperature.

The integrated body diode exhibits fast reverse recovery (t_rr = 34 ns, Q_rr = 35 nC) and low forward voltage (V_SD = 1.1 V at I_SD = 40 A), supporting synchronous rectification without external Schottky replacement in 12 V input buck converters.

Key Specifications

Pinout & Package

STU150N3LLH6 uses the IPAK (TO-251) package: a 3-pin surface-mount variant of TO-220 with isolated drain tab, suitable for automated assembly and moderate-power thermal management. The package features a 16.1 mm height, 6.2 mm width, and 9.2 mm length, with lead-free ECOPACK® compliance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP150N3LLH6 and STD150N3LLH6, STU150N3LLH6 offers balanced thermal performance (1.36 °C/W) and SMT compatibility in IPAK-ideal for mid-density industrial PCBs needing both manufacturability and 80 A capability without TO-220 mechanical clearance.

Availability

STU150N3LLH6 is available at Aetrix Electronics and suitable for telecom power supplies, industrial motor controllers, synchronous rectifiers, and automotive body electronics requiring stable component supply and long-term production continuity.

Supply support for STU150N3LLH6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ VI Power MOSFET product line, engineered specifically for high-current, high-efficiency switching in 12–48 V power conversion systems where low R_DS(on), fast switching, and avalanche reliability are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

STU150N3LLH6 supports 80 A continuous drain current at T_C = 100 °C, per Table 2 Absolute Maximum Ratings. This reflects its robust wire-bond construction and thermal design-no derating required between 25 °C and 100 °C case temperature, simplifying thermal modeling for industrial applications.

Does this MOSFET require a gate resistor for safe operation?

Yes-a series gate resistor (typically 4.7–10 Ω) is required to dampen ringing and limit peak gate current during switching. The datasheet specifies switching times using R_G = 4.7 Ω (Table 6), and omitting it risks oscillation, shoot-through, and accelerated gate oxide wear due to the 40 nC Q_g and low input capacitance.

Can STU150N3LLH6 replace STP150N3LLH6 in an existing TO-220 footprint?

No-it uses IPAK (TO-251), which has different pad layout, lead spacing, and thermal pad configuration than TO-220. Direct replacement requires PCB redesign. However, identical electrical specs allow functional substitution if mechanical integration is addressed, including updated thermal vias and solder mask definition for the exposed drain tab.

Is the body diode suitable for reverse recovery in high-frequency circuits?

Yes-the body diode achieves t_rr = 34 ns and Q_rr = 35 nC under standard test conditions (I_SD = 80 A, di/dt = 100 A/µs), making it viable for synchronous rectification up to 1 MHz in well-designed layouts. Its soft recovery characteristic minimizes voltage overshoot and EMI compared to fast-recovery diodes.