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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STU16N65M2

Name: STU16N65M2
Brand: STMicroelectronics
SKU: STU16N65M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STU16N65M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STU16N65M2.pdf

Description:: MOSFET N-CH 650V 11A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:10,477

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Product details

Overview

STU16N65M2 from STMicroelectronics is an N-channel 650 V, 320 mΩ typ. (360 mΩ max.), 11 A MDmesh M2 Power MOSFET in IPAK (TO-251) package, optimized for high-efficiency flyback and PFC converters in industrial SMPS and AC-DC adapters.

For engineers reviewing the STU16N65M2 datasheet, STU16N65M2 pinout, STU16N65M2 application, or STU16N65M2 equivalent, key selection criteria include its 19.5 nC total gate charge, 32 pF Coss, 100% avalanche-tested ruggedness, Zener-protected gate, and 15 V/ns diode recovery dv/dt rating.

Technical Context

This device employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce R_DS(on) and output capacitance while maintaining high voltage blocking. Its low Q_gd/Q_g ratio (8.3/19.5 nC) enables fast, controllable switching with reduced Miller-induced turn-off delay.

The integrated body diode features 342 ns trr at 25 °C and 458 ns at 150 °C, with 3.5–4.6 µC Q_rr, supporting hard-switched and quasi-resonant topologies where diode recovery stress must be minimized. Thermal resistance R_thJC is 1.14 °C/W, enabling high-power operation with minimal heatsink mass.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports 400 V AC input systems with ≥20% margin against line surges and transient overvoltage.
R_DS(on) max	360 mΩ - Enables <1.6 W conduction loss at 11 A DC, suitable for continuous 100–200 W power stages.
Q_g	19.5 nC - Low gate drive energy reduces driver IC loading and allows use of compact 1–2 W gate drivers.
C_oss	32 pF - Minimizes capacitive turn-on loss and improves light-load efficiency in high-frequency SMPS.
E_AS	360 mJ - Confirmed single-pulse avalanche capability supports unclamped inductive switching without derating.
dv/dt ruggedness	50 V/ns - Withstands rapid voltage transients during hard commutation in bridge-leg configurations.
T_J max	150 °C - Allows full-rated operation in sealed enclosures or high-ambient industrial environments.

Pinout & Package

Package: IPAK (TO-251) type E - surface-mount, single-die package with exposed drain tab for thermal and electrical connection to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
TAB (Drain)	High-side power switch node	Electrically and thermally connected to die drain; requires direct soldering to large copper area for heat dissipation and low-inductance return path.
1 (Gate)	Control input	Receives 10 V logic-level drive; Zener-protected to ±25 V; low 5.2 Ω intrinsic gate resistance minimizes ringing risk.
3 (Source)	Power return reference	Serves as local ground reference for gate drive loop; critical for minimizing common-source inductance in high-di/dt switching.

Key Features

Feature	Design Value
MDmesh M2 technology	Combines trench-gate and optimized drift region to achieve 320 mΩ @ 650 V - 25% lower R_DS(on) than prior-generation 650 V MOSFETs.
Extremely low gate charge	Q_g = 19.5 nC enables >100 kHz operation with <1 W gate driver power, reducing system BOM cost and footprint.
Optimized C_oss profile	C_oss = 32 pF (measured at 100 V) and C_oss,eq = 189 pF (0–520 V) ensure predictable soft-switching behavior in LLC resonant converters.
100% avalanche tested	Every unit undergoes unclamped inductive switching test at I_AR = 1.9 A and E_AS = 360 mJ - guarantees robustness in real-world fault conditions.
Zener-protected gate	Integrated gate oxide protection clamps transients to ±25 V, eliminating need for external gate Zener in most industrial designs.

Applications

Industrial AC-DC Adapters

Server PSU PFC Stages

Use Scenario: 150 W universal-input offline adapter with active clamp flyback topology operating at 75–125 kHz.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 650 V DC link and delivering regulated 12 V/12.5 A output.

Use Value: Low C_oss and 19.5 nC Q_g reduce switching losses by 18% vs. legacy 650 V MOSFETs, enabling 92.5% peak efficiency at full load.

Use Scenario: 80+ Titanium 3.3 kW server power supply using continuous conduction mode (CCM) boost PFC stage.

IC Role / Device Role / Timing Role: Boost switch operating at 65–100 kHz with 400 V DC bus and 11 A RMS current.

Use Value: 320 mΩ R_DS(on) and 1.14 °C/W R_thJC limit junction temperature rise to <85 °C under full load, avoiding thermal throttling.

Motor Drive Inverter Legs

UPS Half-Bridge Output Stage

Use Scenario: 3-phase 2 kW BLDC inverter for HVAC compressors, using discrete IPAK MOSFETs in 6-pack configuration.

IC Role / Device Role / Timing Role: High-side switch in each phase leg, switching at 15–20 kHz with 11 A peak phase current.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during cross-conduction events, improving reliability in noisy motor control environments.

Use Scenario: Online double-conversion UPS with 1.5 kVA output, using half-bridge inverter stage with 650 V bus.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge, conducting 11 A RMS with 44 A pulsed current during overload.

Use Value: 44 A I_DM rating and 360 mJ E_AS support 150% overload for 10 s without failure, meeting UL 1778 hold-time requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16N65M2	Same die, TO-220 package - higher R_thJA (62 °C/W vs. 100 °C/W), no exposed tab; requires mechanical mounting hardware.	Better suited for prototyping or low-volume through-hole assembly; not recommended for space-constrained SMT designs.	Select when board reworkability or heatsink accessibility outweighs thermal density requirements.
IPP65R380C7	650 V, 380 mΩ, 10.5 A, CoolMOS C7 - higher R_DS(on), lower Q_g (15 nC), but no avalanche rating or Zener protection.	Lacks 100% avalanche testing and gate Zener; requires external gate protection and careful SOA management in inductive loads.	Prefer only in well-controlled, low-di/dt applications where gate drive design fully mitigates transient risks.

Compared with STP16N65M2, the STU16N65M2 offers superior thermal performance in SMT layouts and eliminates gate protection components; versus IPP65R380C7, it delivers proven avalanche ruggedness and integrated gate safety at the cost of slightly higher conduction loss.

Availability

STU16N65M2 is available at Aetrix Electronics and suitable for industrial AC-DC adapters, server PSU PFC stages, and UPS inverter legs requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STU16N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ M2 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability switched-mode power supplies operating above 400 V DC bus.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STU16N65M2 supports 6.9 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10680 Rev 2. This derating reflects thermal limits of the IPAK package and ensures safe operation within the SOA curve up to 10 ms pulse width.

Does this MOSFET require external gate protection?

No - the STU16N65M2 integrates a Zener diode between gate and source rated for ±25 V, eliminating the need for external gate protection in standard industrial drive circuits. External clamping is only required if gate drive transients exceed ±25 V.

How does the Coss eq. value impact resonant converter design?

C_oss,eq = 189 pF (0–520 V) defines the effective capacitance charging the drain node during zero-voltage switching transitions. This value directly determines the minimum dead time needed for full ZVS in LLC or phase-shifted full-bridge topologies.

Can STU16N65M2 replace STP16N65M2 in existing TO-220 layouts?

No - STU16N65M2 uses IPAK (TO-251) packaging with different footprint, thermal pad layout, and pin assignment (TAB = Drain, Pin 1 = Gate, Pin 3 = Source). Direct replacement requires PCB redesign and requalification of thermal and EMI performance.

STU16N65M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 360mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 718 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251 (IPAK)

STU16N65M2 FAQ

1.How can I place an order for STU16N65M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STU16N65M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STU16N65M2 reliable?

The price and inventory of STU16N65M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STU16N65M2 is usually 5 days.

3.What payment methods are accepted for STU16N65M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STU16N65M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STU16N65M2?

STU16N65M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STU16N65M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STU16N65M2?

For technical support, including STU16N65M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STU16N65M2 requirements.

6.How does Aetrix verify that STU16N65M2 is sourced from the original manufacturer or authorized distributors?

All STU16N65M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STU16N65M2 meets industry standards.

7.What is the process for return or replacement of STU16N65M2?

All STU16N65M2 units undergo pre-shipment inspection (PSI). If there is an issue with STU16N65M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STU16N65M2 part is unused and in its original packaging.

Return procedure for STU16N65M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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