STMicroelectronics STU16N65M5

Overview

STU16N65M5 from STMicroelectronics is an N-channel 650 V, 0.230 Ω, 12 A MDmesh™ V Power MOSFET in TO-220FP package, designed for high-efficiency switching in offline SMPS, PFC stages, and industrial motor drives. It features 100% avalanche tested ruggedness, 15 V/ns dv/dt capability, and low gate charge (31 nC) enabling fast, reliable hard-switching operation.

For engineers reviewing the STU16N65M5 datasheet, STU16N65M5 pinout, STU16N65M5 application, or STU16N65M5 equivalent, key selection criteria include R_DS(on) at 10 V drive, safe operating area under 400 V inductive loads, thermal resistance (5 °C/W junction-to-case), and source-drain diode recovery performance (300 ns t_rr, 3.5 µC Q_rr) in bridge configurations.

Technical Context

This device employs ST's MDmesh™ V vertical silicon process combined with PowerMESH™ horizontal layout to achieve industry-leading R_DS(on) × area efficiency. Its 650 V V_DSS rating supports universal-input AC/DC designs up to 400 V DC bus, while the 150 °C max junction temperature enables high-power density layouts without derating.

The TO-220FP package integrates a full plastic body with isolated tab, delivering 2500 V RMS insulation between leads and heatsink - critical for reinforced isolation in Class II power supplies. Gate threshold voltage (3–5 V) ensures compatibility with standard 10 V gate drivers and robust noise immunity in noisy industrial environments.

Key Specifications

Pinout & Package

STU16N65M5 is housed in a TO-220FP (Full-Pak) package: insulated plastic case with electrically isolated metal tab, 3-pin single-ended configuration, and 2500 V RMS isolation rating between leads and heatsink surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP16N65M5, STU16N65M5 trades 2.6× higher thermal resistance for built-in isolation and simplified assembly; versus IPW65R027CFD7, it offers 35% lower gate drive loss and 20% faster switching at the cost of 44% higher R_DS(on), making it optimal for mid-power, high-frequency, safety-critical designs.

Availability

STU16N65M5 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, outdoor LED drivers, and solar microinverters requiring stable component supply across multi-year production cycles.

Supply support for STU16N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

The MDmesh™ V product line targets high-efficiency, high-reliability power conversion systems demanding best-in-class R_DS(on), rugged avalanche performance, and certified isolation - especially in space-constrained, safety-critical AC/DC and DC/DC applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STU16N65M5 supports 7.3 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the official datasheet (Doc ID 15210 Rev 4). This rating is limited by junction temperature (T_j ≤ 150 °C) and accounts for thermal derating in real-world heatsink conditions.

Does the TO-220FP package require an insulating pad when mounted to a grounded heatsink?

No - the TO-220FP package provides 2500 V RMS insulation between all three leads and the heatsink-mounting surface. The metal tab is electrically isolated, allowing direct mounting to grounded metal chassis without thermal pads, sil-pads, or mica washers.

How does the source-drain diode recovery performance compare to standard silicon MOSFETs?

At I_SD = 12 A and di/dt = 100 A/µs, STU16N65M5 achieves t_rr = 300 ns and Q_rr = 3.5 µC - approximately 40% lower Q_rr than typical 650 V planar MOSFETs. This reduces reverse recovery loss and EMI in bridge configurations, enabling cleaner hard-switching waveforms.

Can STU16N65M5 replace STP16N65M5 in an existing TO-220 footprint?

No - STU16N65M5 uses TO-220FP (full-pack) with different pin spacing and tab isolation geometry. While both share the same 3-pin linear layout, TO-220FP has longer leads, thicker plastic body, and recessed tab mounting holes. Mechanical redesign and solder stencil adjustment are required for replacement.