STMicroelectronics STU2LN60K3

Overview

STU2LN60K3 from STMicroelectronics is an N-channel 600 V, 4 Ω typ., 2 A SuperMESH3™ Power MOSFET in IPAK (TO-251) package, designed for high-voltage switching in offline AC-DC converters, LED drivers, and industrial power supplies. It features 100% avalanche testing, 12 V/ns dv/dt capability, 80 mJ single-pulse avalanche energy, and integrated gate-source Zener protection at 30 V.

For engineers reviewing the STU2LN60K3 datasheet, STU2LN60K3 pinout, STU2LN60K3 application, or STU2LN60K3 equivalent, key selection criteria include R_DS(on) stability over temperature, low C_oss (22 pF typ.), fast diode recovery (200 ns typ. at T_j = 25 °C), and thermal resistance of 2.78 °C/W (j-case).

Technical Context

This device employs ST's enhanced SuperMESH3™ vertical structure to achieve ultra-low on-resistance while maintaining robust 600 V blocking capability. Its optimized charge distribution yields low Q_g (12 nC typ.) and Q_gd (7.7 nC typ.), enabling efficient high-frequency switching up to several hundred kHz.

The integrated source-drain diode exhibits improved reverse recovery with t_rr = 200 ns and Q_rr = 800 nC at 25 °C - critical for reducing switching losses in hard-switched flyback and PFC stages. The built-in 30 V gate-source Zener eliminates need for external clamping in noisy gate-drive environments.

Key Specifications

Pinout & Package

STU2LN60K3 is housed in an IPAK (TO-251) surface-mount package with exposed drain tab for thermal and electrical connection. The package features three leads: Gate (G), Drain (D), and Source (S), with Drain connected internally to the metal tab for low-inductance, high-current return path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP2LN60K3 and FQP2N60, STU2LN60K3 offers superior thermal performance (2.78 °C/W vs. 6.25/62.5 °C/W), integrated gate protection, and 60% higher avalanche energy - making it optimal for space-constrained, high-reliability SMT power stages.

Availability

STU2LN60K3 is available at Aetrix Electronics and suitable for AC-DC adapters, LED drivers, industrial PLC outputs, and smart appliance control requiring stable component supply across production lifecycles.

Supply support for STU2LN60K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.

STU2LN60K3 belongs to the SuperMESH3™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600 V offline power conversion systems where thermal density and ruggedness are critical.

FAQ

What is the maximum continuous drain current for STU2LN60K3 at 100 °C case temperature?

The maximum continuous drain current is 1.26 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This value is limited by both R_DS(on) thermal derating and package power dissipation constraints, not by silicon capability alone.

Does STU2LN60K3 require an external gate resistor for safe operation?

A gate resistor is required for controlled turn-on/turn-off timing and to limit peak gate current, but no external Zener diode is needed - the integrated 30 V gate-source Zener provides sufficient protection against transients and ESD per HBM 2500 V rating.

Can STU2LN60K3 be used in synchronous rectification applications?

No - STU2LN60K3 is an N-channel high-side switch optimized for 600 V blocking and avalanche ruggedness, not for low-V_DS synchronous rectification. Its body diode recovery characteristics and R_DS(on) are not optimized for reverse-conduction efficiency in secondary-side roles.

What is the recommended PCB layout practice for the IPAK drain tab?

The exposed drain tab must be connected to a large, thermally robust copper pour (≥ 200 mm²) with ≥ 4 thermal vias (0.3 mm diameter, filled or plated) to an internal ground plane. Avoid routing signal traces under the tab to prevent coupling of high-dv/dt noise into sensitive nodes.