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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STU2N105K5

Name: STU2N105K5
Brand: STMicroelectronics
SKU: STU2N105K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STU2N105K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STU2N105K5.pdf

Description:: MOSFET N-CH 1050V 1.5A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:7,717

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Product details

Overview

STU2N105K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET using MDmesh K5 vertical structure technology, rated for 1050 V V_DS, 6 Ω typical R_DS(on), and 1.5 A continuous drain current at T_C = 25 °C. It features ultra-low gate charge (10 nC), Zener-protected gate, and 100% avalanche tested - deployed in high-efficiency flyback and resonant converters operating up to 840 V bus voltage.

For engineers reviewing the STU2N105K5 datasheet, STU2N105K5 pinout, STU2N105K5 application, or STU2N105K5 equivalent, key selection criteria include its 1050 V breakdown rating, 2.08 °C/W junction-to-case thermal resistance, 90 mJ single-pulse avalanche energy, and DPAK (TO-252) package suitability for medium-power SMPS designs with constrained board space.

Technical Context

This device implements ST's MDmesh K5 proprietary vertical superjunction architecture to minimize conduction and switching losses simultaneously. Its 115 pF input capacitance and 0.5 pF reverse transfer capacitance enable fast, controlled switching under high dv/dt conditions up to 50 V/ns.

The integrated source-drain diode exhibits 326 ns reverse recovery time and 1.19 µC Q_rr at 25 °C, supporting quasi-resonant and ZVS topologies. The Zener-protected gate withstands ±30 V transient stress, and the 1050 V V_(BR)DSS is guaranteed at I_D = 1 mA with 3–5 V gate threshold.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1050 V - supports primary-side switching in offline SMPS up to 840 V DC bus with margin
R_DS(on) max	8 Ω - ensures <1.2 W conduction loss at 1.5 A, critical for thermal management in DPAK
Q_g	10 nC - enables efficient gate drive with low-power controllers and reduces switching loss
E_AS	90 mJ - guarantees ruggedness against unclamped inductive switching events in flyback converters
R_thJC	2.08 °C/W - allows 28.8 W dissipation before reaching 150 °C junction limit at 25 °C case
dv/dt ruggedness	50 V/ns - prevents spurious turn-on during high-speed voltage transients in hard-switched PFC stages
V_GS(th)	3–5 V - compatible with standard 10 V gate drivers and provides noise immunity above 2 V supply ripple

Pinout & Package

DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; thermally enhanced plastic surface-mount outline per JEDEC TO-252-2 variant.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring ≤10 V drive; Zener-clamped to ±30 V for ESD robustness
2 (TAB/D)	Drain (exposed tab)	Main high-voltage power path; electrically and thermally connected to PCB copper pour
3 (S)	Source	Reference node for gate drive and current sensing; tied to power ground in low-side configurations

Key Features

Feature	Design Value
MDmesh K5 vertical structure	Reduces R_DS(on) × Q_g FoM by >40% vs. prior-generation 1000 V MOSFETs, enabling higher power density
100% avalanche tested	Each unit validated for 0.5 A repetitive avalanche current and 90 mJ single-pulse energy at T_J = 25 °C
Zener-protected gate	Integrated gate-body Zener clamps transients to ±30 V, eliminating need for external gate protection components
Low C_oss & C_rss	15 pF output capacitance and 0.5 pF reverse transfer capacitance minimize Miller effect and improve switching controllability
High dv/dt ruggedness	Rated for 50 V/ns MOSFET dv/dt without false triggering - essential for reliable operation in high-frequency resonant converters

Applications

Industrial Flyback Converters

AC-DC Adapters (≥30 W)

Use Scenario: Primary-side switch in universal-input (85–265 V_AC) flyback converters delivering 36–48 V output at up to 1.5 A.

IC Role / Device Role: High-voltage power switch handling 840 V reflected transients and sustaining 1050 V blocking capability.

Use Value: 90 mJ E_AS and 50 V/ns dv/dt rating prevent failure during output short-circuit or startup surge events.

Use Scenario: Compact wall-plug adapters for PoE injectors and IoT gateways requiring <15 mm height and >85% efficiency.

IC Role / Device Role: Main switching element in QR flyback topology operating at 65–130 kHz with valley switching.

Use Value: Ultra-low Q_g (10 nC) reduces gate driver loss and enables use of low-cost SOT-23 controllers.

LED Driver Power Supplies

Smart Meter Power Stages

Use Scenario: Constant-current LED drivers for street lighting (72–120 W) with active PFC front-end and flyback secondary.

IC Role / Device Role: Isolated high-side switch in auxiliary supply stage powering MCU and communication ICs.

Use Value: 1050 V V_(BR)DSS accommodates line surges up to 4 kV (IEC 61000-4-5) without derating.

Use Scenario: Auxiliary power converter in three-phase smart meters, deriving 5 V/3.3 V from 230 V_AC mains with reinforced isolation.

IC Role / Device Role: Primary switch in capacitor-fed or flyback-derived auxiliary supply meeting IEC 62053-21 creepage requirements.

Use Value: DPAK package enables ≥8 mm creepage on FR-4 PCB, satisfying CTI ≥600 material requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP2N105K5	TO-220 package; identical electrical specs but 3× higher R_thJA (50 °C/W vs. 2.08 °C/W junction-to-case)	Suitable for lower-power (<15 W), forced-air-cooled designs where heatsink mounting is feasible	Select when mechanical mounting to heatsink is preferred over PCB thermal pads and board space is unconstrained
STW20NK100Z	1000 V rating, 0.55 Ω R_DS(on), 20 A ID - larger die, higher current, but 3× higher Q_g (32 nC) and no Zener gate protection	Targeted at high-current PFC boost stages, not flyback primary switches	Choose only for high-current, low-frequency (≤100 kHz) applications where gate drive strength outweighs avalanche robustness needs

Compared with STP2N105K5 and STW20NK100Z, STU2N105K5 uniquely balances 1050 V capability, DPAK thermal performance, and gate-protected ruggedness - making it optimal for space-constrained, medium-power flyback and auxiliary supplies where reliability under transient stress is non-negotiable.

Availability

STU2N105K5 is available at Aetrix Electronics and suitable for industrial flyback converters, AC-DC adapters, and smart meter auxiliary power supplies requiring stable component supply across multi-year production cycles.

Supply support for STU2N105K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STU2N105K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, compact offline SMPS and auxiliary power supplies demanding 1000 V+ blocking capability and superior FoM.

FAQ

What is the maximum recommended gate drive voltage for STU2N105K5?

The absolute maximum gate-source voltage is ±30 V, but ST specifies 10 V as the nominal drive level for full R_DS(on) characterization. Operating between 8 V and 12 V ensures robust turn-on while staying within the Zener clamp range. Exceeding 15 V offers negligible R_DS(on) improvement but increases gate oxide stress risk.

Can STU2N105K5 replace STD2N105K5 in existing designs?

Yes - STU2N105K5 and STD2N105K5 share identical electrical specifications, thermal ratings, and DPAK package dimensions. The 'U' suffix denotes tape-and-reel packaging per EIA-481-D standard, while 'D' indicates tube packaging; both use the same die and assembly process.

Does STU2N105K5 include an integrated body diode, and what are its recovery characteristics?

Yes, it features a monolithic source-drain diode with 326 ns reverse recovery time (T_J = 25 °C) and 1.19 µC Q_rr. At 150 °C, trr increases to 525 ns and Q_rr rises to 1.83 µC. These values are measured under standardized 100 A/µs di/dt and 60 V V_DD conditions per Figure 16 in DS10323.

Is STU2N105K5 compliant with RoHS and REACH regulations?

Yes - STU2N105K5 is manufactured in ST's ECOPACK2-compliant DPAK (TO-252) package, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Full compliance documentation, including substance declarations and test reports, is available via ST's Quality & Reliability portal.

STU2N105K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ K5

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 1050 V

Current - Continuous Drain (Id) @ 25°C:: 1.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8Ohm @ 750mA, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 115 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251 (IPAK)

STU2N105K5 FAQ

1.How can I place an order for STU2N105K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STU2N105K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STU2N105K5 reliable?

The price and inventory of STU2N105K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STU2N105K5 is usually 5 days.

3.What payment methods are accepted for STU2N105K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STU2N105K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STU2N105K5?

STU2N105K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STU2N105K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STU2N105K5?

For technical support, including STU2N105K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STU2N105K5 requirements.

6.How does Aetrix verify that STU2N105K5 is sourced from the original manufacturer or authorized distributors?

All STU2N105K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STU2N105K5 meets industry standards.

7.What is the process for return or replacement of STU2N105K5?

All STU2N105K5 units undergo pre-shipment inspection (PSI). If there is an issue with STU2N105K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STU2N105K5 part is unused and in its original packaging.

Return procedure for STU2N105K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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