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STMicroelectronics STU2N62K3

Part No.:
STU2N62K3
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixSTU2N62K3.pdf
Description:
MOSFET N-CH 620V 2.2A IPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,714

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Product details

Overview

STU2N62K3 from STMicroelectronics is an N-channel 620 V, 2.9 Ω typ. (3.6 Ω max), 2.2 A MDmesh™ K3 Power MOSFET in IPAK (TO-251) package, featuring 100% avalanche tested operation, 12 V/ns dv/dt capability, and integrated Zener-protected gate, designed for high-efficiency flyback and resonant SMPS primary-side switching.

For engineers reviewing the STU2N62K3 datasheet, STU2N62K3 pinout, STU2N62K3 application, or STU2N62K3 equivalent, this device supports critical design decisions in offline AC-DC converters, industrial power supplies, and LED drivers where high-voltage ruggedness, low conduction loss, and fast diode recovery are required.

Technical Context

This MOSFET employs ST's optimized vertical MDmesh™ K3 structure to achieve ultra-low RDS(on) while maintaining high breakdown voltage and superior dynamic performance. Its built-in Zener-protected gate enables robust ESD immunity without external clamping components.

The device delivers 85 mJ single-pulse avalanche energy at Tj = 25 °C and exhibits 200 ns reverse recovery time (Tj = 25 °C) with 0.9 µC Qrr, enabling reliable operation under hard-switched inductive loads and unclamped inductive switching conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 620 V - Withstands full mains rectified voltage in universal-input 85–265 VAC SMPS designs
RDS(on) max 3.6 Ω - Limits conduction loss to ≤8.7 W at ID = 2.2 A, enabling thermally constrained PCB layouts
ID continuous 2.2 A at TC = 25 °C - Supports up to 100 W output in compact flyback topologies with adequate heatsinking
EAS 85 mJ - Enables robust unclamped inductive switching without external snubbers in PFC or LLC stages
dv/dt capability 12 V/ns - Prevents spurious turn-on during high-speed switching in high-noise industrial environments
Qg 15 nC - Reduces gate drive power requirement and allows use of low-cost bipolar or CMOS gate drivers
VGS(th) 3.0–4.5 V - Ensures clean turn-on with standard 5 V or 3.3 V logic-level controllers
Tj range −55 to +150 °C - Qualified for extended temperature operation in enclosed industrial power modules

Pinout & Package

STU2N62K3 uses the IPAK (TO-251) package with three terminals: Drain (D) connected to the exposed tab (pin 2/TAB), Gate (G) on pin 1, and Source (S) on pin 3. The tab is electrically connected to the Drain and serves as the primary thermal path to the PCB copper pour.

Pin/Terminal Circuit Role Design Meaning
G (Pin 1) Gate control input Accepts 0–10 V logic-level signals; Zener-protected to ±30 V for ESD resilience
D (Tab/Pin 2) Drain current path & thermal interface Exposed metal tab is Drain-connected; requires insulated mounting or direct thermal pad to heatsink
S (Pin 3) Source reference node Provides return path for load current and gate drive loop; defines local ground reference for driver IC

Key Features

Feature Design Value
100% avalanche tested Guarantees minimum 85 mJ single-pulse energy handling across production lot-no derating needed for transient overloads
Extremely high dv/dt capability 12 V/ns rating prevents false triggering in noisy high-frequency SMPS layouts without added gate resistors or RC networks
Very low intrinsic capacitance Ciss = 340 pF and Crss = 4 pF reduce switching losses and improve efficiency above 100 kHz in resonant converters
Zener-protected gate ±30 V gate-source Zener clamps transients, eliminating need for external TVS diodes in cost-sensitive consumer power supplies
Improved diode reverse recovery 200 ns trr and 0.9 µC Qrr minimize switching spikes and EMI in discontinuous conduction mode (DCM) flyback designs

Applications

AC-DC Adapter Industrial SMPS

Use Scenario: 65 W universal-input adapter for laptops and monitors operating in DCM flyback topology.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch synchronizing with PWM controller; handles 400 V DC bus and 2.2 A peak drain current.

Use Value: Low RDS(on) reduces conduction loss by 18% vs. legacy 5 Ω MOSFETs, improving no-load efficiency to meet DOE VI standards.

Use Scenario: 120 W open-frame industrial power supply with active PFC front-end and LLC resonant secondary stage.

IC Role / Device Role / Timing Role: PFC boost switch operating at 65 kHz with 620 V blocking requirement and repetitive avalanche stress.

Use Value: 12 V/ns dv/dt rating eliminates false turn-on during line surges, reducing system-level failure rate in factory automation equipment.

LED Driver UPS Inverter Stage

Use Scenario: Constant-current 150 W outdoor LED streetlight driver with surge immunity to 4 kV line transients.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback; absorbs repetitive avalanche energy during lightning-induced surges.

Use Value: 85 mJ EAS withstands 100+ surge events without degradation, extending field lifetime beyond 50,000 hours.

Use Scenario: 1 kVA online UPS inverter half-bridge stage converting 380 V DC bus to 230 V AC output.

IC Role / Device Role / Timing Role: High-side switch in 16 kHz hard-switched H-bridge; subjected to high di/dt and cross-conduction risks.

Use Value: Fast 200 ns trr and low Qrr suppress shoot-through current spikes, reducing MOSFET junction temperature rise by 12 °C at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP2N62K3 TO-220 package, RDS(on) max = 3.6 Ω, same die but higher Rthj-case (6.25 °C/W vs. 2.78 °C/W) Requires bolted heatsink; unsuitable for space-constrained SMT-only designs Select when mechanical mounting flexibility outweighs PCB area constraints and thermal performance is secondary
FQP2N62 620 V, RDS(on) max = 5.5 Ω, no Zener protection, lower EAS (45 mJ), TO-220FP package Lacks avalanche ruggedness and gate protection; not rated for repetitive surge conditions Only acceptable in cost-driven, non-safety-critical applications with strict BOM cost targets and controlled lab environments

Compared with STP2N62K3, STU2N62K3 offers 55% lower thermal resistance and surface-mount compatibility; versus FQP2N62, it provides 89% higher avalanche energy and integrated gate protection-critical for field-reliable industrial power conversion.

Availability

STU2N62K3 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, and LED drivers requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for STU2N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STU2N62K3 belongs to the MDmesh™ K3 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in space- and thermal-constrained applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STU2N62K3 supports 1 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS7248 Rev 3. This derating reflects thermal limits of the IPAK package and ensures safe operation within its 2.78 °C/W junction-to-case thermal resistance.

Does STU2N62K3 require an external gate resistor for stability?

No external gate resistor is mandatory due to its 12 V/ns dv/dt capability and Zener-protected gate, but a 10–22 Ω series resistor is recommended to dampen ringing in high-di/dt layouts and align with Figure 16 test circuit guidelines in DS7248.

Can STU2N62K3 replace STD2N62K3 in a DPAK-based design?

No direct replacement is possible without PCB redesign: STU2N62K3 uses IPAK (TO-251) with different footprint, thermal pad layout, and lead pitch than DPAK (TO-252). Mechanical data in Tables 14 and 9 confirm incompatible land patterns and mounting dimensions.

What is the significance of the "K3" suffix in the part number?

The "K3" denotes ST's third-generation MDmesh™ technology, characterized by improved cell density, reduced specific on-resistance, enhanced avalanche ruggedness, and optimized capacitance profile-distinct from earlier K1 and K2 variants per ST's MDmesh™ roadmap documentation.

STU2N62K3 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
SuperMESH3™
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
620 V
Current - Continuous Drain (Id) @ 25°C:
2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.6Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
340 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
45W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-251 (IPAK)

STU2N62K3 FAQ

1.How can I place an order for STU2N62K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STU2N62K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STU2N62K3 reliable?

The price and inventory of STU2N62K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STU2N62K3 is usually 5 days.

3.What payment methods are accepted for STU2N62K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STU2N62K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STU2N62K3?

STU2N62K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STU2N62K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STU2N62K3?

For technical support, including STU2N62K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STU2N62K3 requirements.

6.How does Aetrix verify that STU2N62K3 is sourced from the original manufacturer or authorized distributors?

All STU2N62K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STU2N62K3 meets industry standards.

7.What is the process for return or replacement of STU2N62K3?

All STU2N62K3 units undergo pre-shipment inspection (PSI). If there is an issue with STU2N62K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STU2N62K3 part is unused and in its original packaging.

Return procedure for STU2N62K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STU2N62K3 Tags

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