STMicroelectronics STU2N80K5

Overview

STU2N80K5 from STMicroelectronics is an N-channel 800 V, 4.5 Ω (max) MDmesh K5 Power MOSFET in IPAK (TO-251 type C) package, rated for 2 A continuous drain current at 25 °C and 1.3 A at 100 °C, with 5 nC total gate charge and 100% avalanche tested for ruggedness in high-voltage switching power supplies.

For engineers reviewing the STU2N80K5 datasheet, STU2N80K5 pinout, STU2N80K5 application, or STU2N80K5 equivalent, this device is selected for high-efficiency flyback, PFC, and resonant converters where low R_DS(on) × area, ultra-low Q_g, and dv/dt ruggedness (50 V/ns) are critical to thermal management and EMI control.

Technical Context

This MOSFET employs ST's proprietary MDmesh K5 vertical structure to achieve industry-leading figure of merit (R_DS(on) × Q_g) and ultra-low output capacitance (C_oss = 8 pF typ.), enabling high-frequency operation above 100 kHz without excessive switching losses. Its Zener-protected gate ensures robustness against overvoltage transients during layout or drive faults.

The device features a fully rated 800 V V_(BR)DSS, 60.5 mJ single-pulse avalanche energy (E_AS), and 4.5 V/ns diode recovery dv/dt capability - all validated under standardized test conditions per DS9820 Rev 4. Thermal resistance is 2.78 °C/W junction-to-case, supporting high-power density designs with minimal heatsinking.

Key Specifications

Pinout & Package

IPAK (TO-251 type C) package with exposed drain tab for thermal and electrical connection; compact 6.1 mm × 6.6 mm footprint optimized for high-voltage isolation and PCB space efficiency.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Compared with STP2N80K5, STU2N80K5 offers superior board-level integration via IPAK's surface-mount form factor and lower profile, while FQP2N80 trades measurable performance degradation (33% higher R_DS(on), 140% higher Q_g) for broad distributor availability - making STU2N80K5 optimal for new high-density, high-reliability designs.

Availability

STU2N80K5 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, LED driver systems, and telecom rectifiers requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for STU2N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion - targeting flyback, PFC, and resonant topologies operating at 65–300 kHz.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STU2N80K5 supports 1.3 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9820 Rev 4. This derating reflects thermal limits of the IPAK package and ensures safe operation within its SOA boundary at elevated temperatures without exceeding 150 °C junction temperature.

Does the device include integrated gate protection?

Yes - the STU2N80K5 integrates a bidirectional Zener diode between gate and source, clamping V_GS to ±30 V. This eliminates the need for external gate protection components in standard drive configurations and enhances reliability during layout-induced transients or driver faults.

Can STU2N80K5 replace STP2N80K5 in existing designs?

Yes, with PCB layout revision: both share identical electrical specs and die, but STU2N80K5 uses IPAK (surface-mount) versus STP2N80K5's TO-220 (through-hole). The pinout differs (G-D-S vs G-D-S with tab), and thermal interface must be adapted for soldered tab mounting instead of screw-down heatsink attachment.

What is the typical reverse recovery charge (Q_rr) of the body diode?

The body diode Q_rr is 1.0 µC at T_J = 25 °C and 1.45 µC at T_J = 150 °C, measured under ISD = 2 A, di/dt = 100 A/µs, and V_DD = 60 V (Table 7, DS9820 Rev 4). This low value supports efficient operation in synchronous rectification and quasi-resonant topologies.