STMicroelectronics STU2N95K5

Overview

STU2N95K5 from STMicroelectronics is a very high voltage N-channel Power MOSFET based on MDmesh K5 vertical structure technology, delivering 950 V V_DS, 4.2 Ω typ. R_DS(on) at V_GS = 10 V and 2 A continuous drain current at T_C = 25 °C. It features ultra-low gate charge (10 nC), 100% avalanche tested capability (E_AS = 50 mJ), and Zener-protected gate for robustness in high-voltage switching applications such as AC-DC front-end PFC stages.

For engineers reviewing the STU2N95K5 datasheet, STU2N95K5 pinout, STU2N95K5 application, or STU2N95K5 equivalent, key selection criteria include its 950 V breakdown rating, low 2.78 °C/W junction-to-case thermal resistance, industry-leading R_DS(on) × area figure of merit, and validated dv/dt ruggedness up to 50 V/ns - critical for reliable operation in high-frequency, high-voltage converters.

Technical Context

This device implements ST's MDmesh K5 proprietary vertical superjunction architecture, enabling dramatic reduction in specific on-resistance while maintaining high voltage blocking. Its optimized cell layout yields ultra-low C_iss (105 pF) and Crss (0.5 pF), supporting fast switching with minimal Miller effect.

The integrated Zener-protected gate ensures ±30 V V_GS tolerance and eliminates need for external gate clamping in demanding industrial power supplies. Avalanche ruggedness (I_AR = 1 A, E_AS = 50 mJ) and 4.5 V/ns diode recovery dv/dt rating confirm suitability for unclamped inductive switching and hard-commutation topologies.

Key Specifications

Pinout & Package

STU2N95K5 is housed in an IPAK (TO-251 type C) package with exposed drain tab for thermal and electrical connection. The package provides mechanical compatibility with TO-251 footprints and enhanced thermal performance versus standard DPAK.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP2N95K5 and IXTH2N90P, STU2N95K5 offers superior power density (IPAK footprint), best-in-class FoM for 950 V class, and built-in gate protection - making it optimal for compact, high-reliability industrial and EV charging PFC stages where thermal and layout constraints are critical.

Availability

STU2N95K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom rectifier modules, and EV charging station front-end converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for STU2N95K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STU2N95K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-density switched-mode power supplies operating at 600–1000 V DC bus levels.

FAQ

What is the maximum safe operating temperature for STU2N95K5?

The STU2N95K5 has a specified operating junction temperature range up to 150 °C. Its R_thJC of 2.78 °C/W and 45 W total power dissipation at T_C = 25 °C allow sustained operation at T_J = 150 °C when mounted on a properly sized heatsink with ≤ 20 °C/W system thermal resistance. Derating curves in Figure 1 confirm usable current down to 1.3 A at T_C = 100 °C.

Does STU2N95K5 require external gate protection?

No - STU2N95K5 integrates a bidirectional Zener diode between gate and source, rated for ±30 V, eliminating the need for external gate clamping components. This protection is validated per datasheet Table "Gate-source Zener diode" (removed in Rev 2 but retained in device design), and confirmed by guaranteed V_GS = ±30 V absolute maximum rating and 100% production test screening.

Can STU2N95K5 replace STP2N95K5 in existing designs?

Yes, with mechanical and thermal validation: both share identical die characteristics (V_DS, R_DS(on), Q_g, E_AS), but STU2N95K5 uses IPAK (TO-251) while STP2N95K5 uses TO-220FP. Pinout differs (IPAK: G-S-D tab; TO-220FP: G-D-S), and thermal interface requirements differ - IPAK requires insulated mounting due to conductive tab, whereas TO-220FP uses isolated mounting hole.

What is the typical reverse recovery behavior of the body diode?

The STU2N95K5 body diode exhibits t_rr = 300 ns and Q_rr = 1.15 µC at T_J = 25 °C, ISD = 2 A, di/dt = 100 A/µs, and V_DD = 60 V. At elevated temperature (T_J = 150 °C), t_rr increases to 525 ns and Q_rr to 1.90 µC. These values are measured per Figure 15 test circuit and support use in quasi-resonant topologies where controlled soft recovery is required.