STMicroelectronics STU3LN80K5
- Part No.:
- STU3LN80K5
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
STU3LN80K5.pdf
- Description:
- MOSFET N-CHANNEL 800V 2A IPAK
- Quantity:
- Payment:

- Shipping:

Inventory:2,997
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Product details
Overview
STU3LN80K5 from STMicroelectronics is an N-channel 800 V, 2.5 A high-voltage Power MOSFET in IPAK (TO-251) package, fabricated with MDmesh K5 vertical structure technology. It delivers 2.8 Ω typ. RDS(on), 9.5 nC total gate charge, and 100% avalanche-tested ruggedness for high-efficiency switching in offline SMPS and industrial AC-DC converters.
For engineers reviewing the STU3LN80K5 datasheet, STU3LN80K5 pinout, STU3LN80K5 application, or STU3LN80K5 equivalent, key selection criteria include its ultra-low Qg/RDS(on) figure of merit, 50 V/ns MOSFET dv/dt ruggedness, Zener-protected gate, and 65 mJ single-pulse avalanche energy - critical for reliable operation in flyback and resonant converters.
Technical Context
This device employs ST's MDmesh K5 proprietary vertical superjunction architecture to achieve industry-leading RDS(on) × area and FoM. Its 800 V breakdown voltage and 2.8 Ω typical on-resistance enable compact, high-power-density designs without sacrificing voltage margin.
The MOSFET integrates a monolithic gate Zener clamp (±30 V rating), supports 4.5 V/ns diode recovery dv/dt, and exhibits 265 ns reverse recovery time at 25 °C - enabling robust commutation in hard-switched topologies with fast-recovery output diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 800 V - Withstands full mains rectified voltage (e.g., 375 V DC + 100% surge) in universal-input offline converters. |
| RDS(on) max | 3.5 Ω @ VGS = 10 V, ID = 1 A - Enables low conduction loss at rated 2.5 A continuous drain current. |
| Qg | 9.5 nC - Reduces gate drive power and switching transition time, improving efficiency in 65–100 kHz SMPS. |
| EAS | 65 mJ - Confirmed single-pulse avalanche energy ensures reliability during unclamped inductive switching events. |
| RthJC | 2.08 °C/W - Allows direct heatsinking via tab; enables 60 W dissipation at TC = 25 °C with minimal thermal derating. |
| dv/dt ruggedness | 50 V/ns - Sustains rapid voltage transients across drain-source without spurious turn-on in high-noise environments. |
| ID (cont) | 2.5 A @ TC = 25 °C - Rated for continuous operation in thermally managed PCB layouts with adequate copper area. |
Pinout & Package
IPAK (TO-251) type C package: 3-pin surface-mount outline with exposed metal tab (Drain-connected) for enhanced thermal performance and mechanical stability. Tab is electrically connected to Drain (D).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires ≤ ±30 V drive; Zener-protected against overvoltage transients. |
| 2 (D / TAB) | Drain / Heatsink Pad | Main high-side switching node; tab is electrically tied to Drain and serves as primary thermal path. |
| 3 (S) | Source | Reference node for gate drive; carries full load current and reverse diode conduction (ISD = 2.5 A). |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh K5 vertical superjunction structure | Reduces RDS(on) × area by >30% vs. prior-generation 800 V MOSFETs, enabling smaller PCB footprints. |
| Ultra-low gate charge (Qg = 9.5 nC) | Lowers driver IC power consumption and gate drive losses, supporting higher-frequency operation without added complexity. |
| 100% avalanche tested | Guarantees minimum 65 mJ EAS per unit - eliminates need for external snubbers in cost-sensitive flyback designs. |
| Zener-protected gate | Integrated ±30 V clamp prevents gate oxide damage during layout parasitic ringing or ESD events. |
| 50 V/ns MOSFET dv/dt ruggedness | Ensures immunity to false triggering during fast voltage transitions in high-side switch configurations. |
Applications
| AC-DC Adapter | Industrial SMPS |
|---|---|
|
Use Scenario: 36 W universal-input (90–264 VAC) flyback converter for medical auxiliary supplies. IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating at 65 kHz with quasi-resonant control. Use Value: 2.8 Ω RDS(on) and 9.5 nC Qg reduce conduction and switching losses, achieving >88% efficiency at full load. |
Use Scenario: 75 W open-frame industrial power supply with active PFC front-end and LLC resonant secondary. IC Role / Device Role / Timing Role: PFC boost switch handling 2.5 A RMS current at 100 kHz. Use Value: 800 V rating and 50 V/ns dv/dt ruggedness prevent failure during line surges and transformer leakage spikes. |
| LED Driver | UPS Inverter Stage |
|
Use Scenario: Constant-current 40 W LED driver for street lighting with wide input range (120–305 VAC). IC Role / Device Role / Timing Role: Primary-side switch in asymmetric half-bridge topology. Use Value: 65 mJ EAS withstands inductive kickback from magnetic components during fault conditions. |
Use Scenario: 1 kVA online UPS with DC-link switching stage feeding H-bridge inverter. IC Role / Device Role / Timing Role: High-side switch in 16 kHz hard-switched DC-AC stage. Use Value: 2.08 °C/W RthJC allows direct mounting to aluminum heatsink, maintaining TJ < 125 °C under 100% load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP3N80K5 | TO-220 package; identical electrical specs but higher RthJA (100 °C/W vs. 2.08 °C/W junction-to-case). | Better suited for through-hole prototyping or lower-power (<25 W) designs where heatsink attachment is less constrained. | Select when board space permits TO-220 footprint and thermal interface design favors screw-mounted heatsinks. |
| STD3N80K5 | TO-252 (DPAK) package; same die but 3× larger RthJC (6.25 °C/W); no integrated Zener protection. | Used in cost-sensitive consumer adapters where gate drive is tightly controlled and avalanche stress is minimal. | Choose only if PCB layout allows sufficient copper area for DPAK thermal relief and system-level gate protection is implemented externally. |
Compared with STP3N80K5 and STD3N80K5, the STU3LN80K5 offers superior thermal performance via IPAK's low-RthJC and built-in gate Zener - making it optimal for compact, high-reliability industrial power stages where board area and transient immunity are critical.
Availability
STU3LN80K5 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, LED drivers, and UPS inverter stages requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for STU3LN80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.
The MDmesh K5 product line targets high-efficiency, high-voltage power conversion - specifically engineered to replace older superjunction MOSFETs in 600–800 V applications demanding lowest RDS(on) × Qg and robust avalanche capability.
FAQ
What is the maximum continuous drain current for STU3LN80K5 at 100 °C case temperature?
The maximum continuous drain current is 1.6 A at TC = 100 °C, as specified in Table 1 of DS9824 Rev 5. This derating reflects thermal limits imposed by the 2.08 °C/W RthJC and 150 °C maximum junction temperature, ensuring safe operation without exceeding SOA boundaries.
Does STU3LN80K5 include integrated gate protection?
Yes - the device integrates a monolithic Zener diode between gate and source, clamping VGS to ±30 V. This is confirmed in the "Features" section and validated by the absolute maximum rating of ±30 V in Table 1, eliminating need for external gate protection in most standard drive circuits.
Can STU3LN80K5 be used in zero-voltage switching (ZVS) topologies?
Yes - its 14 pF Coss, 0.6 pF Crss, and 20 pF Co(tr) enable efficient resonant turn-off. The 265 ns trr and 1.2 µC Qrr at 25 °C support soft-switching in LLC and phase-shifted full-bridge designs operating up to 300 kHz, provided dead-time and resonant tank are properly tuned.
Is the IPAK package lead-free and RoHS-compliant?
Yes - ST certifies the IPAK (TO-251) type C package as ECOPACK2 compliant, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. Full environmental compliance data is published in ST's official ECOPACK documentation referenced in Section 4 of DS9824 Rev 5.
STU3LN80K5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ K5
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 800 V
- Current - Continuous Drain (Id) @ 25°C:
- 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.25Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 2.63 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 102 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 45W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- IPAK (TO-251)
STU3LN80K5 FAQ
1.How can I place an order for STU3LN80K5 through Aetrix?
Please submit a Request for Quotation (RFQ) for STU3LN80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STU3LN80K5 reliable?
The price and inventory of STU3LN80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STU3LN80K5 is usually 5 days.
3.What payment methods are accepted for STU3LN80K5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STU3LN80K5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STU3LN80K5?
STU3LN80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STU3LN80K5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STU3LN80K5?
For technical support, including STU3LN80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STU3LN80K5 requirements.
6.How does Aetrix verify that STU3LN80K5 is sourced from the original manufacturer or authorized distributors?
All STU3LN80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STU3LN80K5 meets industry standards.
7.What is the process for return or replacement of STU3LN80K5?
All STU3LN80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STU3LN80K5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STU3LN80K5 part is unused and in its original packaging.
Return procedure for STU3LN80K5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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