STMicroelectronics STU3N62K3

Overview

STU3N62K3 from STMicroelectronics is an N-channel 620 V, 2.7 A MDmesh™ K3 Power MOSFET in IPAK (TO-251) package, featuring 2.2 Ω typ. R_DS(on), 100 mJ single-pulse avalanche energy, and Zener-protected gate. It serves as a high-voltage switching device in offline SMPS primary-side circuits, PFC stages, and industrial AC-DC converters.

For engineers reviewing the STU3N62K3 datasheet, STU3N62K3 pinout, STU3N62K3 application, or STU3N62K3 equivalent, this page delivers verified electrical ratings, thermal performance data, diode recovery behavior, gate charge profile, and real-world switching timing metrics - all confirmed from DS5888 Rev 3.

Technical Context

This MOSFET employs ST's optimized vertical MDmesh™ K3 structure to achieve ultra-low R_DS(on) × area trade-off while maintaining 620 V breakdown voltage and robust 9 V/ns dv/dt immunity. Its intrinsic gate resistance is 10 Ω, and C_iss/C_oss/C_rss are 385 pF / 55 pF / 6 pF at V_DS = 25 V, enabling fast, low-loss switching in hard-switched topologies.

The integrated source-drain diode exhibits 190 ns reverse recovery time (T_j = 25 °C) and 825 nC Q_rr, with improved softness due to optimized carrier lifetime control. The built-in back-to-back Zener diodes clamp gate-source voltage to ±30 V, eliminating external TVS requirements for ESD protection.

Key Specifications

Pinout & Package

STU3N62K3 uses the IPAK (TO-251) package - a surface-mount variant of TO-251 with isolated tab, optimized for automated assembly and moderate-power thermal management. The molded plastic body measures 6.0–6.2 mm × 6.4–6.6 mm × 16.1–16.8 mm (L×W×H), with 2.28 mm lead pitch and 0.64–0.90 mm lead width.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET switching applications.

Compared with STD3N62K3 and STF3N62K3, STU3N62K3 offers identical electrical performance in a thermally efficient IPAK package that bridges the gap between surface-mount convenience and heatsink-compatible thermal performance - ideal for space-constrained industrial power supplies requiring >30 W output.

Availability

STU3N62K3 is available at Aetrix Electronics and suitable for offline SMPS, industrial PFC boost stages, LED driver power stages, and UPS inverter half-bridges requiring stable component supply and long-term production continuity.

Supply support for STU3N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STU3N62K3 belongs to the MDmesh™ K3 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600 V-class offline power conversion - emphasizing low R_DS(on), fast recovery, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STU3N62K3 supports 1.7 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS5888 Rev 3. This rating reflects thermal derating due to junction-to-case resistance (2.78 °C/W) and maximum T_j limit of 150 °C. Operation above this current requires active cooling or reduced ambient temperature.

Does STU3N62K3 require an external gate resistor for ESD protection?

No - STU3N62K3 integrates back-to-back Zener diodes between gate and source, providing ±30 V clamping per Table 8. This eliminates the need for external gate protection components in typical 10 V gate-drive applications. However, a series gate resistor (4.7–10 Ω) remains recommended to dampen ringing and control dV/dt during switching transitions.

Can STU3N62K3 replace STP3N62K3 in existing designs?

No - STP3N62K3 uses TO-220 package with different pinout (G-D-S vs STU3N62K3's G-S-D), higher R_thj-case (3.5 °C/W), and no Zener protection. While both share 620 V/2.7 A ratings, STU3N62K3's IPAK footprint, thermal profile, and gate protection differ significantly. Board redesign and thermal validation are required for substitution.

What is the safe operating area (SOA) limitation at 100 µs pulse width?

At 100 µs pulse width, the SOA limit for STU3N62K3 is approximately 2.7 A at 400 V (per Figure 1), constrained by both thermal limits and avalanche energy absorption. This corresponds to 108 mJ instantaneous power, closely matching its 100 mJ E_AS rating. Exceeding this boundary risks single-pulse avalanche failure.