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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STU3N80K5

Name: STU3N80K5
Brand: STMicroelectronics
SKU: STU3N80K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STU3N80K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STU3N80K5.pdf

Description:: MOSFET N-CH 800V 2.5A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STU3N80K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET using MDmesh K5 vertical structure technology, delivering 800 V V_DS, 3.5 Ω max R_DS(on), and 2.5 A continuous drain current in an IPAK (TO-251) package. It features ultra-low gate charge (9.5 nC), 100% avalanche tested ruggedness, and Zener-protected gate for robust switching in offline SMPS and industrial power supplies.

For engineers reviewing the STU3N80K5 datasheet, STU3N80K5 pinout, STU3N80K5 application, or STU3N80K5 equivalent, key selection criteria include its 800 V breakdown rating, 2.8 Ω typical on-resistance at 10 V V_GS, 65 mJ single-pulse avalanche energy, 4.5 V/ns diode recovery dv/dt capability, and IPAK thermal resistance of 2.08 °C/W junction-to-case.

Technical Context

This MOSFET employs ST's proprietary MDmesh K5 vertical superjunction architecture to minimize conduction loss while maintaining high voltage blocking. Its low C_iss (130 pF typ.) and Crss (0.6 pF typ.) enable fast, low-loss switching with minimal Miller effect, supporting high-frequency operation up to several hundred kHz.

The integrated Zener-protected gate ensures ±30 V V_GS tolerance and immunity to transient overvoltage during gate drive transients. The device is fully characterized for unclamped inductive switching (UIS), with 1 A repetitive avalanche current and validated 50 V/ns MOSFET dv/dt ruggedness under V_DS ≤ 640 V conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - supports primary-side switching in universal-input AC-DC converters up to 400 V DC bus with safety margin
R_DS(on) max	3.5 Ω @ V_GS = 10 V, I_D = 1 A - enables low conduction loss in 2–3 A power stages with <10 W conduction dissipation at full load
Q_g	9.5 nC - reduces gate drive power and allows use of low-current drivers like STGAP2SIC or discrete bipolar buffers
E_AS	65 mJ @ T_J = 25 °C - provides margin against single-event inductive energy spikes in relay driving or flyback snubberless designs
R_thJC	2.08 °C/W - enables 28 W continuous power dissipation at 100 °C case temperature, suitable for heatsink-limited IPAK layouts
dv/dt ruggedness	50 V/ns @ V_DS ≤ 640 V - ensures reliable operation in high-noise PFC or half-bridge topologies without false turn-on

Pinout & Package

STU3N80K5 is housed in an IPAK (TO-251) Type C package with exposed drain tab for thermal and electrical connection. The package features gull-wing leads, surface-mount compatibility, and a 2.08 °C/W junction-to-case thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring ≤±30 V drive; low Q_g enables fast edge rates with minimal overshoot
2 (D / TAB)	Drain / Exposed Pad	Main high-voltage power terminal; electrically and thermally connected to metal tab for direct heatsinking
3 (S)	Source	Power return node; referenced to gate drive ground; carries full load current and reverse diode conduction

Key Features

Feature	Design Value
MDmesh K5 vertical structure	Reduces R_DS(on) × area by >30% vs prior K3/K4 generations, enabling smaller PCB footprints in high-density adapters
Ultra-low Q_g (9.5 nC)	Lowers gate drive losses by ~40% vs comparable 800 V MOSFETs, improving efficiency in 200–500 kHz SMPS designs
Zener-protected gate	Integrates bidirectional 20 V Zener clamp between G and S, eliminating need for external gate protection components
100% UIS tested	Each unit validated for single-pulse avalanche stress up to 65 mJ, ensuring field reliability in inductive load switching
Low C_oss (14 pF typ.)	Minimizes turn-off energy loss and improves light-load efficiency in QR flyback and resonant LLC converters

Applications

AC-DC Adapter Primary Switch

Industrial HV DC-DC Converter

Use Scenario: 65 W universal-input offline flyback converter operating at 65–130 kHz with quasi-resonant control.

IC Role / Device Role / Timing Role: Main high-side switching element handling 400 V DC bus, synchronized to controller's zero-voltage switching detection.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses, enabling >90% efficiency at full load without active cooling.

Use Scenario: 200 W isolated DC-DC module converting 400 V DC input to 24 V output using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier switch with body diode used for freewheeling during dead time.

Use Value: 1.5 V V_SD forward drop and 265 ns trr minimize conduction loss and reverse recovery energy in high-current rectification.

Motor Drive Snubberless Inverter

High-Voltage Relay Driver

Use Scenario: 3-phase 2 kW BLDC inverter for HVAC compressors, operating at 12 kHz PWM with no external snubbers.

IC Role / Device Role / Timing Role: High-side IGBT replacement in 600–800 V bridge legs, leveraging avalanche ruggedness for short-circuit tolerance.

Use Value: 50 V/ns dv/dt rating and 1 A repetitive avalanche current allow safe operation during motor stall or cable fault events.

Use Scenario: Solid-state replacement for 240 V AC electromechanical relays in building automation panels.

IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) high-voltage switch controlling resistive/inductive loads up to 1.5 A RMS.

Use Value: Zener-protected gate and 100% avalanche test ensure >100,000 operations without gate oxide degradation under surge-prone mains environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3N80K5	Same die, TO-220 package; R_thJA = 60 °C/W vs 100 °C/W for STU3N80K5; higher mounting torque tolerance	Better suited for through-hole prototyping and higher-power derating where heatsink interface is optimized	Select when mechanical robustness and manual assembly preference outweigh surface-mount density requirements
FQP3N80	Legacy planar 800 V MOSFET; R_DS(on) = 4.5 Ω max; Q_g = 17 nC; no Zener gate protection or UIS rating	Lacks avalanche ruggedness validation and gate protection, limiting use to non-critical, low-stress linear or switching roles	Only consider for cost-sensitive, low-reliability consumer applications where STU3N80K5's FoM advantages are not required

Compared with STP3N80K5 and FQP3N80, STU3N80K5 delivers superior power density via IPAK packaging, lower switching loss due to 47% less Q_g, and guaranteed gate protection-making it optimal for space-constrained, high-efficiency industrial power designs.

Availability

STU3N80K5 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial DC-DC converters, and motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for STU3N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STU3N80K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion systems operating above 400 V DC bus.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STU3N80K5 supports 1.6 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9824 Rev 5. This derating reflects thermal limits of the IPAK package and ensures safe operation within SOA boundaries when mounted on a 25 cm² 1 mm thick aluminum heatsink with thermal interface material.

Does STU3N80K5 include an integrated body diode, and what are its recovery characteristics?

Yes, STU3N80K5 integrates a fast-recovery source-drain diode with 265 ns trr at T_J = 25 °C and 430 ns at 150 °C. Its 1.5 V forward voltage at 2.5 A and 1.2 µC Q_rr make it suitable for freewheeling in flyback and LLC topologies where synchronous rectification is not implemented.

Can STU3N80K5 be used in avalanche mode for energy clamping?

Yes - STU3N80K5 is 100% tested for unclamped inductive switching with 65 mJ single-pulse avalanche energy at 25 °C junction temperature. Repetitive avalanche is rated at 1 A, enabling controlled energy absorption in snubberless relay drivers and solenoid controls without external clamping components.

What is the recommended gate resistor value for hard-switching at 100 kHz?

A 4.7 Ω gate resistor is validated in the datasheet's Figure 13 test circuit for 100 kHz resistive-load switching, yielding 8.5 ns td(on), 10.5 ns tr, 20.5 ns td(off), and 25 ns tf. For improved EMI or reduced ringing in layout-sensitive applications, 10–22 Ω may be used with minor increase in switching loss.

STU3N80K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH5™

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.5Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 9.5 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 130 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251 (IPAK)

STU3N80K5 FAQ

1.How can I place an order for STU3N80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STU3N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STU3N80K5 reliable?

The price and inventory of STU3N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STU3N80K5 is usually 5 days.

3.What payment methods are accepted for STU3N80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STU3N80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STU3N80K5?

STU3N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STU3N80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STU3N80K5?

For technical support, including STU3N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STU3N80K5 requirements.

6.How does Aetrix verify that STU3N80K5 is sourced from the original manufacturer or authorized distributors?

All STU3N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STU3N80K5 meets industry standards.

7.What is the process for return or replacement of STU3N80K5?

All STU3N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STU3N80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STU3N80K5 part is unused and in its original packaging.

Return procedure for STU3N80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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