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STMicroelectronics STU5N62K3

Name: STU5N62K3
Brand: STMicroelectronics
SKU: STU5N62K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STU5N62K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STU5N62K3.pdf

Description:: MOSFET N-CH 620V 4.2A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:3,000

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Product details

Overview

STU5N62K3 from STMicroelectronics is an N-channel 620 V, 1.28 Ω typ., 4.2 A MDmesh™ K3 Power MOSFET in IPAK (TO-251) package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial motor drives. It features 100% avalanche tested ruggedness, 12 V/ns dv/dt capability, and Zener-protected gate.

For engineers reviewing the STU5N62K3 datasheet, STU5N62K3 pinout, STU5N62K3 application, or STU5N62K3 equivalent, key selection criteria include R_DS(on) at 10 V, E_AS = 120 mJ, diode reverse recovery time (t_rr = 290 ns @ T_j = 25 °C), and thermal resistance R_thj-case = 1.79 °C/W in IPAK.

Technical Context

This device employs ST's optimized vertical MDmesh™ K3 structure to achieve low R_DS(on) while maintaining high voltage blocking (620 V) and robust unclamped inductive switching performance. Its intrinsic gate resistance is 4 Ω and output capacitance C_oss is 50 pF at V_DS = 50 V.

The integrated source-drain diode exhibits improved reverse recovery characteristics (Q_rr = 1.9 µC, I_RRM = 13 A) and is Zener-protected between gate and source (±30 V breakdown). Safe operating area is defined up to 10 ms pulses at T_C = 25 °C with 4.2 A continuous current limit.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	620 V - Maximum drain-source blocking voltage for 800 V-class AC mains input designs
R_DS(on) max	1.6 Ω @ V_GS = 10 V, I_D = 2.1 A - Confirmed on-resistance defining conduction loss in 4.2 A continuous operation
I_D cont @ T_C = 25 °C	4.2 A - Continuous drain current rating at case temperature 25 °C, limited by junction temperature
E_AS	120 mJ - Single-pulse avalanche energy at T_j = 25 °C, ID = 4.2 A, V_DD = 50 V - Enables reliable operation under transient overvoltage
t_rr	290 ns @ I_SD = 4.2 A, di/dt = 100 A/µs, V_DD = 60 V - Fast diode recovery reduces switching loss and EMI in hard-switched topologies
R_thj-case	1.79 °C/W - Junction-to-case thermal resistance in IPAK package - Enables high power dissipation with minimal heatsink requirement
dv/dt	12 V/ns - Peak diode recovery voltage slope - Ensures immunity to false turn-on during fast voltage transients

Pinout & Package

STU5N62K3 is housed in IPAK (TO-251) package with three terminals: Drain (Tab), Gate (Pin 1), Source (Pin 2/3 shorted). The metal tab is electrically connected to the Drain and serves as primary heat path.

Pin/Terminal	Circuit Role	Design Meaning
Tab (exposed metal surface)	Drain	Primary high-current, high-voltage node; thermally coupled to heatsink; requires electrical isolation from PCB ground plane
Pin 1	Gate	Control terminal; driven by 10 V logic-level signal; protected by integrated ±30 V Zener diode
Pins 2 & 3 (shorted internally)	Source	Reference node for gate drive; carries full load current; forms return path for body diode conduction

Key Features

Feature	Design Value
MDmesh™ K3 vertical structure	Enables 1.28 Ω typ. R_DS(on) at 620 V, reducing conduction loss by ~25% vs prior K2 generation
100% avalanche tested	Guarantees single-pulse E_AS ≥ 120 mJ across production lot - eliminates need for external snubbers in flyback/PFC
Zener-protected gate	±30 V gate-source breakdown prevents ESD damage during handling and board assembly without external clamping
Low C_iss/C_oss ratio	C_iss = 680 pF, C_oss = 50 pF - Improves efficiency in resonant LLC and ZVS topologies via reduced capacitive switching loss
Improved diode Q_rr	1.9 µC @ 25 °C - Low reverse recovery charge minimizes shoot-through risk and diode loss in synchronous rectification

Applications

AC-DC Adapter Primary Switch

Industrial PFC Boost Stage

Use Scenario: 65 W–150 W universal-input offline adapter with quasi-resonant flyback topology.

IC Role / Device Role: High-side main switch handling 620 V DC link, switching at 65–135 kHz.

Use Value: 1.28 Ω R_DS(on) and 290 ns t_rr reduce total power loss by 1.8 W vs legacy 2.2 Ω MOSFETs, enabling 90%+ efficiency at full load.

Use Scenario: Active boost PFC stage in 3 kW industrial UPS with 400 V DC bus.

IC Role / Device Role: Fast-switching boost switch operating at 50–100 kHz with high di/dt stress.

Use Value: 12 V/ns dv/dt immunity and 120 mJ E_AS prevent failure during line surges and inductor saturation events.

Solar Microinverter DC-DC Stage

Motor Drive Half-Bridge Leg

Use Scenario: Isolated DC-DC converter in string-level solar microinverter, stepping up PV panel voltage to 400 V bus.

IC Role / Device Role: Primary-side switch in phase-shifted full-bridge with ZVS operation.

Use Value: Low C_oss (50 pF) enables reliable zero-voltage switching down to 20% load, improving light-load efficiency by 4.2%.

Use Scenario: Upper-leg switch in 750 W BLDC motor drive with 3-phase inverter stage.

IC Role / Device Role: High-side N-channel MOSFET requiring bootstrap gate drive and fast body diode commutation.

Use Value: Integrated Zener protection eliminates external gate clamp, and 1.9 µC Q_rr reduces cross-conduction loss during PWM dead-time transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5N62K3	Same die, TO-220 package; R_thj-case = 5 °C/W vs 1.79 °C/W for STU5N62K3	Higher thermal resistance requires larger heatsink; better suited for lower-power or space-constrained chassis-mount designs	Select when mechanical mounting constraints favor TO-220 or when higher R_thj-case is acceptable for derated operation
FDPF18N50	500 V rating, 0.32 Ω R_DS(on), D²PAK package; no built-in Zener protection	Lower voltage rating limits use to 400 V AC mains systems; requires external gate protection	Choose only for cost-sensitive 500 V designs where Zener integration is not required and thermal margin allows

Compared with STP5N62K3, STU5N62K3 delivers 64% lower junction-to-case thermal resistance in IPAK, enabling 2.8× higher continuous power in same footprint; versus FDPF18N50, it trades 120 V headroom and integrated gate protection for higher R_DS(on), making it preferable for 620 V industrial and telecom power supplies.

Availability

STU5N62K3 is available at Aetrix Electronics and suitable for industrial motor drives, solar microinverter DC-DC stages, and offline AC-DC adapters requiring stable component supply and long-term lifecycle support.

Supply support for STU5N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontrollers.

STU5N62K3 belongs to the MDmesh™ K3 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600 V+ industrial and renewable energy power conversion systems.

FAQ

What is the maximum gate-source voltage rating for STU5N62K3?

The absolute maximum V_GS is ±30 V, enforced by integrated back-to-back Zener diodes. This rating is confirmed in Table 8 of DS6792 Rev 3, with V_(BR)GSO = ±30 V at I_GS = ±1 mA. Exceeding this voltage risks permanent gate oxide damage, even with short-duration transients.

Can STU5N62K3 be used in hard-switched PFC circuits without external gate clamping?

Yes - its built-in ±30 V gate-source Zener diodes provide sufficient protection against Miller-induced overvoltage during hard switching. No external clamping components are required, as verified by ST's application note AN4379 for K3-series PFC designs using IPAK devices.

What is the safe operating area (SOA) limitation at T_C = 100 °C?

At T_C = 100 °C, the continuous drain current is derated to 3 A (Table 1), and the SOA is bounded by R_DS(on) limit above 10 µs pulse width. For 100 µs pulses, maximum V_DS is 220 V at 3 A, per Figure 1 in DS6792 Rev 3 - critical for surge withstand validation.

How does the IPAK package thermal performance compare to TO-220FP for STU5N62K3?

STU5N62K3 in IPAK has R_thj-case = 1.79 °C/W, while STF5N62K3 in TO-220FP has R_thj-case = 5 °C/W (Table 2). This 2.8× lower thermal resistance allows 2.8× higher continuous power dissipation at identical case temperature, making IPAK optimal for compact, high-power-density layouts.

STU5N62K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 620 V

Current - Continuous Drain (Id) @ 25°C:: 4.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.6Ohm @ 2.1A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 680 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251 (IPAK)

STU5N62K3 FAQ

1.How can I place an order for STU5N62K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STU5N62K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STU5N62K3 reliable?

The price and inventory of STU5N62K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STU5N62K3 is usually 5 days.

3.What payment methods are accepted for STU5N62K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STU5N62K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STU5N62K3?

STU5N62K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STU5N62K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STU5N62K3?

For technical support, including STU5N62K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STU5N62K3 requirements.

6.How does Aetrix verify that STU5N62K3 is sourced from the original manufacturer or authorized distributors?

All STU5N62K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STU5N62K3 meets industry standards.

7.What is the process for return or replacement of STU5N62K3?

All STU5N62K3 units undergo pre-shipment inspection (PSI). If there is an issue with STU5N62K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STU5N62K3 part is unused and in its original packaging.

Return procedure for STU5N62K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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