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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STU60N3LH5

Name: STU60N3LH5
Brand: STMicroelectronics
SKU: STU60N3LH5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STU60N3LH5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STU60N3LH5.pdf

Description:: MOSFET N-CH 30V 48A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:8,044

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Product details

Overview

STU60N3LH5 from STMicroelectronics is an N-channel 30 V, 48 A Power MOSFET in IPAK (TO-251) package, featuring 0.0084 Ω R_DS(on) at V_GS = 10 V and 24 A, 8.8 nC total gate charge, and 160 mJ single-pulse avalanche energy - deployed in high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the STU60N3LH5 datasheet, STU60N3LH5 pinout, STU60N3LH5 application, or STU60N3LH5 equivalent, key selection criteria include R_DS(on) vs. gate drive voltage, safe operating area under pulsed ID_M = 192 A, thermal resistance (R_thj-case = 2.5 °C/W), and source-drain diode recovery (t_rr = 25 ns, Q_rr = 18.5 nC).

Technical Context

This STripFET™ V MOSFET uses a trench-gate process optimized for low R_DS(on) × Q_g figure of merit, with gate threshold voltage V_GS(th) = 1–3 V and guaranteed avalanche ruggedness up to 160 mJ. Its internal structure supports fast switching (t_d(on) = 6 ns, t_f = 4.2 ns) under 10 V gate drive with 4.7 Ω external gate resistor.

The device integrates a robust body diode with 1.1 V forward voltage at I_SD = 24 A and exhibits stable on-resistance over temperature (±20% from -55 °C to 175 °C), enabling reliable operation in thermally constrained industrial power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum drain-source voltage - defines safe blocking capability in 24 V bus systems
R_DS(on)	0.0084 Ω max at V_GS = 10 V, I_D = 24 A - enables <1 W conduction loss at 40 A continuous current
Q_g	12.3 nC max - determines gate driver current requirement and switching loss trade-off
I_D (cont)	48 A at T_C = 25 °C - specifies maximum continuous current with heatsink at case temperature
E_AS	160 mJ single-pulse avalanche energy - ensures survivability during inductive turn-off transients
R_thj-case	2.5 °C/W max - sets junction-to-case thermal gradient for thermal design margining
t_r/t_f	33 ns / 4.2 ns - defines edge speed for EMI control and switching loss estimation

Pinout & Package

STU60N3LH5 is housed in IPAK (TO-251) package - a surface-mount variant of TO-220 with isolated tab, 3-pin configuration, and 2.5 °C/W thermal resistance. The plastic body provides creepage/clearance compliant with industrial safety standards.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-inductance connection point; tied to PCB ground plane for thermal and EMI performance
2 (Gate)	Control terminal for channel conduction	High-impedance input requiring <12.3 nC charge for full enhancement; sensitive to ESD
3 (Drain)	Main power output node	Internally connected to exposed tab; must be electrically isolated from heatsink unless referenced to system ground

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g	Industry benchmark FoM enabling <0.1 W switching loss at 100 kHz in 48 V/20 A buck converter
High avalanche ruggedness	160 mJ single-pulse rating allows unclamped inductive switching without external snubbers
Low gate drive power	8.8 nC Q_gs + Q_gd minimizes driver IC power dissipation and simplifies gate bias design
Robust body diode	25 ns reverse recovery time and 18.5 nC Q_rr reduce shoot-through risk in synchronous rectification

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Buck Converter

Use Scenario: High-side switch in 24 V BLDC motor gate driver stage with PWM frequency up to 50 kHz.

IC Role / Device Role / Timing Role: Power switching element controlling phase current flow; operates in hard-switched mode with 10 V gate drive.

Use Value: 0.0084 Ω R_DS(on) limits conduction loss to ≤1.35 W at 40 A, while 2.5 °C/W R_thj-case enables compact heatsinking.

Use Scenario: Low-side synchronous rectifier in 12 V → 3.3 V, 20 A point-of-load converter.

IC Role / Device Role / Timing Role: Active freewheeling switch replacing Schottky diode; driven complementary to high-side FET.

Use Value: 25 ns t_rr and 18.5 nC Q_rr minimize reverse recovery losses and prevent cross-conduction during dead-time.

Industrial Power Supply OR-ing

Automotive Body Control Module Load Switch

Use Scenario: Redundant 24 V supply OR-ing diode replacement in telecom shelf power distribution.

IC Role / Device Role / Timing Role: Low-loss ideal diode controller interface; operated in linear region during transition, fully enhanced during steady state.

Use Value: 1.1 V V_SD at 24 A reduces forward drop by >60% versus 40 V Schottky, cutting heat generation in parallel supply paths.

Use Scenario: 12 V battery-fed load switch for HVAC actuator control in passenger compartment.

IC Role / Device Role / Timing Role: High-current electronic fuse with controlled turn-on slew rate and overcurrent shutdown support.

Use Value: 192 A pulsed I_DM withstands motor stall currents; 175 °C T_j rating supports under-dash ambient conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STD60N3LH5	R_DS(on) = 0.0072 Ω (SMD DPAK), lower on-resistance but higher Q_g (12.3 nC vs. 8.8 nC)	Suitable for space-constrained PCB layouts where thermal pad soldering is feasible	Select when board-level thermal management favors DPAK footprint and lower conduction loss dominates design priority
STP60N3LH5	TO-220 through-hole package; identical R_DS(on) and Q_g, but R_thj-case = 1.6 °C/W (lower thermal resistance)	Better suited for prototyping, high-reliability industrial modules, or forced-air cooled systems	Choose when mechanical robustness, serviceability, or superior heatsink coupling outweighs surface-mount assembly requirements

Compared with STD60N3LH5 and STP60N3LH5, STU60N3LH5 offers IPAK's middle-ground thermal performance (2.5 °C/W) and mounting flexibility - ideal for automated SMT production of medium-power motor drives where DPAK layout density is insufficient and TO-220 footprint is excessive.

Availability

STU60N3LH5 is available at Aetrix Electronics and suitable for motor drive half-bridges, DC-DC synchronous buck converters, and industrial OR-ing applications requiring stable component supply across multi-year production cycles.

Supply support for STU60N3LH5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STU60N3LH5 belongs to the STripFET™ V Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in space- and thermally-constrained power conversion systems.

FAQ

What is the maximum continuous drain current for STU60N3LH5 at 100 °C case temperature?

The maximum continuous drain current is 42.8 A at T_C = 100 °C, derated from 48 A at 25 °C using the specified 0.4 W/°C thermal derating factor and R_DS(on) temperature coefficient. This value reflects actual conduction capability under sustained thermal stress in enclosed enclosures.

Does STU60N3LH5 require a gate resistor for stability, and what value is recommended?

A 4.7 Ω gate resistor is used in the official switching characterization (Figure 13/18), providing optimal trade-off between switching speed (t_d(on) = 6 ns, t_f = 4.2 ns) and gate oscillation suppression. Lower values increase EMI risk; higher values raise switching losses without improving reliability in standard 10 V drive configurations.

Can STU60N3LH5 be used in avalanche mode for circuit protection?

Yes - it is rated for 160 mJ single-pulse avalanche energy (T_j = 25 °C, I_D = 24 A, V_DD = 12 V). This enables use in unclamped inductive switching without external snubbers, but repetitive avalanche operation is not characterized and requires careful thermal validation per application.

Is the exposed drain tab on the IPAK package electrically isolated?

No - Pin 3 (Drain) is internally connected to the exposed metal tab. When mounted on a heatsink, electrical isolation (e.g., mica washer or insulating pad) is mandatory unless the heatsink is referenced to system ground. The IPAK mechanical drawing confirms direct tab-to-drain metallurgical bond.

STU60N3LH5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ V

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 48A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 8.4mOhm @ 24A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.8 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1620 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

STU60N3LH5 FAQ

1.How can I place an order for STU60N3LH5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STU60N3LH5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STU60N3LH5 reliable?

The price and inventory of STU60N3LH5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STU60N3LH5 is usually 5 days.

3.What payment methods are accepted for STU60N3LH5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STU60N3LH5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STU60N3LH5?

STU60N3LH5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STU60N3LH5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STU60N3LH5?

For technical support, including STU60N3LH5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STU60N3LH5 requirements.

6.How does Aetrix verify that STU60N3LH5 is sourced from the original manufacturer or authorized distributors?

All STU60N3LH5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STU60N3LH5 meets industry standards.

7.What is the process for return or replacement of STU60N3LH5?

All STU60N3LH5 units undergo pre-shipment inspection (PSI). If there is an issue with STU60N3LH5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STU60N3LH5 part is unused and in its original packaging.

Return procedure for STU60N3LH5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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