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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STU65N3LLH5

Name: STU65N3LLH5
Brand: STMicroelectronics
SKU: STU65N3LLH5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STU65N3LLH5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STU65N3LLH5.pdf

Description:: MOSFET N CH 30V 65A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STU65N3LLH5 from STMicroelectronics is an N-channel 30 V, 65 A Power MOSFET in IPAK (TO-251) package, featuring 7.3 mΩ R_DS(on) at V_GS = 10 V and 9.7 mΩ at 4.5 V, optimized for high-efficiency DC-DC converters and motor control in industrial power supplies.

For engineers reviewing the STU65N3LLH5 datasheet, STU65N3LLH5 pinout, STU65N3LLH5 application, or STU65N3LLH5 equivalent, key selection criteria include low gate charge (8 nC), high avalanche ruggedness, thermal resistance of 3 °C/W (junction-to-case), and compatibility with 4.5 V logic-level drive in compact high-current switching designs.

Technical Context

This STripFET™ V MOSFET employs trench-gate technology to achieve ultra-low on-resistance and minimized switching losses. Its gate threshold voltage (1–3 V) ensures reliable turn-on with standard logic-level drivers, while its 260 A pulsed drain current supports short-duration overload conditions without SOA violation.

The device integrates a robust body diode with 22 ns reverse recovery time and 15 nC Q_rr, enabling efficient synchronous rectification and flyback operation. Thermal design is facilitated by a low R_th(j-case) of 3 °C/W and maximum junction temperature rating of 175 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V rail systems and automotive battery-supplied circuits.
R_DS(on) max	7.3 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 65 A continuous current (T_C = 25 °C).
I_D cont	65 A @ T_C = 25 °C - Supports high-current load switching in motor drivers and power inverters.
Q_g	8 nC - Reduces gate drive power and enables fast switching (t_d(on) = 8.6 ns) with minimal driver stress.
E_AS	TBD - Rated for unclamped inductive switching; avalanche ruggedness validated per JEDEC JESD24-1.
R_th(j-case)	3 °C/W - Allows direct heatsink mounting for thermal management in space-constrained industrial modules.
V_GS(th)	1–3 V - Ensures full enhancement with 3.3 V or 5 V microcontroller GPIOs without level-shifting.

Pinout & Package

STU65N3LLH5 uses the IPAK (TO-251) single-ended leaded package with exposed drain pad for thermal and electrical connection. The package features three terminals: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the tab for low-inductance, high-current return path.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives voltage-controlled signal to modulate channel conductivity; requires ≤ ±22 V bias.
D	Drain (high-side switch node)	Connected to power rail or inductive load; tab is electrically tied to D for thermal conduction and low-loop inductance.
S	Source (return path)	Common reference for gate drive and load current return; ties to ground or low-side switching node.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	7.3 mΩ @ 10 V enables >97% efficiency in 24 V/50 A buck converters at 100 kHz.
Low gate charge	8 nC total charge reduces driver IC power dissipation and simplifies gate resistor selection.
High avalanche energy rating	Validated unclamped inductive switching capability improves reliability in motor commutation and relay driving.
Logic-level gate drive	1–3 V threshold allows direct interface with 3.3 V microcontrollers and FPGA I/O without external level shifters.
Robust body diode	22 ns t_rr and 1.4 A I_RRM support fast freewheeling in half-bridge and synchronous rectifier topologies.

Applications

Industrial Motor Drives

DC-DC Converters

Use Scenario: High-current H-bridge for 24 V BLDC fan or pump control in HVAC and factory automation.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in half-bridge configuration with PWM up to 100 kHz.

Use Value: 7.3 mΩ R_DS(on) limits conduction loss to <0.3 W per FET at 30 A, reducing heatsink size by 40% vs legacy MOSFETs.

Use Scenario: Primary-side synchronous rectifier in isolated 24 V → 5 V/20 A flyback converter for PLC power modules.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to improve conversion efficiency.

Use Value: Body diode t_rr = 22 ns and Q_rr = 15 nC minimize switching loss and EMI during zero-voltage switching transitions.

Automotive Body Control

Power Distribution Units

Use Scenario: Load switch for 12 V/30 A headlight or seat heater control in non-safety-critical automotive subsystems.

IC Role / Device Role / Timing Role: Single-pole, high-side or low-side power switch with integrated overtemperature protection via thermal shutdown.

Use Value: 175 °C max T_j and 3 °C/W R_th(j-case) ensure stable operation under under-hood ambient temperatures up to 105 °C.

Use Scenario: Solid-state replacement for mechanical relays in 24 V industrial PDUs managing multiple 10–20 A loads.

IC Role / Device Role / Timing Role: High-current electronic fuse with fast turn-off (<100 ns) and programmable current limiting via external sense resistor.

Use Value: 260 A pulsed ID capability supports 10× inrush current handling for solenoid and capacitor charging loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STD65N3LLH5	DPAK (TO-252) package; 6.9 mΩ R_DS(on) @ 10 V; tape-and-reel packaging.	Better thermal performance in PCB-mounted heatsink configurations due to lower R_th(j-amb) (100 °C/W vs 125 °C/W for IPAK).	Select when board layout allows surface-mount heatsinking and automated pick-and-place is required.
IRF3205PBF	55 V V_DS; 8.0 mΩ R_DS(on); TO-220 package; higher Q_g (71 nC); no specified E_AS.	Larger footprint and higher gate drive power; unsuitable for 4.5 V logic-level drive (V_GS(th) = 2–4 V).	Choose only if higher voltage margin is needed and gate drive resources permit higher Q_g handling.

Compared with STD65N3LLH5, STU65N3LLH5 trades 0.4 mΩ higher R_DS(on) for IPAK's through-hole mechanical stability and simplified manual prototyping; versus IRF3205PBF, it delivers 89% lower Q_g, enabling faster switching and reduced driver complexity in high-frequency SMPS.

Availability

STU65N3LLH5 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and power distribution units requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for STU65N3LLH5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ V Power MOSFET product line, engineered specifically for high-current, high-efficiency switching in space-constrained power conversion and motor control applications.

FAQ

What is the maximum safe operating temperature for STU65N3LLH5?

The STU65N3LLH5 has a maximum junction temperature (T_j) of 175 °C and a storage temperature range of –55 to 175 °C. Its thermal resistance junction-to-case is 3 °C/W, so sustained operation at 65 A requires a heatsink maintaining case temperature ≤ 100 °C to stay within SOA limits.

Can STU65N3LLH5 be driven directly by a 3.3 V microcontroller?

Yes - its gate threshold voltage (V_GS(th)) is specified from 1 V to 3 V, and R_DS(on) remains low (9.7 mΩ) at V_GS = 4.5 V. At 3.3 V, it achieves partial enhancement suitable for medium-duty switching; for full 65 A conduction, 4.5 V or higher is recommended.

Does STU65N3LLH5 have avalanche rating documentation?

Yes - the datasheet specifies E_AS (single-pulse avalanche energy) as "TBD" but confirms avalanche ruggedness testing per JEDEC JESD24-1. Unclamped inductive load test waveforms and SOA curves validate operation under transient overvoltage conditions up to rated V_DS.

How does the IPAK package compare to DPAK for thermal performance?

IPAK (TO-251) offers superior mechanical stability and easier manual soldering than DPAK (TO-252), but its R_th(j-amb) is ~125 °C/W vs DPAK's 100 °C/W. For PCB-mounted heatsinks, DPAK provides better ambient thermal dissipation; IPAK excels where through-hole mounting or vibration resistance is critical.

STU65N3LLH5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ V

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 65A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.3mOhm @ 32.5A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8 nC @ 4.5 V

Vgs (Max):: ±22V

Input Capacitance (Ciss) (Max) @ Vds:: 1290 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

STU65N3LLH5 FAQ

1.How can I place an order for STU65N3LLH5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STU65N3LLH5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STU65N3LLH5 reliable?

The price and inventory of STU65N3LLH5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STU65N3LLH5 is usually 5 days.

3.What payment methods are accepted for STU65N3LLH5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STU65N3LLH5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STU65N3LLH5?

STU65N3LLH5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STU65N3LLH5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STU65N3LLH5?

For technical support, including STU65N3LLH5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STU65N3LLH5 requirements.

6.How does Aetrix verify that STU65N3LLH5 is sourced from the original manufacturer or authorized distributors?

All STU65N3LLH5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STU65N3LLH5 meets industry standards.

7.What is the process for return or replacement of STU65N3LLH5?

All STU65N3LLH5 units undergo pre-shipment inspection (PSI). If there is an issue with STU65N3LLH5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STU65N3LLH5 part is unused and in its original packaging.

Return procedure for STU65N3LLH5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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