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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STU6N60M2

Name: STU6N60M2
Brand: STMicroelectronics
SKU: STU6N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STU6N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STU6N60M2.pdf

Description:: MOSFET N-CH 600V 4.5A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STU6N60M2 from STMicroelectronics is an N-channel 600 V, 1.06 Ω typ. (1.2 Ω max.), 4.5 A MDmesh™ M2 Power MOSFET in TO-220FP package, optimized for high-efficiency SMPS and PFC stages with low gate charge (8 nC) and rugged 50 V/ns dv/dt capability.

For engineers reviewing the STU6N60M2 datasheet, STU6N60M2 pinout, STU6N60M2 application, or STU6N60M2 equivalent, this device supports critical high-voltage switching in industrial AC-DC converters, server power supplies, and LED drivers where low conduction loss, fast switching, and avalanche robustness are required.

Technical Context

This MOSFET employs ST's MDmesh M2 strip layout and enhanced vertical structure to achieve low R_DS(on) and a flat C_oss profile across V_DS, enabling soft-switching compatibility and reduced switching losses in resonant topologies.

It features Zener-protected gate oxide, 100% unclamped inductive avalanche tested (E_AS = 86 mJ), and a source-drain diode with 274 ns reverse recovery time and 1.47 µC Q_rr at 25 °C - critical for synchronous rectification and flyback snubberless designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in universal-input (85–265 VAC) offline converters up to 400 VDC bus.
R_DS(on) max	1.2 Ω @ V_GS = 10 V, I_D = 2.25 A - enables <1.2 W conduction loss at 4.5 A, reducing heatsink requirements.
Q_g	8 nC - allows fast turn-on with low drive power; compatible with standard 1-A gate drivers at >100 kHz.
C_oss eq.	71 pF - low voltage-dependent output capacitance improves efficiency in LLC and QR flyback by minimizing capacitive switching loss.
dv/dt ruggedness	50 V/ns - withstands high dV/dt transients in hard-switched converters without false turn-on or latch-up.
E_AS	86 mJ - rated single-pulse avalanche energy ensures reliability during overvoltage events like transformer leakage spikes.
T_J max	150 °C - supports operation in sealed enclosures or high-ambient industrial environments with derated current.

Pinout & Package

TO-220FP (Full-Pak) package: insulated plastic case with internal isolation between drain tab and leads; 3-pin through-hole mounting; R_thJC = 6.25 °C/W; creepage ≥ 4 mm.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control input; requires ≤±25 V rating; 6.5 Ω intrinsic gate resistance limits ringing.
2 (D, TAB)	Drain (exposed metal tab)	Primary high-voltage node; electrically isolated from PCB mount surface; connects directly to heat sink.
3 (S)	Source	Power return path and gate reference; ties to low-side switch node; carries full load current and diode recovery current.

Key Features

Feature	Design Value
MDmesh M2 technology	Optimized strip-cell layout reduces R_DS(on) × area product by 30% vs. prior generation, improving power density.
Zener-protected gate	Integrated gate oxide protection clamps transient overvoltage to ±25 V, eliminating need for external gate Zener.
Low C_oss profile	C_oss remains stable from 0–480 V (C_oss eq. = 71 pF), enabling predictable timing in resonant controllers.
100% avalanche tested	Each unit undergoes unclamped inductive switching test at I_AR = 1 A, ensuring production-level ruggedness.
ECOPACK® compliant	Halogen-free, RoHS-compliant packaging meets industrial environmental compliance requirements without performance trade-off.

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-efficiency 80 PLUS Titanium AC-DC front-end with continuous conduction mode (CCM) boost PFC and LLC resonant DC-DC stage.

IC Role / Device Role / Timing Role: Main switching device in boost PFC stage; operates at 65–100 kHz with zero-current switching (ZCS) transition.

Use Value: Low Q_g (8 nC) and flat C_oss reduce driver loss and improve light-load efficiency; 50 V/ns dv/dt rating prevents false triggering during fast voltage transitions.

Use Scenario: 3.3 kW industrial motor drive with active front-end (AFE) rectifier and regenerative braking.

IC Role / Device Role / Timing Role: Upper-leg switch in three-phase Vienna rectifier; handles 600 V DC link with bidirectional current flow via body diode.

Use Value: 1.47 µC Q_rr and 274 ns t_rr minimize commutation loss and EMI; avalanche rating protects against line surge-induced overvoltage.

LED Streetlight Driver

Telecom DC-DC Brick

Use Scenario: Outdoor-rated 150 W constant-current LED driver using quasi-resonant flyback topology with primary-side regulation.

IC Role / Device Role / Timing Role: Primary-side power switch; turns off at zero current to reduce EMI and stress; body diode conducts reflected output energy.

Use Value: 86 mJ E_AS absorbs leakage inductance energy without snubber; TO-220FP insulation (2.5 kV RMS) meets reinforced isolation requirements.

Use Scenario: 48 V input, 12 V/30 A telecom DC-DC brick with dual forward or phase-shifted full-bridge architecture.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier driver switch; used in active clamp or freewheeling leg with high di/dt.

Use Value: 18 A pulsed drain current (I_DM) supports peak overload conditions; low R_DS(on) minimizes conduction loss at 30 A average output.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6N60M2	Same die, TO-220 (non-isolated) package; R_thJC = 2.08 °C/W vs. 6.25 °C/W; no internal insulation.	Requires external insulator pad and thermal interface; suitable only where chassis ground is not referenced to drain potential.	Select when lower thermal resistance is prioritized and isolation is managed externally.
IPP60R190C7	Infineon CoolMOS™ C7; 600 V, 0.19 Ω typ., higher R_DS(on) but superior C_oss linearity and lower Q_g/Q_gd ratio.	Better suited for ultra-high-frequency (>300 kHz) totem-pole PFC; requires tighter gate drive design due to lower V_GS(th).	Select for >200 kHz designs where switching loss dominates conduction loss.

Compared with STP6N60M2, STU6N60M2 provides built-in isolation for simplified heatsink mounting and safety compliance; compared with IPP60R190C7, it offers higher ruggedness margin and simpler gate drive but trades off some high-frequency efficiency.

Availability

STU6N60M2 is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and outdoor LED lighting systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STU6N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STU6N60M2 belongs to the MDmesh™ M2 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and infrastructure applications.

FAQ

What is the maximum continuous drain current for STU6N60M2 at 100 °C case temperature?

The maximum continuous drain current (I_D) is 2.9 A at T_C = 100 °C, as specified in Table 1 of DS9734 Rev 3. This derating reflects thermal limits of the TO-220FP package (R_thJC = 6.25 °C/W) and ensures safe operation within the SOA boundary at elevated temperatures.

Does STU6N60M2 include integrated gate protection?

Yes - STU6N60M2 integrates Zener-protected gate oxide, clamping gate-source voltage to ±25 V. This eliminates the need for external gate Zener diodes in most designs and enhances robustness against ESD and transient overvoltage during board handling or system operation.

Can STU6N60M2 be used in synchronous rectification configurations?

No - STU6N60M2 is a standard N-channel enhancement-mode MOSFET intended for high-side or low-side switching, not synchronous rectification. Its body diode has 274 ns t_rr and 1.47 µC Q_rr, which are unsuitable for high-frequency SR; dedicated SR controllers or logic-level FETs are recommended instead.

What is the insulation voltage rating of the TO-220FP package?

The TO-220FP package provides 2.5 kV RMS insulation withstand voltage from all three leads to external heat sink (t = 1 s, T_C = 25 °C), per Table 1 in DS9734 Rev 3. This meets reinforced insulation requirements for Class I equipment in industrial and telecom power applications.

STU6N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II Plus

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 2.25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 232 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251 (IPAK)

STU6N60M2 FAQ

1.How can I place an order for STU6N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STU6N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STU6N60M2 reliable?

The price and inventory of STU6N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STU6N60M2 is usually 5 days.

3.What payment methods are accepted for STU6N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STU6N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STU6N60M2?

STU6N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STU6N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STU6N60M2?

For technical support, including STU6N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STU6N60M2 requirements.

6.How does Aetrix verify that STU6N60M2 is sourced from the original manufacturer or authorized distributors?

All STU6N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STU6N60M2 meets industry standards.

7.What is the process for return or replacement of STU6N60M2?

All STU6N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STU6N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STU6N60M2 part is unused and in its original packaging.

Return procedure for STU6N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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