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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STU6N65K3

Name: STU6N65K3
Brand: STMicroelectronics
SKU: STU6N65K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STU6N65K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STU6N65K3.pdf

Description:: MOSFET N-CH 650V 5.4A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:6,023

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Product details

Overview

STU6N65K3 from STMicroelectronics is an N-channel 650 V, 1.1 Ω typ., 5.4 A MDmesh K3 Power MOSFET in IPAK package, designed for high-efficiency switching in offline SMPS, PFC stages, and industrial motor drives. It delivers 100% avalanche-tested ruggedness, 12 V/ns dv/dt capability, and low 880 pF input capacitance.

For engineers reviewing the STU6N65K3 datasheet, STU6N65K3 pinout, STU6N65K3 application, or STU6N65K3 equivalent, key selection criteria include R_DS(on) stability over temperature, Zener-protected gate robustness, reverse recovery charge (Q_rr = 5.1 µC), and TO-220FP-compatible thermal performance (R_thJC = 4.17 °C/W).

Technical Context

This device employs ST's optimized vertical MDmesh K3 structure to achieve ultra-low conduction loss while maintaining fast switching dynamics. Its 12 V/ns peak diode recovery dv/dt rating and 100 mJ single-pulse avalanche energy (E_AS) support reliable operation under hard-switching and unclamped inductive load conditions.

The integrated Zener-protected gate withstands ±2.5 kV HBM ESD stress, and its improved body diode exhibits 285 ns reverse recovery time (T_rr) at 25 °C with low I_RRM (14 A) - critical for reducing switching losses and voltage overshoot in bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports universal AC input (85–265 VAC) with ≥2× safety margin in flyback and LLC resonant converters
R_DS(on) max	1.3 Ω - ensures <1.4 W conduction loss at 5.4 A continuous drain current (T_C = 25 °C)
Q_g	33 nC - enables efficient gate drive with standard 1-A peak drivers and reduces switching transition time
C_iss	880 pF - minimizes capacitive loading on gate driver, supporting >100 kHz operation with low driver power dissipation
E_AS	100 mJ - guarantees safe energy absorption during unclamped inductive turn-off without junction failure
T_J max	150 °C - allows sustained operation in sealed industrial enclosures with limited airflow

Pinout & Package

IPAK (TO-251AA) package: isolated tab, surface-mount compatible, with 3.2 mm lead diameter and 10.4 mm height (L3 = 30.6 mm). Thermal resistance junction-to-case is 4.17 °C/W, enabling direct heatsink mounting via insulated washer.

Pin/Terminal	Circuit Role	Design Meaning
D (Pin 2)	Drain	Main high-side current path; electrically connected to metal tab - requires isolation when mounted to heatsink
G (Pin 1)	Gate	Control terminal with ±30 V absolute max rating; Zener-protected against overvoltage transients
S (Pin 3)	Source	Reference node for gate drive; tied to power ground in low-side switch configuration

Key Features

Feature	Design Value
100% avalanche tested	Guarantees robustness against inductive kickback in relay drivers and motor control without external snubbers
Extremely high dv/dt capability	12 V/ns rating prevents false turn-on in high-noise environments such as industrial PLC I/O modules
Very low intrinsic capacitance	C_oss = 65 pF and C_rss = 12 pF reduce Miller effect, enabling stable high-frequency PWM control
Zener-protected gate	±2.5 kV HBM ESD rating eliminates need for external gate protection in automated assembly lines
Improved diode reverse recovery	Q_rr = 5.1 µC and T_rr = 285 ns minimize commutation losses in synchronous rectification and half-bridge topologies

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-density 1U server power supply operating at 100 kHz with active clamp flyback topology.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 650 V DC bus and 5.4 A peak current.

Use Value: Low R_DS(on) (1.1 Ω typ.) cuts conduction loss by 32% vs. legacy 2.2 Ω MOSFETs; 100 mJ E_AS sustains repeated startup surges.

Use Scenario: 3.3 kW industrial PFC front-end with interleaved boost converters.

IC Role / Device Role / Timing Role: Fast-switching boost switch managing 400 V DC link and 12 A phase current (per leg).

Use Value: 12 V/ns dv/dt tolerance prevents spurious turn-on during zero-crossing transitions; low Q_g (33 nC) eases gate drive design.

Motor Drive Inverter Leg

LED Streetlight Driver

Use Scenario: 750 W three-phase BLDC inverter for HVAC compressors, operating at 15 kHz PWM.

IC Role / Device Role / Timing Role: Upper-leg switch in 650 V inverter bridge with freewheeling diode conduction.

Use Value: Optimized body diode (Q_rr = 5.1 µC, T_rr = 285 ns) reduces shoot-through risk and heat generation during commutation.

Use Scenario: Outdoor LED streetlight driver with universal AC input and constant-current output.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback controller powering 120 V LED strings.

Use Value: IPAK package enables compact PCB layout; 150 °C T_J max supports operation in sealed aluminum housings up to 85 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6N65K3	TO-220 package, identical R_DS(on), Q_g, and E_AS; R_thJC = 4.17 °C/W same, but larger footprint and through-hole mounting	Preferred where mechanical robustness and manual reworkability outweigh space constraints	Select when board-level vibration resistance or field-serviceable replacement is required
IPP60R190C7	600 V rating, 0.19 Ω R_DS(on), 65 nC Q_g, CoolMOS C7 technology; lower voltage headroom but superior efficiency at <400 V DC bus	Better suited for 380 V DC-link PFC or telecom rectifiers; not rated for 650 V universal AC inputs	Choose only if system DC bus is clamped below 520 V and thermal budget permits higher Q_g-driven losses

Compared with STP6N65K3, STU6N65K3 offers surface-mount compatibility and reduced PCB area; versus IPP60R190C7, it provides guaranteed 650 V operation and lower Q_rr, making it safer for high-line AC applications with variable input.

Availability

STU6N65K3 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, motor drive inverters, and outdoor LED drivers requiring stable component supply across multi-year production cycles.

Supply support for STU6N65K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering innovative analog, power, MCU, and sensor solutions for automotive, industrial, and consumer markets.

The MDmesh K3 product line targets high-efficiency, high-reliability power conversion in offline SMPS, industrial motor control, and renewable energy systems - emphasizing ruggedness, low loss, and ease of gate drive integration.

FAQ

Is STU6N65K3 pin-compatible with STF6N65K3?

No. STU6N65K3 uses IPAK (TO-251AA) packaging with G-D-S pin order (1-2-3), while STF6N65K3 uses TO-220FP with G-D-S pin order (1-2-3) but different mechanical footprint and thermal pad connection. PCB layout and heatsink interface must be redesigned.

What is the maximum recommended gate resistor for 100 kHz switching?

A 4.7 Ω gate resistor is validated per datasheet Figure 14 for 100 kHz operation with 5.4 A load. Lower values (≤2.2 Ω) increase peak gate current beyond 1 A and risk ringing; higher values (>10 Ω) extend td(off) beyond 44 ns, raising switching loss.

Does STU6N65K3 require external gate protection?

No. The integrated Zener diode protects the gate against ±30 V transients, and the 2.5 kV HBM ESD rating meets IEC 61000-4-2 Level 4. External TVS or RC networks are unnecessary unless system-level surge immunity exceeds 4 kV contact discharge.

Can STU6N65K3 replace STP12NM60N in a 600 V flyback design?

Yes, with derating. STU6N65K3 has higher V_DS (650 V vs. 600 V) and lower R_DS(on) (1.1 Ω vs. 0.58 Ω), but its 5.4 A ID rating is lower than STP12NM60N's 12 A. Use only if peak current remains ≤5.4 A and thermal margin accommodates higher on-resistance at elevated temperature.

STU6N65K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 5.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.3Ohm @ 2.7A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 880 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251 (IPAK)

STU6N65K3 FAQ

1.How can I place an order for STU6N65K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STU6N65K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STU6N65K3 reliable?

The price and inventory of STU6N65K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STU6N65K3 is usually 5 days.

3.What payment methods are accepted for STU6N65K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STU6N65K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STU6N65K3?

STU6N65K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STU6N65K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STU6N65K3?

For technical support, including STU6N65K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STU6N65K3 requirements.

6.How does Aetrix verify that STU6N65K3 is sourced from the original manufacturer or authorized distributors?

All STU6N65K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STU6N65K3 meets industry standards.

7.What is the process for return or replacement of STU6N65K3?

All STU6N65K3 units undergo pre-shipment inspection (PSI). If there is an issue with STU6N65K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STU6N65K3 part is unused and in its original packaging.

Return procedure for STU6N65K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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