STMicroelectronics STU6N65M2

Overview

STU6N65M2 from STMicroelectronics is an N-channel 650 V, 1.2 Ω typ. (at V_GS = 10 V, I_D = 2 A), 4 A MDmesh™ M2 Power MOSFET in IPAK (TO-251) package, featuring 9.8 nC total gate charge, 12.8 pF output capacitance, and 100% avalanche tested ruggedness - deployed in high-efficiency AC-DC adapters and offline SMPS.

For engineers reviewing the STU6N65M2 datasheet, STU6N65M2 pinout, STU6N65M2 application, or STU6N65M2 equivalent, this page delivers verified electrical ratings, thermal resistance (R_thj-case = 2.08 °C/W), switching timing (t_d(off) = 6.5 ns), diode recovery (Q_rr = 1.2 µC), and package-specific mechanical data for IPAK-based layout and thermal design.

Technical Context

This device employs ST's MDmesh™ M2 strip-layout silicon with optimized vertical structure to achieve low R_DS(on) and controlled C_oss profile (12.8 pF typical), enabling high-frequency hard-switching in 65–100 kHz flyback and PFC stages. Its Zener-protected gate ensures robust ESD immunity without external clamping.

The IPAK package provides isolated drain-to-tab insulation (V_ISO = 2500 V RMS), low junction-to-case thermal resistance (2.08 °C/W), and surface-mount compatibility while maintaining TO-220-level power handling - critical for space-constrained industrial power supplies.

Key Specifications

Pinout & Package

STU6N65M2 uses the IPAK (TO-251) package: a 3-pin, single-ended, surface-mount variant with isolated metal tab (drain-connected) and no through-hole mounting. The tab is electrically connected to the drain terminal and serves as primary heat path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP6N65M2, STU6N65M2 offers identical electrical performance in a surface-mount IPAK package for automated production, while IPP60R190C6 trades ruggedness and ease of drive for lower R_DS(on) at the cost of added gate circuit complexity and reduced avalanche margin.

Availability

STU6N65M2 is available at Aetrix Electronics and suitable for high-efficiency AC-DC adapters, industrial offline SMPS, and smart meter auxiliary power supplies requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for STU6N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power transistors, sensors, and analog ICs for industrial, automotive, and consumer markets.

STU6N65M2 belongs to the MDmesh™ M2 superjunction MOSFET product line, engineered specifically for high-voltage, high-efficiency switched-mode power supplies operating from universal AC input with minimal thermal overhead.

FAQ

What is the maximum continuous drain current for STU6N65M2 at 100 °C case temperature?

The maximum continuous drain current is 2.5 A at T_C = 100 °C, as specified in Table 2 of the preliminary datasheet (DocID026776 Rev 1). This derating reflects thermal limits of the IPAK package and ensures safe operation within the 150 °C maximum junction temperature.

Does STU6N65M2 include integrated gate protection?

Yes - STU6N65M2 integrates a Zener diode between gate and source that clamps gate-source voltage to ±25 V, protecting the gate oxide from ESD and transient overvoltage events without requiring external components.

Can STU6N65M2 replace STP6N65M2 in an existing TO-220 footprint?

No - STU6N65M2 uses the IPAK (TO-251) surface-mount package with different pin spacing, pad layout, and thermal pad configuration. It is not a drop-in replacement for STP6N65M2 (TO-220); PCB redesign is required to accommodate the smaller, leadless IPAK footprint.

What is the typical reverse recovery charge (Q_rr) of the body diode at 125 °C junction temperature?

At T_j = 125 °C, Q_rr increases to 1.84 µC, as measured under ISD = 4 A, di/dt = 100 A/µs, and V_DD = 60 V (Table 8, footnote 2). This value is critical for estimating commutation loss in synchronous rectification or half-bridge configurations.