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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STU6N95K5

Name: STU6N95K5
Brand: STMicroelectronics
SKU: STU6N95K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STU6N95K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STU6N95K5.pdf

Description:: MOSFET N-CH 950V 9A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:2,563

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Product details

Overview

STU6N95K5 from STMicroelectronics is a 950 V, 9 A N-channel Power MOSFET in DPAK (TO-252) package, fabricated with MDmesh K5 vertical structure technology. It delivers 1.25 Ω max R_DS(on) at V_GS = 10 V and 3 A, 9.6 nC total gate charge, and 100% avalanche-tested ruggedness for high-voltage switching in offline SMPS and industrial inverters.

For engineers reviewing the STU6N95K5 datasheet, STU6N95K5 pinout, STU6N95K5 application, or STU6N95K5 equivalent, key selection criteria include its ultra-low Q_g/R_DS(on) figure of merit, 50 V/ns MOSFET dv/dt ruggedness, Zener-protected gate, and 90 mJ single-pulse avalanche energy - critical for flyback, PFC, and arc-resistant power stages.

Technical Context

This device implements ST's MDmesh K5 proprietary vertical superjunction architecture to minimize conduction loss while maintaining high-voltage blocking capability. Its 950 V V_(BR)DSS rating and 1.39 °C/W R_thJC enable operation in 800 V DC-link systems with forced-air or heatsink-cooled thermal management.

The integrated source-drain diode exhibits 372 ns t_rr at 150 °C and 4 µC Q_rr, supporting quasi-resonant and hard-switched topologies. Gate threshold voltage is tightly specified at 3–5 V (V_GS(th)), ensuring robust turn-on margin across temperature and drive conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	950 V - Enables direct use in 690 VAC three-phase rectified bus (≈975 VDC peak) without derating.
R_DS(on) max	1.25 Ω @ V_GS = 10 V, I_D = 3 A - Delivers ≤11.25 W conduction loss at 9 A continuous drain current.
Q_g	9.6 nC - Reduces gate driver power demand and switching transition time in 100–300 kHz SMPS designs.
E_AS	90 mJ - Supports unclamped inductive switching events without failure under 50 V clamp conditions.
dv/dt ruggedness	50 V/ns - Ensures reliable operation during fast voltage transients in high-di/dt motor drives and PFC circuits.
R_thJC	1.39 °C/W - Allows ≥64 W dissipation with 90 °C case-to-ambient ΔT using standard DPAK heatsinking.
I_D (T_C = 100 °C)	6 A - Specifies usable continuous current under real-world PCB thermal constraints, not just ideal TC = 25 °C rating.

Pinout & Package

DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; standardized 3-pin surface-mount outline compliant with JEDEC TO-252-2 variant (type A2/C3 mechanical variants).

Pin/Terminal	Circuit Role	Design Meaning
Tab (Pin 2)	Drain (D)	Primary high-voltage power path; electrically and thermally connected to PCB copper pour for heat extraction.
Pin 1	Gate (G)	High-impedance control input requiring <10 µA leakage; sensitive to ESD; routed away from noisy power traces.
Pin 3	Source (S)	Reference node for gate drive; carries full load current; must be low-inductance connection to ground/power return.

Key Features

Feature	Design Value
MDmesh K5 vertical structure	Reduces R_DS(on) × area by >30% vs. prior-generation 950 V MOSFETs, enabling smaller heatsinks in space-constrained adapters.
Zener-protected gate	Integrated ±30 V gate-source clamp prevents overvoltage damage during layout parasitic ringing or hot-swap events.
100% avalanche tested	Every unit validated for single-pulse E_AS ≥90 mJ, eliminating need for external snubbers in inductive switching applications.
Ultra-low Q_gd/Q_gs ratio	Q_gd = 4.4 nC, Q_gs = 3.2 nC - Minimizes Miller-induced shoot-through risk and improves hard-switching stability.
Low C_oss energy	19 pF Co(er) - Reduces turn-off switching loss in high-frequency resonant converters operating above 200 kHz.

Applications

Industrial Motor Drives

Server/Telecom SMPS

Use Scenario: Half-bridge IGBT gate driver auxiliary supply in 400 VDC bus inverters.

IC Role / Device Role / Timing Role: High-side N-channel switch in bootstrap-fed gate driver stage, operating at 20 kHz with 50% duty cycle.

Use Value: 950 V rating avoids series stacking; 1.25 Ω R_DS(on) limits driver loss to <1.5 W at 9 A peak, improving overall gate drive efficiency.

Use Scenario: Active clamp forward converter primary switch in 3 kW telecom rectifier.

IC Role / Device Role / Timing Role: Main power switch handling 800 VDC input, switching at 250 kHz with zero-voltage transition assistance.

Use Value: 9.6 nC Q_g enables low-loss gate driving with 1 A peak drivers; 50 V/ns dv/dt ruggedness prevents false turn-on during clamping transitions.

EV Onboard Charger (OBC)

Industrial UPS Systems

Use Scenario: Boost PFC stage in 6.6 kW bidirectional OBC interfacing 400 V battery and 230 VAC grid.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating in continuous conduction mode at 100 kHz.

Use Value: 372 ns t_rr and 4 µC Q_rr reduce body diode recovery loss by >40% vs. legacy 950 V MOSFETs, lowering thermal stress on heatsink.

Use Scenario: Static transfer switch in 10 kVA double-conversion UPS with 800 VDC intermediate bus.

IC Role / Device Role / Timing Role: High-reliability main isolation switch rated for 100,000+ operations under fault current.

Use Value: 90 mJ E_AS and 100% avalanche screening ensure fail-safe interruption of 20 kA short-circuit currents without catastrophic failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW6N95K5	Same die, TO-247-3L package; R_thJC = 0.85 °C/W; higher ID rating (12 A @ TC = 25 °C).	Requires through-hole mounting and larger heatsink footprint; suited for higher-power (>5 kW) industrial inverters.	Select when thermal budget demands <0.9 °C/W junction-to-case resistance and board space permits TO-247 layout.
FDPF8N95	950 V, 7.5 A, R_DS(on) = 1.4 Ω, Q_g = 12.5 nC; no Zener gate protection; different gate threshold (2–4 V).	Lacks integrated gate Zener and has higher switching loss; requires external gate clamp and tighter drive voltage control.	Choose only if cost sensitivity outweighs reliability requirements and design can accommodate added gate protection circuitry.

Compared with STW6N95K5, STU6N95K5 trades lower thermal resistance for surface-mount compatibility and reduced assembly cost; versus FDPF8N95, it provides superior avalanche ruggedness, lower Q_g, and built-in gate protection - critical for field-deployed industrial equipment.

Availability

STU6N95K5 is available at Aetrix Electronics and suitable for industrial motor drives, server/telecom SMPS, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STU6N95K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STU6N95K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-density offline power conversion in industrial and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STU6N95K5 supports 6 A continuous drain current when the case temperature is maintained at 100 °C, as verified in Table 1 of DS6666 Rev 6. This reflects real-world thermal limitations on PCB-mounted DPAK packages and must be used for safe SOA design rather than the 9 A rating at TC = 25 °C.

Does STU6N95K5 include integrated gate protection?

Yes - STU6N95K5 features an integrated Zener diode between gate and source, clamping V_GS to ±30 V. This is explicitly documented in the "Features" section of DS6666 and eliminates the need for external gate protection components in most high-voltage switching layouts.

How does its avalanche ruggedness compare to standard test requirements?

STU6N95K5 undergoes 100% production avalanche testing per IEC 61881, with minimum single-pulse E_AS = 90 mJ at V_DD = 50 V and I_AR = 3 A. This exceeds typical industry requirements (e.g., 50–70 mJ) and ensures robustness against unclamped inductive switching faults in PFC and motor drive stages.

Can STU6N95K5 replace STD6N95K5 in existing designs?

Yes - STU6N95K5 shares identical electrical specifications, pinout, package (DPAK), and marking (6N95K5) with STD6N95K5, as confirmed in DS6666 Rev 6 revision history. The change reflects internal ST part numbering rationalization; no design modifications or requalification are required for drop-in replacement.

STU6N95K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH5™

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 950 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.25Ohm @ 3A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 450 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251 (IPAK)

STU6N95K5 FAQ

1.How can I place an order for STU6N95K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STU6N95K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STU6N95K5 reliable?

The price and inventory of STU6N95K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STU6N95K5 is usually 5 days.

3.What payment methods are accepted for STU6N95K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STU6N95K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STU6N95K5?

STU6N95K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STU6N95K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STU6N95K5?

For technical support, including STU6N95K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STU6N95K5 requirements.

6.How does Aetrix verify that STU6N95K5 is sourced from the original manufacturer or authorized distributors?

All STU6N95K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STU6N95K5 meets industry standards.

7.What is the process for return or replacement of STU6N95K5?

All STU6N95K5 units undergo pre-shipment inspection (PSI). If there is an issue with STU6N95K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STU6N95K5 part is unused and in its original packaging.

Return procedure for STU6N95K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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