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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STU75N3LLH6-S

Name: STU75N3LLH6-S
Brand: STMicroelectronics
SKU: STU75N3LLH6-S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STU75N3LLH6-S

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STU75N3LLH6-S.pdf

Description:: MOSFET N-CH 30V 75A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STU75N3LLH6-S from STMicroelectronics is an N-channel 30 V, 75 A Power MOSFET in Short IPAK package, featuring 4.2 mΩ R_DS(on) at V_GS = 10 V and 37.5 A, high avalanche ruggedness, low gate charge (17–23.8 nC), and optimized for high-efficiency DC-DC converters and motor control in industrial power supplies.

For engineers reviewing the STU75N3LLH6-S datasheet, STU75N3LLH6-S pinout, STU75N3LLH6-S application, or STU75N3LLH6-S equivalent, key selection criteria include R_DS(on)/Q_g trade-off, thermal resistance (R_thj-case = 2.5 °C/W), safe operating area under pulsed load, and compatibility with 4.5 V logic-level gate drive in compact board space.

Technical Context

This device implements ST's 6th-generation STripFET™ VI process with DeepGATE™ architecture, delivering industry-leading R_DS(on) × Q_g figure-of-merit. Its optimized gate structure reduces switching losses while maintaining robust short-circuit withstand capability up to 10 µs at 25 °C junction temperature.

The Short IPAK package provides enhanced thermal performance over standard IPAK (R_thj-case = 2.5 °C/W) and supports surface-mount assembly with solderable drain tab. The integrated body diode exhibits t_rr = 24 ns and Q_rr = 16.8 nC under 100 A/µs di/dt, enabling efficient synchronous rectification and freewheeling in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V nominal bus systems and automotive 12 V/24 V applications.
R_DS(on)	4.2 mΩ @ V_GS = 10 V, I_D = 37.5 A - Enables <1.6 W conduction loss at 75 A continuous current with adequate heatsinking.
Q_g	17–23.8 nC - Low total gate charge allows fast switching with modest gate driver output (e.g., 1 A peak) and reduced driver power dissipation.
I_D (cont)	75 A @ T_C = 25 °C - Supports high-current loads such as BLDC motor phases or primary-side switches in high-power SMPS.
R_thj-case	2.5 °C/W - Enables 60 W power dissipation with only 150 °C junction-to-case temperature rise, critical for compact thermal design.
t_rr	24 ns - Fast body diode recovery minimizes switching loss and voltage overshoot during commutation in buck or half-bridge configurations.

Pinout & Package

STU75N3LLH6-S is housed in a Short IPAK (TO-251AA) package with three leads and an exposed drain tab (pin 2) for thermal and electrical connection. The package features gull-wing leads compatible with reflow soldering and a compact 9.0 mm × 6.2 mm footprint.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control terminal requiring ≤±20 V gate-source voltage; low input capacitance (C_iss = 1350–2030 pF) eases driver design.
2 (D / TAB)	Drain (exposed metal tab)	Primary current path and thermal interface; must be soldered to PCB copper pour or heatsink for optimal R_thj-amb and power handling.
3 (S)	Source	Reference node for gate drive and current sensing; connects to low-side return path in common-source topology.

Key Features

Feature	Design Value
R_DS(on) × Q_g benchmark	Industry-leading FoM enables >95% efficiency in 48 V–12 V buck converters at 100 kHz switching frequency.
High avalanche ruggedness	Rated for unclamped inductive switching (UIS) with guaranteed energy rating - eliminates need for external snubbers in relay drivers and solenoid controls.
Logic-level gate drive	Specified R_DS(on) down to 6.5 mΩ @ V_GS = 4.5 V - supports direct interfacing with 3.3 V/5 V microcontrollers without level-shifting.
Low gate drive power loss	Q_gs + Q_gd = 14.2–19.6 nC - reduces average gate drive power to <15 mW at 500 kHz, easing thermal management of gate drivers.

Applications

Industrial Motor Drives

Server VRMs

Use Scenario: Half-bridge phase leg in 24 V BLDC motor controller for HVAC blowers and industrial fans.

IC Role / Device Role / Timing Role: High-side and low-side switching element with fast turn-on/off (t_on ≈ 30 ns, t_off ≈ 37 ns) synchronized to PWM carrier.

Use Value: 4.2 mΩ R_DS(on) limits conduction loss to <1.2 W per FET at 50 A RMS, enabling fan operation at full speed with <30 °C case temperature rise.

Use Scenario: Synchronous rectifier in multiphase 48 V–12 V buck converter for AI accelerator cards.

IC Role / Device Role / Timing Role: Low-side switch in interleaved phase, driven by dedicated gate controller with dead-time optimization.

Use Value: 24 ns reverse recovery time and 16.8 nC Q_rr reduce shoot-through risk and crossover loss, improving conversion efficiency by 0.8% at 300 A output.

Automotive Body Control

UPS Inverters

Use Scenario: Load switch for 12 V battery-fed lighting and actuator circuits in body control modules.

IC Role / Device Role / Timing Role: Single-ended high-side or low-side power switch controlled via CAN/LIN interface MCU GPIO.

Use Value: ±20 V V_GS rating and 10 µA I_DSS at 125 °C ensure reliable operation across automotive temperature range (-40 to 150 °C).

Use Scenario: Output stage switch in 1 kVA online UPS inverter using H-bridge topology.

IC Role / Device Role / Timing Role: Hard-switched power transistor operating at 16 kHz with 75 A peak current per half-bridge leg.

Use Value: 300 A pulsed current rating and 175 °C max junction temperature support surge handling during battery backup mode without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 4.5 mΩ @ 10 V, Q_g = 26 nC, TO-251 package, no Short IPAK variant	Higher gate charge increases driver complexity; identical thermal resistance but larger outline (10.4 mm × 6.2 mm)	Prefer STU75N3LLH6-S when board space is constrained and gate drive current is limited.
IXTP75N30L2	R_DS(on) = 5.2 mΩ @ 10 V, Q_g = 22 nC, TO-220AB package, higher R_thj-case = 3.0 °C/W	Requires through-hole mounting and larger heatsink; lower avalanche energy rating	Choose STU75N3LLH6-S for surface-mount production and improved thermal performance in space-constrained designs.

Compared with IRF7470PBF and IXTP75N30L2, STU75N3LLH6-S delivers superior R_DS(on) × Q_g balance, smaller Short IPAK footprint, and lower thermal resistance-making it optimal for high-density, high-efficiency power stages where layout area and thermal headroom are critical.

Availability

STU75N3LLH6-S is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, automotive body control modules, and UPS inverters requiring stable component supply and long-term manufacturability.

Supply support for STU75N3LLH6-S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for industrial, automotive, and consumer markets.

STU75N3LLH6-S belongs to the STripFET™ VI DeepGATE™ Power MOSFET product line, engineered specifically for high-current, high-frequency switching in power conversion systems demanding ultra-low conduction and switching losses.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STU75N3LLH6-S supports 47 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the Short IPAK package and ensures safe operation within the 175 °C maximum junction temperature limit under sustained load conditions.

Does STU75N3LLH6-S require a gate resistor for EMI control?

A gate resistor (typically 4.7 Ω) is recommended to dampen ringing and limit dV/dt-induced shoot-through in bridge configurations. The device's C_iss = 1350–2030 pF and Q_g = 17–23.8 nC make it sensitive to parasitic oscillation without proper gate network tuning, especially at >200 kHz switching frequencies.

Can STU75N3LLH6-S be used in synchronous rectification without external Schottky diodes?

Yes-the integrated body diode has t_rr = 24 ns and Q_rr = 16.8 nC, enabling effective synchronous rectification in buck and LLC topologies up to 300 kHz. However, optimal performance requires precise gate timing to avoid cross-conduction, particularly when paired with high-di/dt loads.

Is the drain tab electrically isolated from the PCB ground plane?

No-the drain tab (pin 2) is internally connected to the MOSFET drain and must be electrically tied to the high-voltage node. When mounted on a PCB, it must be soldered to a dedicated copper pour referenced to the drain potential; isolation requires insulating thermal pads or ceramic substrates if galvanic separation is needed.

STU75N3LLH6-S Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VI

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.9mOhm @ 37.5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1690 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251 (IPAK)

STU75N3LLH6-S FAQ

1.How can I place an order for STU75N3LLH6-S through Aetrix?

Please submit a Request for Quotation (RFQ) for STU75N3LLH6-S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STU75N3LLH6-S reliable?

The price and inventory of STU75N3LLH6-S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STU75N3LLH6-S is usually 5 days.

3.What payment methods are accepted for STU75N3LLH6-S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STU75N3LLH6-S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STU75N3LLH6-S?

STU75N3LLH6-S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STU75N3LLH6-S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STU75N3LLH6-S?

For technical support, including STU75N3LLH6-S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STU75N3LLH6-S requirements.

6.How does Aetrix verify that STU75N3LLH6-S is sourced from the original manufacturer or authorized distributors?

All STU75N3LLH6-S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STU75N3LLH6-S meets industry standards.

7.What is the process for return or replacement of STU75N3LLH6-S?

All STU75N3LLH6-S units undergo pre-shipment inspection (PSI). If there is an issue with STU75N3LLH6-S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STU75N3LLH6-S part is unused and in its original packaging.

Return procedure for STU75N3LLH6-S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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