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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STU7LN80K5

Name: STU7LN80K5
Brand: STMicroelectronics
SKU: STU7LN80K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STU7LN80K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STU7LN80K5.pdf

Description:: MOSFET N-CH 800V 5A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:3,000

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Product details

Overview

STU7LN80K5 from STMicroelectronics is an N-channel 800 V, 0.95 Ω typ. R_DS(on), 5 A MDmesh™ K5 Power MOSFET in IPAK (TO-251) package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial inverters. It features 12 nC total gate charge, 1.47 °C/W junction-to-case thermal resistance, and built-in Zener-protected gate.

For engineers reviewing the STU7LN80K5 datasheet, STU7LN80K5 pinout, STU7LN80K5 application, or STU7LN80K5 equivalent, key selection criteria include its 800 V V_(BR)DSS, ultra-low 0.95 Ω R_DS(on) at 10 V_GS, 100% avalanche tested ruggedness, and integrated gate-source Zener diodes enabling robust ESD protection without external components.

Technical Context

This MOSFET employs ST's MDmesh™ K5 vertical superjunction technology to achieve industry-leading figure of merit (R_DS(on) × Q_g) and ultra-low output capacitance (C_oss = 22 pF). Its 50 V/ns dv/dt ruggedness and 1.5 A repetitive avalanche current support reliable operation under fast transient stress in hard-switched topologies.

The device integrates back-to-back gate-source Zener diodes rated at ±30 V breakdown, eliminating need for external clamping. Its 276 ns reverse recovery time (T_j = 25 °C) and 2.13 µC Q_rr are optimized for high-frequency flyback and resonant converters where diode recovery losses dominate efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	800 V - supports 400 V AC mains-derived DC bus with 100% safety margin
R_DS(on) max	1.15 Ω - ensures ≤5.75 W conduction loss at 5 A continuous drain current
Q_g	12 nC - enables efficient 100–300 kHz switching with low driver power demand
R_thj-case	1.47 °C/W - allows 85 W dissipation at ≤125 °C case temperature
I_AR	1.5 A - guarantees safe unclamped inductive switching up to 200 mJ single-pulse energy
C_oss	22 pF - reduces turn-off loss and improves light-load efficiency in ZVS designs
V_(BR)GSO	±30 V - provides intrinsic gate overvoltage protection without external TVS

Pinout & Package

IPAK (TO-251) package: 3-pin, single-ended leaded plastic package with exposed drain tab (pin 3) for direct heatsinking. Tab is electrically connected to drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal	Reference node for gate drive; connects to power ground or low-side return path
2 (Gate)	Control input	High-impedance MOS gate requiring <12 nC charge for full enhancement
3 (Drain / Tab)	High-voltage power output	Exposed metal tab tied to drain; must be electrically isolated from heatsink unless floating topology used

Key Features

Feature	Design Value
MDmesh™ K5 superjunction structure	Reduces R_DS(on) × area by >40% vs prior-generation 800 V MOSFETs, enabling smaller PCB footprints
Ultra-low Q_g (12 nC)	Lowers gate driver power loss and simplifies gate drive design for high-frequency operation
Zener-protected gate (±30 V)	Eliminates need for external gate clamp diodes, reducing BOM count and layout complexity
100% avalanche tested	Ensures robustness against voltage spikes during inductive load switching without derating
Low C_oss (22 pF) & Co(tr) (48 nC)	Minimizes turn-off energy loss and improves zero-voltage switching margin in resonant converters

Applications

Industrial SMPS

Server PSU PFC

Use Scenario: 1–3 kW continuous conduction mode (CCM) boost PFC stage in telecom/server power supplies.

IC Role / Device Role / Timing Role: Main switching device handling 5 A RMS input current at 800 V blocking voltage.

Use Value: 0.95 Ω R_DS(on) and 12 nC Q_g reduce conduction + switching losses, enabling >96% efficiency at full load.

Use Scenario: High-density 80+ Titanium certified front-end converter operating at 100–200 kHz.

IC Role / Device Role / Timing Role: Fast-switching high-voltage switch in interleaved boost configuration.

Use Value: 276 ns t_rr and 2.13 µC Q_rr minimize body diode losses during dead-time commutation.

AC-DC Adapters

Motor Drive Inverters

Use Scenario: 65–120 W quasi-resonant flyback adapter for industrial control panels.

IC Role / Device Role / Timing Role: Primary-side switch managing 800 V peak drain voltage during demagnetization.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during high-slew transients in QR operation.

Use Scenario: 3-phase IGBT/MOSFET gate driver auxiliary supply in HVAC inverter drives.

IC Role / Device Role / Timing Role: High-side bootstrap switch supplying isolated gate drive power.

Use Value: Integrated ±30 V gate Zener withstands boot node overshoot without external clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW12N80K5	Same MDmesh™ K5 process, but 12 A rating, TO-247 package, higher R_DS(on) (0.62 Ω typ.)	Higher current capacity suits >5 A continuous loads; larger footprint and thermal mass	Select when system requires ≥10 A ID and board space permits TO-247 mounting
FDPF7N80Z	800 V, 0.98 Ω R_DS(on), 7 A, TO-220FP package; no integrated gate Zener	Lacks built-in gate protection; requires external 18 V TVS; lower Q_g (9.5 nC)	Choose if gate drive circuit already includes clamping and lower gate charge outweighs Zener omission

Compared with STW12N80K5 and FDPF7N80Z, the STU7LN80K5 uniquely balances compact IPAK packaging, integrated gate protection, and optimal R_DS(on)/Q_g trade-off for space-constrained 5 A high-voltage switch applications.

Availability

STU7LN80K5 is available at Aetrix Electronics and suitable for industrial SMPS, server PSU PFC stages, and AC-DC adapters requiring stable component supply and long-term production continuity.

Supply support for STU7LN80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The MDmesh™ K5 product line targets high-efficiency, high-voltage power conversion systems-specifically engineered to replace older superjunction MOSFETs with superior R_DS(on) × Q_g performance in 600–900 V applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STU7LN80K5 supports 3.4 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the IPAK package and ensures safe operation within its 1.47 °C/W R_thj-case and 85 W P_TOT rating at 25 °C case temperature.

Does the STU7LN80K5 require external gate protection?

No. The device integrates bidirectional gate-source Zener diodes with ±30 V breakdown voltage (V_(BR)GSO), providing inherent protection against gate overvoltage transients. External clamping components are unnecessary unless system-level ESD or surge requirements exceed the device's built-in capability.

Can STU7LN80K5 be used in avalanche-mode operation?

Yes. It is 100% factory-tested for repetitive avalanche capability with I_AR = 1.5 A and E_AS = 200 mJ (single pulse, T_j = 25 °C). Operation in unclamped inductive switching requires adherence to SOA limits and thermal management to avoid junction overheating during repeated events.

What is the recommended gate resistor value for 100 kHz switching?

A 4.7 Ω gate resistor is validated in the datasheet (Table 7 test conditions) for 100–200 kHz operation, balancing switching speed (t_d(on) = 9.3 ns, t_f = 17.4 ns) and gate drive stability. Lower values increase dV/dt stress; higher values reduce EMI but raise switching losses-optimize based on measured waveforms and thermal constraints.

STU7LN80K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.15Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 270 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 85W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251 (IPAK)

STU7LN80K5 FAQ

1.How can I place an order for STU7LN80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STU7LN80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STU7LN80K5 reliable?

The price and inventory of STU7LN80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STU7LN80K5 is usually 5 days.

3.What payment methods are accepted for STU7LN80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STU7LN80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STU7LN80K5?

STU7LN80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STU7LN80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STU7LN80K5?

For technical support, including STU7LN80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STU7LN80K5 requirements.

6.How does Aetrix verify that STU7LN80K5 is sourced from the original manufacturer or authorized distributors?

All STU7LN80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STU7LN80K5 meets industry standards.

7.What is the process for return or replacement of STU7LN80K5?

All STU7LN80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STU7LN80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STU7LN80K5 part is unused and in its original packaging.

Return procedure for STU7LN80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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