STMicroelectronics STU7N60M2

Overview

STU7N60M2 from STMicroelectronics is an N-channel 600 V, 0.86 Ω typ. (0.95 Ω max.), 5 A MDmesh™ M2 Power MOSFET in IPAK (TO-251) package, featuring 8.8 nC total gate charge, 15.7 pF output capacitance, and 100% avalanche tested ruggedness. It serves as a high-efficiency primary-side switch in offline SMPS, PFC stages, and industrial DC-DC converters.

For engineers reviewing the STU7N60M2 datasheet, STU7N60M2 pinout, STU7N60M2 application, or STU7N60M2 equivalent, key selection criteria include its 50 V/ns MOSFET dv/dt ruggedness, 99 mJ single-pulse avalanche energy, Zener-protected gate, and optimized COSS profile for hard-switched flyback and resonant topologies.

Technical Context

This device employs ST's MDmesh™ M2 strip layout and enhanced vertical structure to achieve low RDS(on) while maintaining fast switching with minimal Qgd (4.3 nC) and low Crss (0.68 pF). Its 15.7 pF Coss at 100 V enables reduced turn-off losses in high-frequency converters.

The integrated source-drain diode exhibits 1.6 V forward voltage at 5 A and 275 ns trr at 150 °C, supporting synchronous rectification replacement and quasi-resonant operation. Thermal resistance junction-case is 2.08 °C/W in IPAK, enabling 60 W dissipation at Tcase = 25 °C.

Key Specifications

Pinout & Package

IPAK (TO-251) package with exposed drain tab (D), standard 3-pin through-hole footprint. Tab is electrically connected to drain and serves as primary heat path to PCB copper pour.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 600 V Power MOSFET applications.

Compared with STU7N60M2, STP7N60M2 offers identical electrical performance in a more serviceable package but consumes 3× more board area; FDPF5N60NZ trades ruggedness and gate protection for marginally lower cost, increasing design validation effort for industrial-grade reliability.

Availability

STU7N60M2 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server/telecom PSU primary switches, and LED driver PFC stages requiring stable component supply and long-term lifecycle support.

Supply support for STU7N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STU7N60M2 belongs to the MDmesh™ M2 Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline SMPS and industrial power conversion where low R_DS(on), fast switching, and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current for STU7N60M2 at 100 °C case temperature?

The maximum continuous drain current is 3.5 A at T_case = 100 °C, as specified in Table 1 of DS9653 Rev 2. This value is limited by junction temperature (T_j ≤ 150 °C) and thermal resistance (R_thj-case = 2.08 °C/W), not by package current-carrying capacity. Derating follows the linear curve shown in Figure 2 (Safe Operating Area).

Does STU7N60M2 have an integrated body diode, and what are its key recovery parameters?

Yes, STU7N60M2 includes an integral source-drain diode rated for 5 A continuous and 20 A pulsed current. At T_j = 25 °C, it exhibits 1.6 V forward voltage at 5 A, 275 ns reverse recovery time (trr), and 1.55 µC reverse recovery charge (Qrr); at 150 °C, trr increases to 376 ns and Qrr to 2.1 µC, per Table 7.

Can STU7N60M2 be used in place of STP7N60M2 without circuit modification?

No - although electrically identical, STU7N60M2 uses IPAK (TO-251) with gull-wing leads and a smaller footprint, while STP7N60M2 uses TO-220 with through-hole pins and different thermal pad layout. PCB land patterns, mounting hardware, and heatsink interface are incompatible; redesign is required for direct substitution.

What is the significance of the "M2" suffix in STU7N60M2?

The "M2" denotes ST's second-generation MDmesh™ technology, featuring refined trench geometry and optimized epitaxial layer doping to reduce specific on-resistance (R_DS(on) × area) by ~20% versus M1, while improving C_oss/Q_g ratio and avalanche energy capability - confirmed by comparative data in ST's MDmesh™ M2 white papers and DS9653 characterization curves.