STMicroelectronics STU7N65M2

Overview

STU7N65M2 from STMicroelectronics is an N-channel 650 V, 1.15 Ω (max), 5 A MDmesh™ M2 Power MOSFET in IPAK (TO-251) package, optimized for high-efficiency flyback and PFC converters in industrial SMPS and LED drivers. It features 9 nC total gate charge, 14.5 pF output capacitance, and 100% avalanche tested ruggedness.

For engineers reviewing the STU7N65M2 datasheet, STU7N65M2 pinout, STU7N65M2 application, or STU7N65M2 equivalent, key selection criteria include R_DS(on) stability over temperature, C_oss profile at high V_DS, diode reverse recovery performance (Q_rr = 1.62 µC), and thermal resistance (R_thj-case = 2.08 °C/W).

Technical Context

This device employs ST's MDmesh™ M2 strip-based vertical structure to simultaneously minimize conduction loss and switching loss. Its low C_oss (14.5 pF typ.) and optimized C_oss vs. V_DS curve reduce turn-off energy, while Zener-protected gate enables robust ESD immunity (±25 V rating).

The integrated body diode exhibits fast reverse recovery (t_rr = 275 ns, Q_rr = 1.62 µC at T_j = 25°C) and low forward voltage (V_SD = 1.6 V at I_SD = 5 A), supporting quasi-resonant and hard-switched topologies without external snubbing.

Key Specifications

Pinout & Package

STU7N65M2 is housed in IPAK (TO-251) package with gull-wing leads, featuring isolated tab (drain-connected) for simplified heatsinking and PCB mounting. The package complies with ECOPACK® environmental standards and supports surface-mount assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP65R190C7, STU7N65M2 trades 92% higher R_DS(on) for 59% lower Q_g and 46% lower C_oss, making it superior in high-frequency, thermally constrained designs; versus STP7N65M2, it delivers identical performance in a surface-mount package enabling higher board density and reflow compatibility.

Availability

STU7N65M2 is available at Aetrix Electronics and suitable for industrial SMPS, LED driver power stages, server PSU front-ends, and industrial motor starters requiring stable component supply and long-term manufacturability.

Supply support for STU7N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The MDmesh™ M2 product line targets high-efficiency AC-DC and DC-DC conversion, emphasizing low R_DS(on) × Q_g trade-offs and rugged avalanche capability for mission-critical power infrastructure.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The STU7N65M2 supports 3.2 A continuous drain current at T_C = 100°C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the IPAK package and ensures safe operation within SOA boundaries when mounted on a 25 cm² copper heatsink with 10 LFM airflow.

Does the integrated body diode require external anti-parallel diode supplementation?

No - the STU7N65M2's source-drain diode is fully rated for 5 A continuous and 20 A pulsed operation, with characterized t_rr (275 ns) and Q_rr (1.62 µC). It is qualified for use in synchronous rectification and freewheeling roles without supplemental diodes in designs operating ≤200 kHz.

How does the IPAK package compare thermally to TO-220 for this device?

Both STU7N65M2 (IPAK) and STP7N65M2 (TO-220) share identical R_thj-case = 2.08 °C/W per Table 3, meaning junction-to-heatsink thermal performance is equivalent. However, IPAK's surface-mount construction reduces thermal interface resistance in reflow-soldered assemblies, yielding up to 8°C lower steady-state T_j under identical PCB layout and heatsink conditions.

Is gate resistive damping required for reliable switching?

A 4.7 Ω gate resistor is recommended (per Figure 16 test circuit) to limit peak gate current and damp parasitic oscillation. Lower values (<2.2 Ω) risk overshoot and ringing due to PCB trace inductance interacting with Q_g = 9 nC; higher values (>10 Ω) increase switching time and associated losses without improving reliability.