STMicroelectronics STU7N80K5

Overview

STU7N80K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET based on MDmesh K5 technology, rated for 800 V V_DS, 0.95 Ω typical R_DS(on) at V_GS = 10 V and I_D = 3 A, with 13.4 nC total gate charge and 100% avalanche tested. It delivers ultra-low gate charge and industry-leading figure of merit (FoM) in switching power supplies and PFC stages.

For engineers reviewing the STU7N80K5 datasheet, STU7N80K5 pinout, STU7N80K5 application, or STU7N80K5 equivalent, key selection criteria include its 800 V breakdown voltage, 1.14 °C/W junction-to-case thermal resistance, Zener-protected gate, and DPAK (TO-252) package suitability for high-density industrial SMPS designs.

Technical Context

This device employs ST's proprietary MDmesh K5 vertical structure to reduce specific on-resistance and output capacitance while maintaining rugged dv/dt performance (50 V/ns MOSFET ruggedness). Its optimized charge distribution enables fast switching with low E_oss (2 µJ at 600 V) and controlled reverse recovery (Q_rr = 2.8 µC).

The integrated body diode features 315 ns reverse recovery time at T_J = 25 °C and 6 A, with 17.5 A peak reverse recovery current - enabling reliable operation in hard-switched and resonant topologies without external snubbers.

Key Specifications

Pinout & Package

DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; 3-terminal configuration optimized for surface-mount high-power density layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP7N80K5, STU7N80K5 offers superior thermal performance and smaller footprint; versus IPP60R099C7, it trades higher R_DS(on) for guaranteed 800 V operation, built-in gate protection, and proven avalanche ruggedness - critical for field-reliable industrial power conversion.

Availability

STU7N80K5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, telecom rectifier modules, server PSU front-end PFC, and EV charger auxiliary power supplies requiring stable component supply and long-term lifecycle support.

Supply support for STU7N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh K5 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion where 800 V blocking capability, low FoM, and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STU7N80K5 supports 3.8 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 1 of DS9173 Rev 8. This value reflects real thermal limits under PCB-mounted conditions and must be used - not the 6 A rating at 25 °C - for thermal design validation.

Does STU7N80K5 include integrated gate protection?

Yes, the STU7N80K5 integrates a Zener diode between gate and source, providing ±30 V gate-source voltage clamping. This eliminates the need for external gate protection components in most industrial applications and guards against ESD and transient overvoltage during board handling or system operation.

Can STU7N80K5 replace STD7N80K5 in existing designs?

No - STU7N80K5 and STD7N80K5 share identical electrical specifications and DPAK packaging but differ in tape-and-reel orientation and reel quantity (STD7N80K5: 2500 pcs/reel; STU7N80K5: separate datasheet per Rev 8, confirmed distinct ordering and traceability). They are not interchangeable without verifying reel logistics and qualification status.

What is the safe operating area (SOA) limitation at 100 µs pulse width?

At 100 µs pulse width and T_C = 25 °C, the SOA curve (Figure 1, DS9173 Rev 8) limits drain current to approximately 4.5 A at 400 V V_DS. This boundary is defined by R_DS(on) heating and must be respected in peak-current applications like inrush limiting or short-circuit protection circuits.