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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STU7NF25

Name: STU7NF25
Brand: STMicroelectronics
SKU: STU7NF25
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STU7NF25

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STU7NF25.pdf

Description:: MOSFET N-CH 250V 8A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:5,526

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Product details

Overview

STU7NF25 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in IPAK (TO-251) package, rated for 250 V drain-source voltage, 0.29 Ω typical R_DS(on) at V_GS = 10 V and I_D = 4 A, 8 A continuous drain current at T_C = 25 °C, and 100% avalanche tested to 110 mJ single-pulse energy. It serves as a primary switch in isolated DC-DC converters for telecom and computing power supplies.

For engineers reviewing the STU7NF25 datasheet, STU7NF25 pinout, STU7NF25 application, or STU7NF25 equivalent, key selection criteria include its low gate charge (16 nC), fast switching (t_d(on) = 13 ns, t_f = 6 ns), 175 °C maximum junction temperature, and robust unclamped inductive switching capability - all critical for high-efficiency, space-constrained SMPS designs.

Technical Context

This device employs ST's STripFET™ II process to minimize input capacitance (C_iss = 500 pF) and gate charge, enabling efficient operation with low-drive-strength controllers. Its optimized R_DS(on)-Q_g figure of merit supports high-frequency PWM in flyback and forward converters.

The integrated body diode exhibits 115 ns reverse recovery time (T_J = 25 °C) and 470 nC Q_rr, making it suitable for synchronous rectification and freewheeling roles where diode recovery loss must be controlled. Thermal resistance junction-to-case is 2.08 °C/W, supporting direct heatsink mounting via the exposed TAB.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - Withstands DC bus voltages up to 250 V in offline or intermediate bus applications without breakdown.
R_DS(on) typ.	0.29 Ω at V_GS = 10 V, I_D = 4 A - Enables <1.2 W conduction loss at 4 A, reducing thermal load in compact power stages.
Q_g	16 nC - Low total gate charge allows fast turn-on with modest drive current, minimizing switching loss at >100 kHz.
E_AS	110 mJ (T_J = 25 °C) - Confirmed unclamped inductive energy handling supports robustness in hard-switched topologies.
T_J max	175 °C - Supports operation in high-ambient industrial or telecom environments with derated power dissipation.
C_iss	500 pF - Low input capacitance reduces Miller effect and eases gate driver design for stable high-speed switching.
t_f	6 ns - Fast fall time limits overlap loss during hard switching, improving efficiency in fixed-frequency converters.

Pinout & Package

IPAK (TO-251) package with three leads and an exposed metal TAB serving as the drain terminal. The package enables low thermal resistance (R_thj-case = 2.08 °C/W) and mechanical compatibility with TO-220 footprint layouts using minimal board area.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal	Low-side reference node; connects to power ground or output return path in buck/flyback configurations.
2 (Gate)	Control input	High-impedance MOSFET gate requiring <16 nC charge for full enhancement; sensitive to ESD and ringing.
3 (Drain)	Power input/output node	Connected to high-voltage rail or transformer primary; electrically tied to exposed TAB for heatsinking.
TAB	Drain (internally connected)	Primary thermal path to heatsink; must be electrically isolated from other circuit nodes unless drain-referenced cooling is used.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees minimum 110 mJ single-pulse energy rating under unclamped inductive conditions, eliminating need for external snubbers in many flyback designs.
STripFET™ II process	Delivers 30% lower R_DS(on) × Q_g than prior-generation MOSFETs, directly enabling higher efficiency at 200–500 kHz switching frequencies.
175 °C maximum junction temperature	Permits sustained operation in sealed enclosures or high-ambient telecom equipment without forced air cooling.
Low C_oss (90 pF)	Reduces capacitive turn-off loss and improves light-load efficiency in resonant and quasi-resonant topologies.

Applications

Telecom DC-DC Converters

Industrial AC-DC Adapters

Use Scenario: Primary-side switch in 48 V input, 12 V/20 W isolated flyback converter for base station power modules.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer across transformer; operates at 250 kHz with 50% duty cycle.

Use Value: 0.29 Ω R_DS(on) and 16 nC Q_g reduce combined conduction and switching losses to <1.8 W, enabling >89% efficiency at full load without heatsink.

Use Scenario: Main switch in universal-input (85–265 VAC), 24 V/15 W open-frame AC-DC adapter for factory automation sensors.

IC Role / Device Role / Timing Role: Active clamp flyback switch handling 250 V DC link; driven by UC3844-based controller with 65 kHz fixed frequency.

Use Value: 175 °C T_Jmax and 2.08 °C/W R_thj-case allow reliable operation at 70 °C ambient with natural convection cooling.

Server PSU Hold-Up Circuits

LED Driver Primary Switch

Use Scenario: Secondary-side synchronous rectifier replacement in 12 V hold-up stage of redundant server power supply.

IC Role / Device Role / Timing Role: Low-side switch clamping output rail during AC dropout; conducts 8 A continuously for 15 ms.

Use Value: 8 A I_D rating and 115 ns t_rr body diode enable fast recovery and low forward drop (V_SD = 1.5 V), minimizing hold-up capacitor size.

Use Scenario: Primary switch in constant-current LED driver for street lighting (230 VAC input, 36 V/1.5 A output).

IC Role / Device Role / Timing Role: High-side switch in buck-boost topology operating at 100 kHz with variable duty cycle for dimming control.

Use Value: Avalanche ruggedness (110 mJ) tolerates inductive kickback from long LED strings, eliminating need for external TVS protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NF25	Same die, TO-220 package; R_thj-case = 2.5 °C/W vs. 2.08 °C/W; identical electrical specs.	Requires larger PCB footprint and standard TO-220 heatsink; less suitable for ultra-compact designs.	Select when mechanical compatibility with legacy TO-220 layouts is required and thermal margin exceeds 0.4 °C/W.
FQP7N25	Higher R_DS(on) max = 0.48 Ω; Q_g = 22 nC; no 100% avalanche test data published.	Limited to lower-power (<12 W) or lower-frequency (<65 kHz) applications due to higher conduction and switching losses.	Acceptable only if cost sensitivity outweighs efficiency and ruggedness requirements in non-critical consumer adapters.

Compared with STP7NF25 and FQP7N25, the STU7NF25 delivers superior thermal performance in minimal area and verified avalanche robustness - critical for telecom-grade reliability and high-density power supply miniaturization.

Availability

STU7NF25 is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial AC-DC adapters, and LED driver primary switches requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for STU7NF25 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The STU7NF25 belongs to ST's STripFET™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in isolated power conversion systems where low gate charge and avalanche ruggedness are mandatory.

FAQ

What is the maximum safe operating voltage for STU7NF25 in continuous DC applications?

The absolute maximum drain-source voltage (V_DS) is 250 V, and operation at this rating requires strict adherence to SOA limits - particularly pulse width and case temperature constraints. For reliable long-term use, design margins should limit steady-state V_DS to ≤200 V, especially when ambient temperature exceeds 60 °C or heatsinking is limited.

Can STU7NF25 replace STP7NF25 without PCB layout changes?

No - STU7NF25 uses IPAK (TO-251) packaging with 2.54 mm lead pitch and surface-mount footprint, while STP7NF25 uses through-hole TO-220 with 5.08 mm spacing and vertical mounting. Direct substitution requires PCB redesign, though both share identical die characteristics and thermal interface requirements for heatsink attachment.

Is the body diode suitable for synchronous rectification in a 100 kHz flyback converter?

Yes - the body diode has t_rr = 115 ns and Q_rr = 470 nC at T_J = 25 °C, enabling usable performance up to 150 kHz in discontinuous conduction mode. However, for optimal efficiency above 80 kHz, external Schottky or MOSFET synchronous rectifiers are recommended to avoid diode conduction loss and recovery spikes.

Does STU7NF25 require gate resistors for stability in hard-switched applications?

Yes - a series gate resistor (typically 4.7–10 Ω) is required to dampen parasitic oscillation caused by gate-drain capacitance (Crss = 15 pF) interacting with PCB trace inductance. Omitting it risks shoot-through, excessive EMI, and premature gate oxide failure, especially when driven by low-impedance controllers like UC384x or TL494 derivatives.

STU7NF25 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 420mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 72W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251 (IPAK)

STU7NF25 FAQ

1.How can I place an order for STU7NF25 through Aetrix?

Please submit a Request for Quotation (RFQ) for STU7NF25 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STU7NF25 reliable?

The price and inventory of STU7NF25 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STU7NF25 is usually 5 days.

3.What payment methods are accepted for STU7NF25?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STU7NF25 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STU7NF25?

STU7NF25 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STU7NF25 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STU7NF25?

For technical support, including STU7NF25 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STU7NF25 requirements.

6.How does Aetrix verify that STU7NF25 is sourced from the original manufacturer or authorized distributors?

All STU7NF25 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STU7NF25 meets industry standards.

7.What is the process for return or replacement of STU7NF25?

All STU7NF25 units undergo pre-shipment inspection (PSI). If there is an issue with STU7NF25, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STU7NF25 part is unused and in its original packaging.

Return procedure for STU7NF25:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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