STMicroelectronics STU7NM60N

Overview

STU7NM60N from STMicroelectronics is an N-channel 600 V, 5 A Power MOSFET in IPAK (TO-251) package, built on MDmesh™ II technology. It delivers 800 mΩ typical R_DS(on), 14 nC total gate charge, and 100% avalanche-tested ruggedness-optimized for high-efficiency flyback, PFC, and SMPS primary-side switching at up to 150 °C junction temperature.

For engineers reviewing the STU7NM60N datasheet, STU7NM60N pinout, STU7NM60N application, or STU7NM60N equivalent, key selection criteria include its low C_iss (363 pF), fast switching (t_d(off) = 26 ns), integrated body diode with 213 ns t_rr, and thermal resistance R_thJC = 2.78 °C/W for reliable conduction in compact power stages.

Technical Context

This device employs ST's second-generation MDmesh vertical strip architecture to minimize both conduction loss (R_DS(on)) and switching loss (Q_g, C_oss). Its gate threshold voltage (2–4 V) ensures robust TTL/CMOS drive compatibility while maintaining noise immunity under high dv/dt conditions (15 V/ns).

The integrated source-drain diode supports synchronous rectification and snubberless operation in inductive loads, with characterized reverse recovery (Q_rr = 1.5 µC at 25 °C, 1.8 µC at 150 °C) and peak I_RRM of 14 A-enabling predictable EMI behavior in hard-switched topologies.

Key Specifications

Pinout & Package

IPAK (TO-251) type C package: 3-pin single-ended leaded outline with exposed drain tab for thermal and electrical connection. Tab is electrically connected to drain (D). Standard JEDEC-compliant footprint with 2.25 mm pitch and 9.3 mm body length.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 600 V Power MOSFET applications.

Compared with STP7NM60N and FQP7N60C, STU7NM60N provides superior gate charge efficiency and certified avalanche ruggedness in a compact IPAK package-making it optimal for space-limited, high-reliability SMPS where thermal and EMI constraints dominate.

Availability

STU7NM60N is available at Aetrix Electronics and suitable for AC-DC adapters, industrial LED drivers, automotive HVAC systems, and smart home appliance motor drives requiring stable component supply, long-term lifecycle support, and consistent parametric performance across manufacturing lots.

Supply support for STU7NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STU7NM60N belongs to the MDmesh™ II Power MOSFET product line-engineered specifically for high-efficiency, high-voltage switching in offline power supplies, PFC stages, and motor control inverters where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STU7NM60N supports 3 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS6523 Rev 6. This derating reflects thermal limitations of the IPAK package; operation above this current requires forced-air cooling or reduced duty cycle to maintain T_J ≤ 150 °C.

Does STU7NM60N require a gate resistor for safe operation?

Yes-a gate resistor between 5 Ω and 22 Ω is recommended to dampen ringing and control dV/dt during switching. The device's intrinsic gate resistance is 5.4 Ω, so external series resistance ensures stable turn-on/turn-off timing and prevents shoot-through in half-bridge configurations.

Can STU7NM60N replace STP7NM60N in existing TO-220 layouts?

No-STU7NM60N uses IPAK (TO-251) packaging with different pinout (G-D-S vs TO-220's G-D-S but non-interchangeable land pattern), thermal pad layout, and mechanical mounting. Direct replacement requires PCB redesign; however, electrical parameters are closely matched for functional validation.

Is the body diode suitable for synchronous rectification in LLC resonant converters?

Yes-the body diode has characterized t_rr = 213 ns and Q_rr = 1.5 µC at 25 °C, enabling use in synchronous rectification where precise timing and low reverse recovery loss are required. At 150 °C, Q_rr rises to 1.8 µC, so gate timing must be adjusted to avoid cross-conduction.