STMicroelectronics STU80N4F6

Overview

STU80N4F6 from STMicroelectronics is an N-channel 40 V Power MOSFET in IPAK (TO-251) package, featuring 5.8 mΩ typ. R_DS(on) at V_GS = 10 V, 80 A continuous drain current at T_C = 25 °C, and high avalanche ruggedness (E_AS = 149 mJ). It serves as a high-efficiency main switch in DC-DC converters, motor drives, and power supplies.

For engineers reviewing the STU80N4F6 datasheet, STU80N4F6 pinout, STU80N4F6 application, or STU80N4F6 equivalent, key selection criteria include low gate charge (36 nC), thermal resistance junction-to-case (2.14 °C/W), unclamped inductive switching capability, and robust source-drain diode recovery (t_rr = 41.1 ns, Q_rr = 43.6 nC).

Technical Context

This device implements ST's 6th-generation STripFET™ VI DeepGATE™ technology with an optimized gate structure to minimize R_DS(on) and gate charge simultaneously. Its design targets high-current, high-frequency switching where conduction loss and switching loss trade-offs are critical.

The MOSFET supports repetitive and non-repetitive avalanche operation up to 40 A, with a maximum junction temperature of 175 °C and safe operating area validated for pulse widths down to 100 µs. The integrated body diode exhibits fast reverse recovery (t_rr = 41.1 ns) and low forward voltage (V_SD = 1.3 V at I_SD = 40 A).

Key Specifications

Pinout & Package

IPAK (TO-251) package: 3-pin through-hole outline with exposed drain tab (pin 3/TAB) for thermal and electrical connection. Mounting requires mechanical fixation and thermal interface to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF840PBF and STP80NF55-08, STU80N4F6 delivers superior current density (80 A in IPAK), lowest R_DS(on) per unit footprint, and optimized gate charge for high-frequency hard-switching-making it the preferred choice for compact, high-efficiency 40 V power stages.

Availability

STU80N4F6 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and power distribution units requiring stable component supply and long-term production continuity.

Supply support for STU80N4F6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STripFET™ VI DeepGATE™ product line targets high-efficiency power conversion, emphasizing ultra-low R_DS(on), fast switching, and ruggedness in compact packages for next-generation power systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STU80N4F6 supports 56 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits imposed by the IPAK package's R_thj-case of 2.14 °C/W and maximum junction temperature of 175 °C. Designers must ensure heatsink thermal resistance maintains T_C ≤ 100 °C under full-load conditions.

Is the STU80N4F6 suitable for synchronous rectification in a 40 V buck converter?

Yes-the device's low R_DS(on) (5.8 mΩ), fast body diode (t_rr = 41.1 ns), and low Q_gd/Q_gs ratio support efficient synchronous rectification up to 300 kHz. Its V_GS(th) range (2–4 V) allows reliable gate control using standard 5 V or 12 V drivers without risk of spurious turn-on.

Does the IPAK package require special PCB layout considerations?

Yes-the exposed drain tab (pin 3/TAB) must be soldered to a large copper pour connected to the drain net and thermally coupled to a heatsink. Minimum recommended pad size is 10 mm × 10 mm with ≥4 thermal vias (0.3 mm diameter, 0.8 mm pitch) to inner ground/power planes. Keep gate traces short and shielded from drain noise to prevent oscillation.

How does the STU80N4F6 perform under unclamped inductive switching stress?

The device is rated for 40 A repetitive avalanche current and 149 mJ single-pulse avalanche energy (E_AS) at T_j = 25 °C. Test circuit Figure 16 confirms robustness under UIS conditions with L = 100 µH, I_D = 40 A, and V_DD = 25 V. Performance degrades above T_j = 125 °C, so thermal design must maintain junction temperature within limits during transient events.