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STMicroelectronics STU8NM50N
- Part No.:
- STU8NM50N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
STU8NM50N.pdf
- Description:
- MOSFET N-CH 500V 5A IPAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,814
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Product details
Overview
STU8NM50N from STMicroelectronics is an N-channel 500 V, 0.73 Ω typ., 5 A MDmesh™II Power MOSFET in IPAK (TO-251) package, designed for high-efficiency switching converters operating up to 150 °C junction temperature, with 100% avalanche tested ruggedness and low gate charge (14 nC) enabling fast switching in SMPS and PFC stages.
For engineers reviewing the STU8NM50N datasheet, STU8NM50N pinout, STU8NM50N application, or STU8NM50N equivalent, this device is selected for high-voltage DC-DC conversion where low RDS(on), controlled dv/dt (15 V/ns), and robust unclamped inductive switching capability are critical design requirements.
Technical Context
This MOSFET employs ST's second-generation MDmesh™ vertical strip architecture, delivering ultra-low on-resistance and gate charge while maintaining 500 V blocking capability. Its 147.5 pF Coss(eq) and 5.4 Ω intrinsic gate resistance support optimized snubberless operation in hard-switched topologies.
The device features a fully rated source-drain diode with 187 ns reverse recovery time and 1.3 µC Qrr at 25 °C, enabling efficient synchronous rectification replacement in flyback and LLC resonant converters without external freewheeling diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 500 V - Sustains full mains-derived DC bus voltages (e.g., 375–400 V PFC output) with margin. |
| RDS(on) max | 0.79 Ω @ TC = 25 °C - Enables <5 W conduction loss at 5 A continuous drain current. |
| Qg | 14 nC - Reduces gate drive power and enables use of low-current drivers (e.g., 100 mA peak). |
| EAS | 140 mJ - Supports reliable unclamped inductive switching in flyback and forward converters. |
| Tj max | 150 °C - Allows operation in thermally constrained industrial enclosures without derating below 3 A at 100 °C case. |
| Ciss | 364 pF - Limits high-frequency oscillation risk during turn-on when paired with standard 4.7 Ω gate resistors. |
| dv/dt rating | 15 V/ns - Ensures immunity to parasitic turn-on in high-noise bridge-leg configurations. |
Pinout & Package
STU8NM50N is housed in an IPAK (TO-251) surface-mount package with three terminals: Gate (G), Drain (D), and Source (S). The exposed drain tab provides thermal path to PCB copper and must be soldered to a thermal pad per Figure 24 in Doc ID 17413 Rev 6.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives 10 V logic-level gate drive; 5.4 Ω internal gate resistance limits ringing without external damping. |
| 2 (Drain) | High-side switch node | Connected to primary-side high-voltage rail; tab is electrically tied to Drain and requires isolation from ground plane. |
| 3 (Source) | Return path / reference | Serves as local ground reference for gate driver; routed to power ground with minimal inductance to suppress shoot-through. |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™II vertical structure | Delivers 0.73 Ω RDS(on) at 500 V - among lowest in class for IPAK-packaged 5 A devices. |
| 100% avalanche tested | Guarantees single-pulse EAS ≥ 140 mJ - eliminates need for external clamping in cost-sensitive flyback designs. |
| Low Coss(eq) | 147.5 pF - reduces capacitive turn-off losses and improves light-load efficiency in quasi-resonant converters. |
| Fast diode recovery | trr = 187 ns, Qrr = 1.3 µC - minimizes cross-conduction loss when used as synchronous rectifier in secondary-side switching. |
| ECOPACK® compliant | Meets RoHS and halogen-free requirements - suitable for consumer and industrial products requiring environmental certification. |
Applications
| AC-DC Adapter | Industrial SMPS |
|---|---|
Use Scenario: 65 W universal-input offline flyback converter for laptop adapters. IC Role / Device Role / Timing Role: Primary-side high-side switch controlling energy transfer into transformer. Use Value: Low Qg (14 nC) and 15 V/ns dv/dt rating prevent false triggering during line transients, improving no-load standby compliance. |
Use Scenario: 200 W telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: Main switching FET in primary power stage handling 400 V DC bus. Use Value: 140 mJ EAS withstands repeated unclamped inductive spikes during soft-start, eliminating snubber losses. |
| PFC Boost Converter | LED Driver |
Use Scenario: 150 W continuous conduction mode (CCM) boost PFC front-end. IC Role / Device Role / Timing Role: High-voltage switch in boost leg operating at 65–100 kHz. Use Value: 0.73 Ω RDS(on) limits conduction loss to <1.9 W at full load, supporting >96% efficiency targets. |
Use Scenario: Isolated 40 W constant-current LED driver for street lighting. IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback regulating output current. Use Value: Fast trr (187 ns) and low Qrr reduce switching loss during zero-voltage switching transitions, extending MOSFET lifetime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 500 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP8NM50N | Same die, TO-220 package - higher Rthj-case (2.78 °C/W vs. IPAK's 2.78 °C/W identical, but TO-220 offers better heatsink interface) | Preferred for prototyping or low-volume open-frame supplies where through-hole mounting and heatsink bolt-down are required. | Select when mechanical mounting rigidity and manual heatsink attachment outweigh surface-mount assembly benefits. |
| FDPF5N50NZ | 500 V, 0.75 Ω, 5.2 A, TO-220FP - lower RDS(on) but higher Qg (22 nC) and no avalanche rating guarantee. | Used in cost-driven consumer SMPS where avalanche stress is mitigated by circuit design, not device rating. | Choose only if system-level clamping is implemented and gate drive strength supports higher Qg. |
Compared with STP8NM50N, STU8NM50N offers identical electrical performance in a smaller IPAK footprint ideal for automated SMT lines, while FDPF5N50NZ trades guaranteed avalanche ruggedness for slightly lower conduction loss - making STU8NM50N optimal for space-constrained, reliability-critical industrial converters.
Availability
STU8NM50N is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, and PFC boost converters requiring stable component supply across multi-year production cycles.
Supply support for STU8NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications since 1987.
STU8NM50N belongs to the MDmesh™II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching power supplies where low RDS(on), low gate charge, and avalanche ruggedness are essential.
FAQ
What is the maximum continuous drain current for STU8NM50N at 100 °C case temperature?
The maximum continuous drain current is 3 A at TC = 100 °C, as specified in Table 2 of the official datasheet (Doc ID 17413 Rev 6). This derating reflects thermal limits of the IPAK package and ensures safe operation within its 2.78 °C/W Rthj-case specification.
Does STU8NM50N require a gate resistor for stability in hard-switched applications?
Yes - a 4.7 Ω gate resistor is recommended per Figure 15 test circuit for stable switching with 7 ns turn-on delay and 8.8 ns fall time. This value balances switching speed against gate oscillation, especially given the device's 5.4 Ω intrinsic gate resistance and 364 pF Ciss.
Can STU8NM50N replace STP8NM50N in an existing TO-220 layout?
No - STU8NM50N uses IPAK (TO-251) packaging with different footprint, thermal pad layout, and terminal spacing than TO-220. Direct replacement requires PCB redesign to accommodate the smaller surface-mount outline and exposed drain tab alignment per Figure 24.
Is the source-drain diode suitable for synchronous rectification in flyback converters?
Yes - the diode has trr = 187 ns and Qrr = 1.3 µC at 25 °C, enabling efficient synchronous operation up to ~100 kHz. However, Qrr increases to 1.5 µC at 150 °C, so thermal design must ensure junction temperature remains within spec to maintain timing predictability.
STU8NM50N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 790mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 364 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 45W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- IPAK
STU8NM50N FAQ
1.How can I place an order for STU8NM50N through Aetrix?
Please submit a Request for Quotation (RFQ) for STU8NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STU8NM50N reliable?
The price and inventory of STU8NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STU8NM50N is usually 5 days.
3.What payment methods are accepted for STU8NM50N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STU8NM50N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STU8NM50N?
STU8NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STU8NM50N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STU8NM50N?
For technical support, including STU8NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STU8NM50N requirements.
6.How does Aetrix verify that STU8NM50N is sourced from the original manufacturer or authorized distributors?
All STU8NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STU8NM50N meets industry standards.
7.What is the process for return or replacement of STU8NM50N?
All STU8NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STU8NM50N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STU8NM50N part is unused and in its original packaging.
Return procedure for STU8NM50N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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