STMicroelectronics STU95N2LH5
- Part No.:
- STU95N2LH5
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
STU95N2LH5.pdf
- Description:
- MOSFET N-CH 25V 80A IPAK
- Quantity:
- Payment:

- Shipping:

Inventory:4,652
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Product details
Overview
STU95N2LH5 from STMicroelectronics is an N-channel 25 V, 80 A Power MOSFET in IPAK (TO-251) package with RDS(on) < 4.9 mΩ at VGS = 10 V and high avalanche ruggedness. It delivers low gate drive power loss and industry-leading RDS(on) × Qg figure of merit for high-efficiency DC-DC converters and motor control switches.
For engineers reviewing the STU95N2LH5 datasheet, STU95N2LH5 pinout, STU95N2LH5 application, or STU95N2LH5 equivalent, key selection criteria include its 2.14 °C/W junction-to-case thermal resistance, 320 A pulsed drain current capability, 165 mJ single-pulse avalanche energy rating, and suitability for high-current synchronous rectification and battery protection circuits.
Technical Context
This STripFET™ V MOSFET uses optimized trench-gate process to achieve ultra-low on-resistance while maintaining fast switching performance: typical Qg = 13.4 nC and tr/tf = 38/7 ns under 40 A, 12.5 V resistive load conditions. Its source-drain diode exhibits trr = 32.4 ns and Qrr = 27.1 nC at di/dt = 100 A/µs.
The device operates across –55 °C to +175 °C junction temperature range with ±22 V gate-source voltage rating and 25 V drain-source breakdown voltage. Thermal derating is defined at 0.47 W/°C above 25 °C case temperature, supporting stable operation in thermally constrained PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum blocking voltage for 12–24 V system-level power switching |
| RDS(on) max | < 4.9 mΩ @ VGS = 10 V, ID = 40 A - Enables ≤ 15.7 W conduction loss at 80 A continuous current |
| ID cont | 80 A @ TC = 25 °C - Supports high-current load switching without external heatsink in short-duration duty cycles |
| EAS | 165 mJ - Withstands unclamped inductive energy spikes in motor drive and relay control applications |
| Rthj-case | 2.14 °C/W - Allows direct mounting to copper pour or small heatsink for thermal management in compact designs |
| Qg | 13.4 nC - Reduces gate driver power demand and enables use of low-power microcontroller GPIOs with appropriate buffer |
| tr/tf | 38 ns / 7 ns - Minimizes switching transition losses in 100–500 kHz SMPS topologies |
Pinout & Package
STU95N2LH5 is housed in IPAK (TO-251) package: three-terminal surface-mount variant with isolated tab, compatible with through-hole footprint but requiring solder-reflow assembly. The plastic body features ECOPACK® environmental compliance and 275 °C lead-soldering tolerance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input; requires 10 V drive for full enhancement; gate threshold VGS(th) = 1 V (min) |
| 2 (D) | Drain | Main power output terminal; electrically connected to exposed metal tab for thermal conduction |
| 3 (S) | Source | Power return path and reference node for gate drive; forms common node with internal body diode cathode |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) × Qg | Industry benchmark FoM enabling high-frequency, high-efficiency switching with minimal gate drive overhead |
| High avalanche ruggedness | 165 mJ single-pulse rating ensures robustness against inductive kickback in motor and solenoid drivers |
| Low gate drive power loss | 13.4 nC total gate charge reduces driver IC power dissipation and simplifies gate driver selection |
| Thermally enhanced IPAK | 2.14 °C/W Rthj-case supports >67 A continuous current at TC = 100 °C without forced cooling |
| Source-drain diode performance | 32.4 ns reverse recovery time and 27.1 nC Qrr reduce commutation losses in synchronous rectifier configurations |
Applications
| DC-DC Converter Primary Switch | Automotive Body Control Module |
|---|---|
|
Use Scenario: High-current buck converter in 24 V vehicle systems delivering up to 100 A to ADAS camera modules. IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz with synchronous rectification; handles peak currents up to 320 A. Use Value: 4.9 mΩ RDS(on) limits conduction loss to < 12.5 W at 80 A, reducing thermal stress on PCB copper layers. |
Use Scenario: Load switching for HVAC actuators, seat motors, and window lifters in centralized BCM architecture. IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by CAN-linked MCU; withstands load dump transients. Use Value: 165 mJ EAS rating absorbs inductive energy during abrupt current interruption without failure. |
| Battery Protection Circuit | Industrial Motor Starter |
|
Use Scenario: Bidirectional current sensing and overcurrent cutoff in 24 V LiFePO4 battery packs for material handling equipment. IC Role / Device Role / Timing Role: Back-to-back configured MOSFET pair for charge/discharge path control and short-circuit isolation. Use Value: Low 1.1 V forward voltage of integrated body diode minimizes voltage drop during reverse conduction mode. |
Use Scenario: Soft-start and run control of 3-phase BLDC fans and pumps in HVAC and industrial automation cabinets. IC Role / Device Role / Timing Role: Inverter half-bridge low-side switch; operated with dead-time-controlled PWM from gate driver IC. Use Value: 38 ns rise time enables precise edge control at 50–100 kHz PWM frequencies, minimizing shoot-through risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | RDS(on) = 4.8 mΩ (typ), but higher Qg = 139 nC and slower tr/tf (65/45 ns); TO-220 only | Limited to lower-frequency (< 100 kHz) switching due to gate charge and thermal resistance (3.0 °C/W) | Prefer STU95N2LH5 where high-frequency efficiency or surface-mount layout is required |
| STP95N2LH5 | Identical electrical specs but in TO-220 package; Rthj-case = 2.0 °C/W, PTOT = 80 W at TC = 25 °C | Better heat dissipation with heatsink; unsuitable for dense SMT-only boards | Choose STP95N2LH5 when mechanical mounting and thermal mass outweigh PCB space constraints |
Compared with IRF1404PBF and STP95N2LH5, STU95N2LH5 offers superior high-frequency switching efficiency via lower Qg and faster transitions, while its IPAK package enables compact SMT integration-critical for space-constrained automotive and industrial control modules.
Availability
STU95N2LH5 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor starters, and high-current DC-DC converters requiring stable component supply and long-term production continuity.
Supply support for STU95N2LH5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.
STU95N2LH5 belongs to the STripFET™ V Power MOSFET product line, engineered specifically for high-current, high-efficiency switching in 12–24 V systems where low RDS(on), fast switching, and avalanche reliability are critical.
FAQ
Is STU95N2LH5 suitable for synchronous rectification?
Yes. Its 4.9 mΩ RDS(on) and low 1.1 V source-drain forward voltage enable efficient synchronous rectification in buck and LLC converters. The 32.4 ns reverse recovery time and 27.1 nC Qrr minimize commutation losses when paired with complementary high-side switches.
What is the maximum continuous drain current at 100 °C case temperature?
The datasheet specifies ID = 67 A at TC = 100 °C. This value accounts for thermal derating from the 80 A rating at 25 °C using the 0.47 W/°C derating factor and Rthj-case = 2.14 °C/W, ensuring safe operation without exceeding 175 °C maximum junction temperature.
Can STU95N2LH5 replace STP95N2LH5 in existing TO-220 designs?
No direct replacement: STU95N2LH5 uses IPAK (TO-251) package with different footprint, thermal pad layout, and soldering profile. While electrically identical, mechanical redesign is required for PCB land pattern, thermal vias, and assembly process-STP95N2LH5 remains preferred for through-hole or heatsink-mounted implementations.
Does STU95N2LH5 have built-in ESD protection?
The datasheet does not specify on-chip ESD protection structures. Gate oxide is rated for ±22 V VGS, but external gate protection (e.g., Zener clamp or RC snubber) is recommended in systems exposed to handling or transient events, especially in automotive environments per ISO 10605 requirements.
STU95N2LH5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ V
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.9mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13.4 nC @ 5 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1817 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 70W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-251 (IPAK)
STU95N2LH5 FAQ
1.How can I place an order for STU95N2LH5 through Aetrix?
Please submit a Request for Quotation (RFQ) for STU95N2LH5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STU95N2LH5 reliable?
The price and inventory of STU95N2LH5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STU95N2LH5 is usually 5 days.
3.What payment methods are accepted for STU95N2LH5?
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4.How is shipping managed for STU95N2LH5?
STU95N2LH5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STU95N2LH5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STU95N2LH5?
For technical support, including STU95N2LH5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STU95N2LH5 requirements.
6.How does Aetrix verify that STU95N2LH5 is sourced from the original manufacturer or authorized distributors?
All STU95N2LH5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STU95N2LH5 meets industry standards.
7.What is the process for return or replacement of STU95N2LH5?
All STU95N2LH5 units undergo pre-shipment inspection (PSI). If there is an issue with STU95N2LH5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STU95N2LH5 part is unused and in its original packaging.
Return procedure for STU95N2LH5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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