STMicroelectronics STU9N60M2

Overview

STU9N60M2 from STMicroelectronics is an N-channel 600 V, 0.78 Ω max, 5.5 A MDmesh™ M2 Power MOSFET in IPAK (TO-251) package, optimized for high-efficiency SMPS, PFC stages, and industrial motor drives requiring low conduction loss and robust avalanche capability.

For engineers reviewing the STU9N60M2 datasheet, STU9N60M2 pinout, STU9N60M2 application, or STU9N60M2 equivalent, key selection criteria include R_DS(on) at 10 V, Q_g = 10 nC, C_oss,eq = 88 pF, 100% avalanche tested rating, and thermal resistance R_thj-case = 2.08 °C/W in IPAK.

Technical Context

This device employs ST's MDmesh™ M2 strip-based vertical structure to achieve low on-resistance and minimized output capacitance nonlinearity. Its Zener-protected gate enables robust ESD tolerance up to ±25 V, and its 15 V/ns diode recovery dv/dt rating supports reliable operation in hard-switched inductive loads.

The MOSFET delivers 105 mJ single-pulse avalanche energy (E_AS) at T_j = 25 °C with I_AR = 2 A, and exhibits a low reverse recovery charge (Q_rr = 1.65 µC at T_j = 25 °C) due to its integrated fast-recovery body diode - critical for reducing switching losses in bridge configurations.

Key Specifications

Pinout & Package

IPAK (TO-251) package: surface-mount variant of TO-220 with isolated tab, footprint-compatible with DPAK but higher thermal mass; tab is drain-connected and electrically isolated from PCB mount plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R099C7, STU9N60M2 trades 0.68 Ω higher R_DS(on) for 25 nC lower Q_g, enabling simpler gate drive and better high-frequency efficiency; versus STP9N60M2, it offers identical performance in a surface-mount IPAK form factor with equivalent thermal resistance but reduced board space and assembly cost.

Availability

STU9N60M2 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, solar microinverters, and UPS inverters requiring stable component supply across multi-year production cycles.

Supply support for STU9N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STU9N60M2 belongs to the MDmesh™ M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies and industrial motor control systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STU9N60M2 supports 3.6 A continuous drain current at T_case = 100 °C, as specified in Table 1 of DS9553 Rev 3. This derating reflects thermal limits under real-world heatsink conditions and ensures safe operation within SOA boundaries at elevated ambient temperatures.

Does STU9N60M2 have an integrated body diode, and what are its key recovery parameters?

Yes, STU9N60M2 features an integrated source-drain diode with V_SD = 1.6 V at I_SD = 5.5 A and T_j = 25 °C. Its reverse recovery time is 265 ns (t_rr) and Q_rr = 1.65 µC under standard test conditions (ISD = 5.5 A, di/dt = 100 A/µs, VDD = 60 V), per Table 7.

Is the IPAK package lead-free and RoHS-compliant?

Yes, STU9N60M2 is offered in ECOPACK®-compliant IPAK packaging, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. The device uses matte tin plating and Pb-free solderability, with full compliance documented in ST's ECOPACK® database and DS9553 Section 4.6.

Can STU9N60M2 replace STP9N60M2 in existing TO-220 layouts?

No - STU9N60M2 uses IPAK (TO-251), which has different footprint, pad layout, and thermal pad geometry than TO-220. While electrically identical, direct replacement requires PCB redesign to accommodate the surface-mount IPAK outline and thermal land pattern per Figure 28 and Table 13 of DS9553.