STMicroelectronics STV160NF02LAT4

Overview

STV160NF02LAT4 from STMicroelectronics is an N-channel Power MOSFET in PowerSO-10 package, rated for 20 V V_DSS, 160 A continuous drain current at T_C = 25°C, and ultra-low R_DS(on) of 1.8 mΩ at V_GS = 10 V. It delivers ultra-fast switching, 100% avalanche tested performance, and is optimized for synchronous rectification in high-current DC-DC converters.

For engineers reviewing the STV160NF02LAT4 datasheet, STV160NF02LAT4 pinout, STV160NF02LAT4 application, or STV160NF02LAT4 equivalent, key selection criteria include its 1.8 mΩ on-resistance at 10 V gate drive, 130 nC total gate charge, 3 nH internal source inductance, thermal resistance of 0.71 °C/W (junction-to-case), and suitability for VRM/telecom buck converter secondary-side switches.

Technical Context

This MOSFET employs ST's second-generation STripFET™ process with strip layout architecture to achieve high cell density and minimized conduction losses. Its low R_DS(on) and low gate charge (Q_g = 130 nC) enable high-efficiency operation in hard-switched topologies at up to 160 A continuous current.

The device features a robust safe operating area (SOA) limited only by junction temperature (T_j(max) = 175°C), 330 mJ single-pulse avalanche energy rating, and fast diode recovery (t_rr = 90 ns, Q_rr = 225 nC) - critical for synchronous rectifier reliability under high di/dt conditions.

Key Specifications

Pinout & Package

STV160NF02LAT4 uses the PowerSO-10 surface-mount package: low-profile (14.4 mm × 9.5 mm × 1.8 mm), dual-drain exposed tab for thermal and electrical connection, and 10-terminal configuration with source, gate, and drain pins arranged for minimal parasitic inductance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 20 V power MOSFET applications.

Compared with STL160N2LH5 and IRL1404ZPBF, STV160NF02LAT4 offers superior thermal performance (0.71 °C/W) and higher current rating (160 A) in a low-inductance surface-mount package - making it optimal for high-density, high-efficiency VRMs where thermal and EMI constraints dominate.

Availability

STV160NF02LAT4 is available at Aetrix Electronics and suitable for telecom VRMs, server CPU voltage regulators, and industrial PLC power stages requiring stable component supply and long-term production continuity.

Supply support for STV160NF02LAT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power management applications.

STV160NF02LAT4 belongs to ST's STripFET™ Power MOSFET product line, engineered specifically for high-current, low-voltage synchronous rectification and DC-DC conversion where ultra-low R_DS(on) and avalanche ruggedness are essential.

FAQ

What is the maximum continuous drain current for STV160NF02LAT4 at 100°C case temperature?

The maximum continuous drain current is 113 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the PowerSO-10 package's 0.71 °C/W junction-to-case resistance and 175°C maximum junction temperature.

Is STV160NF02LAT4 suitable for 5 V gate drive applications?

Yes - its gate threshold voltage is 1 V (min), 1.7 V (typ.), and 2.5 V (max), enabling turn-on with 5 V logic. However, R_DS(on) rises to 3.8 mΩ at V_GS = 5 V and ID = 40 A, so full 160 A capability requires ≥8 V gate drive per datasheet test conditions.

Does STV160NF02LAT4 have integrated ESD protection on the gate?

No - the datasheet does not specify gate ESD protection. IGSS is ±100 nA at ±15 V, indicating standard MOSFET gate oxide sensitivity. External gate protection (e.g., 10 Ω series resistor + 12 V Zener clamp) is recommended for handling and PCB assembly per JEDEC standards.

What is the safe operating area (SOA) limitation for STV160NF02LAT4 in pulsed operation?

Pulsed drain current is limited to 640 A (I_DM) with pulse width ≤300 µs and duty cycle ≤1.5%. The SOA is thermally limited - no secondary breakdown curve is provided, and operation must stay within the R_DS(on)-limited boundary and 175°C T_j limit per the datasheet's Figure 10.