STMicroelectronics STV160NF02LT4

Overview

STV160NF02LT4 from STMicroelectronics is an N-channel Power MOSFET in PowerSO-10 package, rated for 20 V V_DS, 160 A continuous drain current at T_C = 25°C, and ultra-low R_DS(on) of 1.6 mΩ at V_GS = 10 V. It serves as a high-efficiency synchronous rectifier or main switch in low-voltage, high-current DC-DC converters for telecom VRMs and server power supplies.

For engineers reviewing the STV160NF02LT4 datasheet, STV160NF02LT4 pinout, STV160NF02LT4 application, or STV160NF02LT4 equivalent, key selection criteria include its 0.71°C/W junction-to-case thermal resistance, 115 nC total gate charge, 1.5 J single-pulse avalanche energy rating, and compatibility with 5 V–10 V gate drive in high-frequency buck topologies.

Technical Context

This MOSFET employs ST's second-generation STripFET™II process with strip layout architecture, enabling ultra-high cell density and minimizing conduction and switching losses. Its low-profile PowerSO-10 package delivers very low parasitic inductance (L_S = 4 nH) and optimized thermal path for high-power density designs.

The device features a 1 V gate threshold voltage, 210 S forward transconductance at 80 A, and fast switching performance: t_d(on) = 28 ns, t_r = 800 ns, t_d(off) = 80 ns, and t_f = 240 ns under standard 4.7 Ω gate drive conditions - critical for >300 kHz VRM operation.

Key Specifications

Pinout & Package

PowerSO-10 is a surface-mount, low-profile, 10-terminal package with exposed drain pad for thermal and electrical connection. Terminals are arranged in two rows (5+5), with source and gate pins distributed to minimize loop inductance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-voltage MOSFET applications.

Compared with IRL1404ZPBF and STL110N5LF6, STV160NF02LT4 uniquely balances ultra-low R_DS(on), low-inductance packaging, and proven avalanche ruggedness in a thermally optimized PowerSO-10 format - making it optimal for space-constrained, high-efficiency VRMs where thermal management and switching loss dominate design constraints.

Availability

STV160NF02LT4 is available at Aetrix Electronics and suitable for telecom VRMs, server CPU voltage regulators, GPU power delivery modules, and high-current point-of-load converters requiring stable component supply and long-lifecycle support.

Supply support for STV160NF02LT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The STV160NF02LT4 belongs to ST's STripFET™II Power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and thermal robustness are essential.

FAQ

Is STV160NF02LT4 suitable for 5 V gate drive applications?

Yes. With a gate threshold voltage of 1 V (min) and guaranteed turn-on at V_GS = 5 V, this MOSFET fully enhances at standard logic-level drive. Its R_DS(on) remains ≤2.5 mΩ at V_GS = 5 V and I_D = 40 A, supporting efficient operation without gate boosting.

What is the maximum safe operating frequency for STV160NF02LT4 in a buck converter?

Based on measured switching times (t_d(on) = 28 ns, t_d(off) = 80 ns, t_r + t_f ≈ 1.04 µs) and gate charge (115 nC), the device supports stable operation up to 1 MHz in hard-switched buck topologies when paired with appropriate gate drivers and PCB layout minimizing loop inductance.

Does STV160NF02LT4 include an integrated body diode for synchronous rectification?

Yes. It features a fast, low-V_SD intrinsic body diode with forward voltage of 1.5 V at I_SD = 160 A and reverse recovery time of 90 ns. This enables reliable synchronous rectification in continuous conduction mode, though external Schottky clamping may be used for further loss reduction.

Can STV160NF02LT4 replace older STripFET™I devices like STP160NF02L in existing designs?

Yes - with identical pinout, voltage/current ratings, and improved R_DS(on) (1.6 mΩ vs. 2.0 mΩ) and lower gate charge. Thermal and electrical behavior is backward-compatible; layout and gate drive design require no changes, and efficiency gains are measurable at full load.