STMicroelectronics STV160NF03LAT4

Overview

STV160NF03LAT4 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in PowerSO-10 package, rated for 30 V V_DSS, 160 A continuous drain current at T_C = 25°C, and typ. R_DS(on) = 2.1 mΩ at V_GS = 10 V. It features ultra-low gate charge (123 nC), fast switching (t_r = 380 ns), and 100% avalanche tested for robustness in high-current synchronous rectification.

For engineers reviewing the STV160NF03LAT4 datasheet, STV160NF03LAT4 pinout, STV160NF03LAT4 application, or STV160NF03LAT4 equivalent, this device is selected for high-efficiency, low-voltage DC-DC conversion where thermal performance, low conduction loss, and controlled turn-off energy are critical design constraints.

Technical Context

This MOSFET employs ST's second-generation STripFET™ process with strip layout architecture to achieve high cell density and minimized R_DS(on) × Q_g figure-of-merit. Its PowerSO-10 package delivers low parasitic inductance (L_S = 3 nH) and low thermal resistance (R_thj-case = 0.71 °C/W), enabling high-frequency operation in hard-switched topologies.

The device supports gate drive down to 5 V (R_DS(on) ≤ 7 mΩ at V_GS = 5 V, I_D = 40 A), exhibits low threshold voltage (V_GS(th) = 1 V typ.), and integrates a source-drain diode with t_rr = 80 ns and Q_rr = 180 nC - optimized for synchronous buck converter secondary-side switching.

Key Specifications

Pinout & Package

PowerSO-10 is a surface-mount, low-profile package with exposed drain pad for thermal and electrical connection. It features 10 terminals arranged in dual-row configuration with integrated source and drain paralleling for reduced resistance and inductance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF1404ZPBF and STL110N3LLH6, STV160NF03LAT4 offers the lowest R_DS(on) × R_thj-case product (1.5 mΩ·°C/W), making it optimal for thermally demanding, high-current synchronous rectification where both conduction loss and junction temperature must be minimized.

Availability

STV160NF03LAT4 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, industrial motor drives, and high-power LED drivers requiring stable component supply and long-term production continuity.

Supply support for STV160NF03LAT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

This device belongs to ST's STripFET™ Power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and avalanche ruggedness are mandatory.

FAQ

Is STV160NF03LAT4 pin-compatible with STV160NF03L?

Yes - STV160NF03LAT4 is the tape-and-reel variant of STV160NF03L, sharing identical PowerSO-10 pinout, electrical specifications, and thermal characteristics. The "T4" suffix denotes packaging format only; no functional or mechanical differences exist between the two part numbers.

What is the maximum recommended gate resistor for hard-switching at 1 MHz?

For 1 MHz operation, RG ≤ 2.2 Ω is recommended to maintain t_r < 200 ns and minimize switching loss. At RG = 4.7 Ω (per datasheet test condition), t_r = 380 ns - exceeding practical limits for 1 MHz. Lower RG requires careful layout to avoid gate oscillation due to low L_S and C_iss = 5350 pF.

Can STV160NF03LAT4 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (confirmed by normalized R_DS(on) vs. T_j curve) enables stable current sharing. Parallel use requires matched gate drive paths, symmetrical PCB layout, and thermal coupling via shared heatsink to ensure balanced junction temperatures across devices.

Does the body diode support continuous reverse conduction in synchronous rectifier mode?

No - the body diode is not rated for continuous reverse conduction. In synchronous rectifier applications, the MOSFET must be actively driven during the freewheeling interval to avoid diode conduction. Its low V_SD = 1.5 V at I_SD = 160 A and fast t_rr = 80 ns are designed for brief reverse recovery, not steady-state diode operation.