STMicroelectronics STV200N55F3

Overview

STV200N55F3 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in PowerSO-10 package, rated for 55 V V_DS, 1.8 mΩ R_DS(on) (typ.), 200 A continuous drain current at T_C = 25 °C, and optimized for high-efficiency switching in DC-DC converters and motor control inverters.

For engineers reviewing the STV200N55F3 datasheet, STV200N55F3 pinout, STV200N55F3 application, or STV200N55F3 equivalent, key selection criteria include low conduction loss (R_DS(on) ≤ 2.5 mΩ), rugged avalanche capability (E_AS = 1.0 J), gate charge (Q_g = 100 nC), thermal resistance (R_thj-case = 0.5 °C/W), and PowerSO-10 mechanical compatibility with high-current PCB layouts.

Technical Context

This device implements ST's STripFET™ III process to achieve high cell density and low parasitic inductance. Its internal structure supports fast switching (t_d(on) = 25 ns, t_f = 50 ns) and robust unclamped inductive switching with guaranteed single-pulse avalanche energy of 1.0 J at T_j = 25 °C.

The PowerSO-10 package integrates three parallel source terminals and two drain terminals to minimize current path inductance and improve thermal transfer to the PCB. Gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, enabling reliable turn-on with standard 10 V gate drive while maintaining noise immunity.

Key Specifications

Pinout & Package

STV200N55F3 uses the PowerSO-10 surface-mount package: 10-terminal, low-profile (max height 1.65 mm), with 3 source pins (S1–S3), 2 drain pins (D1–D2), 1 gate pin (G), and 4 thermal/ground pads (T1–T4) integrated into the exposed copper slug for direct PCB thermal coupling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 55 V power switching applications.

Compared with IRFB4115PBF and STL220N55F7, STV200N55F3 offers optimal balance of low R_DS(on), moderate Q_g, and surface-mount thermal performance-making it ideal for space-constrained, high-current industrial inverters where both conduction and switching losses must be minimized without added heatsinking.

Availability

STV200N55F3 is available at Aetrix Electronics and suitable for industrial motor drives, high-power DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term production continuity.

Supply support for STV200N55F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

The STripFET™ Power MOSFET product line targets high-efficiency, high-reliability power conversion systems-specifically engineered for low R_DS(on), fast switching, and ruggedness in demanding industrial and transportation environments.

FAQ

What is the maximum safe operating temperature for STV200N55F3?

The STV200N55F3 has a maximum operating junction temperature (T_j) of 175 °C and a storage temperature range of –55 °C to +175 °C. At T_C = 100 °C, its continuous drain current is derated to 170 A. Thermal design must ensure junction temperature remains below 175 °C under worst-case ambient and load conditions using the specified R_thj-case = 0.5 °C/W.

Does STV200N55F3 have integrated ESD protection?

No, STV200N55F3 does not include on-chip ESD protection diodes. The gate oxide is rated for ±20 V absolute maximum gate-source voltage, and external gate protection (e.g., Zener clamp or series resistor) is required in systems exposed to handling or system-level ESD events per IEC 61000-4-2.

Can STV200N55F3 be used in synchronous rectification topologies?

Yes-its low R_DS(on) (1.8 mΩ typ.), fast switching (t_f = 50 ns), and low Q_gd/Q_gs ratio make it suitable for synchronous rectification in high-current DC-DC converters. However, body diode reverse recovery (t_rr = 60 ns, Q_rr = 110 nC) must be managed via precise gate timing to avoid shoot-through in hard-switched topologies.

Is STV200N55F3 RoHS-compliant and halogen-free?

Yes, STV200N55F3 is manufactured in ST's ECOPACK®-compliant PowerSO-10 package, meeting RoHS Directive 2011/65/EU and halogen-free requirements per IEC 61249-2-21. Full compliance documentation, including material declarations and test reports, is available via ST's official product page and authorized distributors.