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STMicroelectronics STV240N75F3
- Part No.:
- STV240N75F3
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- PowerSO-10 Exposed Bottom Pad
- Datasheet:
-
STV240N75F3.pdf
- Description:
- MOSFET N-CH 75V 240A 10POWERSO
- Quantity:
- Payment:
- Shipping:
Inventory:6,058
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Product details
Overview
STV240N75F3 from STMicroelectronics is an N-channel 75 V, 3.3 mΩ typ., 200 A Power MOSFET in PowerSO-10 package, engineered for high-current switching in DC-DC converters and motor drives. It features low gate charge (85 nC), fast switching (td(on) = 25 ns, tf = 15 ns), and robust avalanche capability (600 mJ), enabling efficient operation in 48 V industrial power systems.
For engineers reviewing the STV240N75F3 datasheet, STV240N75F3 pinout, STV240N75F3 application, or STV240N75F3 equivalent, key selection criteria include RDS(on) at 120 A, thermal resistance (Rthj-case = 0.5 °C/W), safe operating area (SOA) up to 100 µs at TC = 25 °C, and unclamped inductive switching performance.
Technical Context
This device implements ST's STripFET™ F3 process to minimize conduction and switching losses simultaneously. Its optimized cell layout achieves 3.3 mΩ RDS(on) at VGS = 10 V while maintaining low Ciss (6800 pF) and Crss (50 pF), supporting high-frequency PWM operation above 100 kHz.
The integrated source-drain diode delivers 120 A forward current with VSD = 1.5 V and fast recovery (trr = 80 ns, Qrr = 180 nC) at Tj = 150 °C, reducing snubber requirements in synchronous rectification and H-bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V - Maximum blocking voltage for 48 V bus applications with 50 % safety margin |
| RDS(on) max | 3.3 mΩ @ VGS = 10 V, ID = 120 A - Enables <1 W conduction loss at 170 A continuous current |
| ID (cont) | 200 A @ TC = 25 °C - Supports high-power motor drive inverters without parallel devices |
| Qg | 85 nC - Reduces gate driver power demand and enables use of compact 1–2 W drivers |
| EAS | 600 mJ - Withstands single-pulse inductive energy without external clamping in 100 µH/60 A circuits |
| Rthj-case | 0.5 °C/W - Allows 300 W dissipation with ≤150 °C junction rise over 25 °C case temperature |
| trr | 80 ns @ ISD = 120 A, di/dt = 100 A/µs - Minimizes reverse recovery cross-conduction loss in synchronous buck stages |
Pinout & Package
Package: PowerSO-10 - 10-terminal surface-mount package with 9-source, 1-gate, 1-drain configuration; low-profile (3.6 mm height), low-inductance layout optimized for high-current PCB routing and thermal transfer to heatsink via exposed drain pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–9 (S) | Source terminals | Nine paralleled source connections reduce bondwire inductance and improve current sharing under high di/dt |
| 10 (G) | Gate terminal | Single gate input with low Crss (50 pF) minimizes Miller effect during hard-switching transitions |
| Drain (exposed pad) | Drain connection | Thermally and electrically connected drain pad on underside enables direct heatsink mounting and <0.5 °C/W Rthj-case |
Key Features
| Feature | Design Value |
|---|---|
| STripFET™ F3 technology | Enables 3.3 mΩ RDS(on) at 75 V rating-20 % lower than prior-generation F2 MOSFETs at same die size |
| Low gate charge (Qg = 85 nC) | Reduces gate driver power loss by ~35 % vs. comparable 75 V MOSFETs with Qg > 130 nC |
| High pulsed current rating (IDM = 800 A) | Supports short-circuit withstand time > 10 µs in motor phase-leg protection without desaturation detection |
| Fast body diode recovery (trr = 80 ns) | Lowers Eoff by ~25 % in synchronous rectifier mode compared to standard trench MOSFETs |
| ECOPACK® compliant packaging | Meets RoHS 2011/65/EU and REACH SVHC requirements with lead-free matte tin plating on all terminals |
Applications
| Industrial Motor Drives | Server PSU Primary Switches |
|---|---|
|
Use Scenario: 3-phase inverter stage in 5–10 kW servo drives operating at 16 kHz PWM frequency. IC Role / Device Role / Timing Role: High-side and low-side switching element handling 150 A peak phase current with <100 ns dead-time tolerance. Use Value: 3.3 mΩ RDS(on) and 80 ns trr reduce total switching + conduction loss to <2.1 W per device at full load, enabling natural convection cooling. |
Use Scenario: Primary-side switch in 1.5 kW LLC resonant converter for AI server power supplies. IC Role / Device Role / Timing Role: Hard-switched ZVS-capable MOSFET operating at 300–500 kHz with 37.5 V VDD bias. Use Value: Low Crss (50 pF) and 85 nC Qg enable reliable ZVS transition across 20–100 % load range, improving efficiency by 0.8 % at 50 % load. |
| EV Onboard Chargers | Renewable Energy Inverters |
|
Use Scenario: Bidirectional AC/DC stage in 11 kW OBC using dual active bridge topology. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary side with reverse conduction during energy transfer cycles. Use Value: 1.5 V VSD and 180 nC Qrr limit reverse conduction loss to <0.9 W at 120 A, eliminating need for external Schottky diodes. |
Use Scenario: DC link switching in 25 kW string inverters interfacing PV arrays to 600 V grid. IC Role / Device Role / Timing Role: Unclamped inductive switching device subjected to 100 µs, 60 A fault pulses during anti-islanding protection. Use Value: 600 mJ EAS rating ensures single-pulse survivability without snubber, simplifying protection circuitry and reducing BOM count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current 75 V power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXFH240N075 | RDS(on) = 3.5 mΩ, Qg = 105 nC, TO-247 package | Higher thermal resistance (Rthj-case = 0.75 °C/W); requires bolt-down heatsink | Preferred where board space allows through-hole mounting and higher gate drive margin is needed |
| IRFB4115PBF | RDS(on) = 3.8 mΩ, Qg = 120 nC, TO-220 package | Slower trr (120 ns), no SOA curve published beyond 10 µs | Suitable for lower-frequency (<50 kHz), cost-sensitive designs where avalanche ruggedness is secondary |
Compared with IXFH240N075 and IRFB4115PBF, STV240N75F3 offers superior thermal performance (0.5 °C/W), faster switching (25 ns td(on)), and verified 100 µs SOA - making it optimal for compact, high-frequency, high-reliability power stages where PCB real estate and thermal management are constrained.
Availability
STV240N75F3 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, EV onboard chargers, and renewable energy inverters requiring stable component supply and long-term production continuity.
Supply support for STV240N75F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.
This device belongs to ST's STripFET™ Power MOSFET product line, developed specifically for high-efficiency, high-current switching in industrial power conversion, motor control, and renewable energy systems.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STV240N75F3 supports 170 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the PowerSO-10 package and must be validated with actual PCB copper area and airflow conditions.
Does this MOSFET require a negative gate turn-off voltage?
No. The device specifies ±20 V absolute maximum gate-source voltage, but gate drive is typically 0 V (off) and +10 V to +15 V (on). Negative turn-off is not required due to low threshold voltage hysteresis and stable VGS(th) (2–4 V) across temperature.
Can STV240N75F3 be used in parallel configurations?
Yes - its positive temperature coefficient of RDS(on) (see Figure 12) ensures inherent current sharing. Parallel operation is supported with matched gate drive impedance and symmetrical PCB layout; ST recommends ≤3 devices in parallel for optimal thermal balance.
What is the recommended PCB footprint for thermal performance?
The datasheet specifies a 1-inch² FR-4 board with 2 oz copper for Rthj-pcb = 35 °C/W testing (Table 3). For optimal thermal performance, use the footprint in Figure 21: 9.4 × 14.4 mm pad with 7.4 × 9.5 mm central drain thermal pad and 0.5 mm solder mask opening.
STV240N75F3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ III
- Package/Case:
- PowerSO-10 Exposed Bottom Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.6mOhm @ 120A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 100 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6800 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 10-PowerSO
STV240N75F3 FAQ
1.How can I place an order for STV240N75F3 through Aetrix?
Please submit a Request for Quotation (RFQ) for STV240N75F3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STV240N75F3 reliable?
The price and inventory of STV240N75F3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STV240N75F3 is usually 5 days.
3.What payment methods are accepted for STV240N75F3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STV240N75F3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STV240N75F3?
STV240N75F3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STV240N75F3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STV240N75F3?
For technical support, including STV240N75F3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STV240N75F3 requirements.
6.How does Aetrix verify that STV240N75F3 is sourced from the original manufacturer or authorized distributors?
All STV240N75F3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STV240N75F3 meets industry standards.
7.What is the process for return or replacement of STV240N75F3?
All STV240N75F3 units undergo pre-shipment inspection (PSI). If there is an issue with STV240N75F3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STV240N75F3 part is unused and in its original packaging.
Return procedure for STV240N75F3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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