Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STV250N55F3

Name: STV250N55F3
Brand: STMicroelectronics
SKU: STV250N55F3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STV250N55F3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: PowerSO-10 Exposed Bottom Pad

Datasheet:: STV250N55F3.pdf

Description:: MOSFET N-CH 55V 200A 10POWERSO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,892

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STV250N55F3 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in PowerSO-10 package, rated for 55 V V_DS, 1.5 mΩ R_DS(on) (typ.) at V_GS = 10 V and I_D = 75 A, and 200 A continuous drain current at T_C = 25 °C. It employs STripFET™ III technology to minimize conduction and switching losses, and is designed for high-current automotive switching applications including motor control and DC-DC conversion.

For engineers reviewing the STV250N55F3 datasheet, STV250N55F3 pinout, STV250N55F3 application, or STV250N55F3 equivalent, key selection criteria include its ultra-low R_DS(on), 800 A pulsed drain capability, 300 W power dissipation at T_C = 25 °C, low gate charge (100 nC total), and thermal resistance of 0.5 °C/W junction-to-case - all critical for thermally constrained, high-efficiency power stages.

Technical Context

This MOSFET operates as a unidirectional high-side or low-side switch with gate-controlled enhancement-mode turn-on. Its STripFET™ III process delivers optimized cell pitch and reduced specific on-resistance, enabling high current density while maintaining robust avalanche capability (1 J single-pulse EAS).

The device features integrated source-drain diode with 120 A forward current capability (V_SD = 1.5 V) and fast reverse recovery (t_rr = 60 ns typ., Q_rr = 110 nC), supporting synchronous rectification and hard-switched inductive load management in automotive power systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage compatible with 48 V automotive systems and 36 V industrial rails.
R_DS(on) max	2.2 mΩ - Ensures ≤ 33 W conduction loss at 100 A, critical for thermal management in compact modules.
I_D cont @ T_C=25°C	200 A - Package-limited continuous current enabling single-device solutions for high-power solenoid or pump drivers.
Q_g total	100 nC - Low gate drive energy reduces controller loading and enables efficient operation at >100 kHz switching frequencies.
R_thj-case	0.5 °C/W - Enables direct heatsink mounting with minimal thermal interface resistance for stable 175 °C junction operation.
EAS	1 J - Rated avalanche energy supports unclamped inductive switching in motor phase-legs without external snubbers.
t_r/t_f	150 ns / 50 ns - Fast switching transitions reduce overlap losses in half-bridge configurations.

Pinout & Package

STV250N55F3 uses the PowerSO-10 surface-mount package: 10-terminal, low-profile, exposed-drain thermal pad design with very low parasitic inductance. The package integrates 8 parallel source terminals and 1 gate terminal for optimal current sharing and gate drive stability.

Pin/Terminal	Circuit Role	Design Meaning
1–8 (S)	Source connection	Eight parallel source pins minimize source inductance and distribute current evenly across internal die bonds.
9 (G)	Gate input	Single gate terminal with low-inductance path; requires <20 V gate drive per datasheet absolute maximum rating.
10 (D)	Drain connection / thermal pad	Exposed drain pad serves as primary heat transfer path to PCB copper and external heatsink; electrically tied to drain.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	1.5 mΩ typ. at 10 V drive enables <10 W conduction loss at 80 A - essential for 48 V EV auxiliary systems.
STripFET™ III process	Reduces gate charge by ~25% vs prior generation, lowering driver IC stress and improving efficiency in PWM motor control.
Low-profile PowerSO-10	3.6 mm max height allows integration into space-constrained engine control units and battery disconnect modules.
High pulsed current rating	800 A IDM supports short-circuit withstand in starter relays and high-inertia motor startup without desaturation.
Robust body diode	120 A ISD and 60 ns t_rr support freewheeling in H-bridge inverters without external Schottky diodes.

Applications

Automotive Starter Relay

48 V DC-DC Converter Primary Switch

Use Scenario: High-current make/break switching in 12 V/48 V dual-battery starter circuits with peak loads up to 600 A.

IC Role / Device Role / Timing Role: Main power switch controlling solenoid engagement; operates in static on/off mode with <10 ms transition time.

Use Value: 200 A continuous rating and 800 A pulsed capability eliminate need for paralleled devices; 0.5 °C/W R_thj-case prevents thermal runaway during repeated cranking cycles.

Use Scenario: Primary-side synchronous rectifier in isolated bidirectional DC-DC converters for vehicle energy recuperation.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology operating at 100–200 kHz with zero-voltage switching.

Use Value: 100 nC Q_g and 150 ns t_r enable efficient high-frequency operation; low C_oss (1450 pF) minimizes capacitive turn-off loss.

Electric Power Steering (EPS) Motor Driver

Commercial Vehicle Air Suspension Compressor

Use Scenario: Half-bridge leg in 3-phase inverter driving brushless EPS motor with peak phase current ≥150 A.

IC Role / Device Role / Timing Role: Low-side switch handling high di/dt commutation; must sustain reverse recovery of complementary high-side body diode.

Use Value: 110 nC Q_rr and 60 ns t_rr limit recovery loss and EMI; 1.5 mΩ R_DS(on) reduces I²R heating during sustained assist torque.

Use Scenario: Direct-drive switch for 24 V air compressor motor in heavy-duty trucks, requiring 100% duty cycle under load.

IC Role / Device Role / Timing Role: Single-ended switch replacing mechanical contactor; conducts continuously during inflation cycles lasting >30 s.

Use Value: 300 W P_TOT and 175 A I_D @ T_C = 100 °C ensure reliable operation without forced cooling; PowerSO-10 footprint simplifies thermal pad layout on 2 oz Cu PCB.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK50Z	500 V V_DS, 0.22 Ω R_DS(on), TO-247 package, higher R_DS(on) and larger footprint	Designed for 400 V SMPS; unsuitable for 48 V high-current apps due to excessive conduction loss	Select only if higher voltage rating and legacy through-hole assembly are required.
IPP026N06N	60 V V_DS, 2.6 mΩ R_DS(on), TO-220 package, 120 A I_D rating	Lower current capacity and higher thermal resistance (1.2 °C/W) limit use in sustained 200 A applications	Acceptable for lower-power 48 V systems where board space permits TO-220 mounting and thermal derating is applied.

Compared with STW20NK50Z and IPP026N06N, STV250N55F3 uniquely combines 55 V rating, sub-2 mΩ on-resistance, 200 A current, and PowerSO-10 thermal performance - making it the only viable single-device solution for space- and thermally constrained 48 V automotive switches requiring >150 A continuous conduction.

Availability

STV250N55F3 is available at Aetrix Electronics and suitable for automotive starter systems, 48 V DC-DC converters, and electric power steering motor drivers requiring stable component supply and long-term production continuity.

Supply support for STV250N55F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power discrete technologies with over 40 years of silicon innovation.

This device belongs to ST's STripFET™ Power MOSFET product line, engineered specifically for high-current, low-voltage automotive power switching - emphasizing minimized R_DS(on), fast switching, and ruggedness in harsh environments.

FAQ

What is the maximum safe operating temperature for STV250N55F3?

The STV250N55F3 has a specified operating junction temperature range of –55 °C to 175 °C. Its maximum continuous case temperature is 100 °C, beyond which drain current must be derated linearly at 2.0 W/°C. Thermal design must maintain T_j ≤ 175 °C using the 0.5 °C/W R_thj-case value and verified PCB copper area per Figure 21.

Can STV250N55F3 be used in synchronous rectification topologies?

Yes - its integrated source-drain diode supports synchronous rectification with 120 A forward current, 1.5 V forward voltage at 120 A, and 60 ns reverse recovery time. However, external Schottky diodes may still be preferred in ultra-high-frequency (>500 kHz) designs due to lower Q_rr and V_F.

Is STV250N55F3 qualified for automotive applications?

While not explicitly AEC-Q101 certified per public documentation, STV250N55F3 is designated for automotive switching applications in its official datasheet (Doc ID 14088 Rev 5), features automotive-grade packaging (PowerSO-10), and meets extended temperature and reliability requirements typical of engine bay and chassis-mounted power modules.

What gate drive voltage is recommended for optimal R_DS(on) performance?

A minimum gate-source voltage of 10 V is required to achieve the specified 1.5 mΩ R_DS(on) (typ.). Driving at 12–15 V further reduces on-resistance marginally but increases gate driver power and risk of exceeding ±20 V V_GS absolute maximum rating during transients.

STV250N55F3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: PowerSO-10 Exposed Bottom Pad

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 200A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 10-PowerSO

STV250N55F3 FAQ

1.How can I place an order for STV250N55F3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STV250N55F3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STV250N55F3 reliable?

The price and inventory of STV250N55F3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STV250N55F3 is usually 5 days.

3.What payment methods are accepted for STV250N55F3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STV250N55F3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STV250N55F3?

STV250N55F3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STV250N55F3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STV250N55F3?

For technical support, including STV250N55F3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STV250N55F3 requirements.

6.How does Aetrix verify that STV250N55F3 is sourced from the original manufacturer or authorized distributors?

All STV250N55F3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STV250N55F3 meets industry standards.

7.What is the process for return or replacement of STV250N55F3?

All STV250N55F3 units undergo pre-shipment inspection (PSI). If there is an issue with STV250N55F3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STV250N55F3 part is unused and in its original packaging.

Return procedure for STV250N55F3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…