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STMicroelectronics STV270N4F3

Name: STV270N4F3
Brand: STMicroelectronics
SKU: STV270N4F3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STV270N4F3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: PowerSO-10 Exposed Bottom Pad

Datasheet:: STV270N4F3.pdf

Description:: MOSFET N-CH 40V 270A 10POWERSO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STV270N4F3 from STMicroelectronics is an N-channel Power MOSFET in PowerSO-10 package, rated for 40 V drain-source voltage, 1.25 mΩ typical R_DS(on) at V_GS = 10 V, and 270 A continuous drain current at T_C = 25 °C. It employs STripFET™ III technology to minimize conduction losses and parasitic inductance, targeting high-current switching in power conversion stages.

For engineers reviewing the STV270N4F3 datasheet, STV270N4F3 pinout, STV270N4F3 application, or STV270N4F3 equivalent, key selection criteria include its low R_DS(on), high pulsed current capability (1080 A), avalanche energy rating (1000 mJ), thermal resistance (0.5 °C/W junction-to-case), and suitability for synchronous rectification and motor drive half-bridges.

Technical Context

This MOSFET operates as a unidirectional, enhancement-mode switch with gate-controlled channel formation. Its STripFET™ III cell structure delivers optimized charge balance between R_DS(on) and Q_g, enabling fast switching (t_d(on) = 25 ns typ., t_f = 45 ns typ.) while maintaining robust safe operating area up to 175 °C junction temperature.

The device integrates a source-drain diode with 1.3 V forward voltage at 80 A and 70 ns reverse recovery time under defined inductive test conditions. Thermal design relies on direct case mounting-its PowerSO-10 package features exposed drain pad for low-inductance, high-current PCB routing and efficient heat transfer to heatsink or copper plane.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage before avalanche onset; defines upper limit for DC bus or flyback clamp applications
R_DS(on) max	1.5 mΩ - Worst-case on-resistance at 100 °C case temperature; determines conduction loss in high-current paths
I_D cont @ T_C=25°C	270 A - Continuous current limited by package thermal capacity; requires aggressive heatsinking or forced-air cooling
E_AS	1000 mJ - Single-pulse avalanche energy rating; enables unclamped inductive switching without failure under defined stress
R_thj-case	0.5 °C/W - Junction-to-case thermal resistance; sets minimum heatsink requirement for 300 W dissipation at 25 °C ambient
Q_g	110 nC - Total gate charge at V_DD = 20 V; directly impacts driver power and switching loss in hard-switched topologies
t_r/t_f	180/45 ns - Rise/fall times with 4.7 Ω gate resistor; defines minimum achievable switching frequency before excessive transition loss

Pinout & Package

STV270N4F3 uses the PowerSO-10 surface-mount package with exposed drain pad (pins 1–5 and 6–10 are source terminals; pin 9 is gate; drain connected to underside metal pad). This layout minimizes source inductance and supports high-current PCB routing.

Pin/Terminal	Circuit Role	Design Meaning
1–5, 6–10 (all except 9)	Source	Parallel-connected source terminals reduce bond-wire inductance and improve current sharing across internal die connections
9	Gate	Single gate input terminal; requires low-impedance drive path to minimize ringing and ensure clean turn-on/turn-off
Drain (exposed pad)	Drain	Thermally and electrically connected to PCB copper pour; serves as primary current return and heatsink interface

Key Features

Feature	Design Value
Ultra-low R_DS(on)	1.25 mΩ typ. at 10 V gate drive enables <1 W conduction loss at 100 A, critical for high-efficiency 12 V/48 V systems
Low-profile PowerSO-10	Height ≤ 1.8 mm with exposed drain pad allows integration into space-constrained power modules and automotive ECUs
High avalanche ruggedness	1000 mJ single-pulse E_AS supports reliable operation in inductive load switching without external snubbers
Optimized gate charge	110 nC total gate charge balances switching speed and driver complexity for 100–500 kHz PWM applications

Applications

DC-DC Converter Primary Switch

Motor Drive Half-Bridge Low-Side

Use Scenario: High-current buck converter in server VRM or telecom PSU delivering >200 A at 12 V output.

IC Role / Device Role / Timing Role: Main synchronous rectifier switch operating at 300–500 kHz with gate-driven zero-voltage switching assist.

Use Value: 1.25 mΩ R_DS(on) reduces conduction loss by >40% versus comparable 2 mΩ MOSFETs, improving full-load efficiency by 0.8–1.2%.

Use Scenario: 48 V BLDC motor controller for e-bike or industrial actuator with peak phase current >250 A.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, commutated at ≤20 kHz with active freewheeling.

Use Value: 1080 A pulsed current rating and 0.5 °C/W R_thj-case allow short-duration torque bursts without thermal derating or SOA violation.

Automotive Starter Solenoid Replacement

Industrial UPS Inverter Output Stage

Use Scenario: Solid-state replacement for mechanical starter solenoid in 12 V automotive engine start-stop systems.

IC Role / Device Role / Timing Role: High-current bidirectional switch controlling battery-to-starter motor connection during cranking pulses.

Use Value: 270 A continuous rating and 1000 mJ E_AS withstand repeated 300–500 ms cranking events without degradation or thermal runaway.

Use Scenario: Output stage of 5 kVA online UPS inverter converting 400 V DC bus to 230 V AC with sinusoidal PWM.

IC Role / Device Role / Timing Role: High-current IGBT replacement in parallel-configured H-bridge legs for reduced conduction loss and simplified gate drive.

Use Value: Low Q_g/R_DS(on) ratio enables faster switching than IGBTs while maintaining <0.5 V saturation drop at 200 A RMS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-current power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 3.2 mΩ @ 10 V; TO-220FP package; higher R_thj-case (1.2 °C/W)	Limited to ≤120 A continuous due to thermal constraints; unsuitable for >200 A PCB-mounted designs	Prefer when legacy through-hole assembly or lower gate charge (71 nC) is prioritized over current density
IXFN300N10P	R_DS(on) = 1.1 mΩ @ 10 V; TO-264 package; 100 V rating; higher Q_g (220 nC)	Supports higher bus voltages but increases switching loss in 40 V systems; larger footprint and cost	Choose only if system requires 100 V blocking margin or existing TO-264 heatsink reuse is mandatory

Compared with IRFB4115PBF and IXFN300N10P, STV270N4F3 delivers optimal trade-off for 40 V, >200 A surface-mount applications-offering lowest R_DS(on) per mm², smallest thermal resistance, and PowerSO-10's superior current-handling PCB interface.

Availability

STV270N4F3 is available at Aetrix Electronics and suitable for high-current DC-DC converters, motor drive inverters, automotive starter circuits, and industrial UPS output stages requiring stable component supply and long-term production continuity.

Supply support for STV270N4F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.

STV270N4F3 belongs to the STripFET™ III Power MOSFET product line, engineered specifically for ultra-low R_DS(on) and high-current switching in compact, thermally demanding power conversion systems.

FAQ

What is the maximum allowable gate-source voltage for STV270N4F3?

The absolute maximum V_GS rating is ±20 V. Exceeding this value risks permanent gate oxide damage. Recommended operating range is –10 V to +15 V for reliable turn-off and turn-on, with 10 V gate drive used for R_DS(on) specification. Gate driver circuits must include clamping or Zener protection to prevent transient overshoot.

Can STV270N4F3 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) ensures inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared thermal interface. Derate total current by 15% per additional device beyond two units to account for layout-induced imbalances and thermal coupling.

Is the source-drain diode suitable for freewheeling in synchronous rectifiers?

The integrated body diode has 1.3 V forward voltage at 80 A and 70 ns reverse recovery time at 150 °C, making it usable for low-frequency freewheeling. However, for >100 kHz synchronous rectification, external Schottky diodes or complementary MOSFETs are recommended to avoid recovery-related switching loss and EMI.

What PCB layout practices maximize thermal performance for PowerSO-10?

Maximize copper area under the exposed drain pad using ≥2 oz Cu, multiple thermal vias (≥12 × 0.3 mm) to inner ground/power planes, and direct connection to heatsink or chassis. Keep gate traces short and shielded from drain switching noise; separate high-current source/drain paths to minimize loop inductance and voltage spikes.

STV270N4F3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: PowerSO-10 Exposed Bottom Pad

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 270A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 10-PowerSO

STV270N4F3 FAQ

1.How can I place an order for STV270N4F3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STV270N4F3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STV270N4F3 reliable?

The price and inventory of STV270N4F3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STV270N4F3 is usually 5 days.

3.What payment methods are accepted for STV270N4F3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STV270N4F3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STV270N4F3?

STV270N4F3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STV270N4F3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STV270N4F3?

For technical support, including STV270N4F3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STV270N4F3 requirements.

6.How does Aetrix verify that STV270N4F3 is sourced from the original manufacturer or authorized distributors?

All STV270N4F3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STV270N4F3 meets industry standards.

7.What is the process for return or replacement of STV270N4F3?

All STV270N4F3 units undergo pre-shipment inspection (PSI). If there is an issue with STV270N4F3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STV270N4F3 part is unused and in its original packaging.

Return procedure for STV270N4F3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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