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STMicroelectronics STW10N105K5
- Part No.:
- STW10N105K5
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
STW10N105K5.pdf
- Description:
- MOSFET N-CH 1050V 6A TO247
- Quantity:
- Payment:
- Shipping:
Inventory:8,703
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Product details
Overview
STW10N105K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET using MDmesh K5 technology, rated for 1050 V VDS, 1.0 Ω typical RDS(on), and 6 A continuous drain current in TO-247 package. It features ultra-low gate charge (21.5 nC), 100% avalanche tested operation, and Zener-protected gate, targeting high-efficiency switching in industrial HVDC power supplies.
For engineers reviewing the STW10N105K5 datasheet, STW10N105K5 pinout, STW10N105K5 application, or STW10N105K5 equivalent, key selection criteria include its 1050 V breakdown voltage, 2.5 kV insulation withstand rating, 50 V/ns MOSFET dv/dt ruggedness, and 140 mJ single-pulse avalanche energy - all critical for reliable operation in flyback, resonant, and PFC stages.
Technical Context
This device implements a proprietary vertical MDmesh K5 structure to minimize conduction and switching losses simultaneously. Its 545 pF input capacitance and 15.5 nC gate-drain charge enable fast, controlled turn-on/turn-off with low EMI generation under hard-switching conditions at up to 840 V bus voltage.
The integrated source-drain diode exhibits 345 ns reverse recovery time and 3.53 µC Qrr at 25 °C, supporting quasi-resonant and zero-voltage switching topologies. Thermal resistance RthJC of 0.96 °C/W (TO-247) ensures effective junction-to-case heat transfer under sustained 6 A conduction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 1050 V - supports DC bus voltages up to 840 V with 25% safety margin in PFC and offline SMPS |
| RDS(on) typ. | 1.0 Ω - enables <1 W conduction loss at 3 A, critical for high-power density designs |
| Qg | 21.5 nC - reduces gate drive power and allows use of smaller, lower-cost drivers |
| EAS | 140 mJ - guarantees robust unclamped inductive switching without external snubbers |
| dv/dt ruggedness | 50 V/ns - prevents spurious turn-on during high-slew-rate transients in bridge configurations |
| VISO | 2.5 kV RMS - permits direct mounting on insulated heatsinks in Class I safety systems |
| TJ max | 150 °C - supports operation in sealed industrial enclosures without forced air cooling |
Pinout & Package
STW10N105K5 is housed in a TO-247 package with isolated tab (pin 3), offering superior thermal performance (RthJC = 0.96 °C/W) and creepage/clearance compliance for high-voltage isolation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; accepts 10 V logic-level drive; Zener-protected to ±20 V |
| Pin 2 (D) | Drain | Main high-side switching node; connected to HV DC bus; electrically tied to metal tab |
| Pin 3 (S) | Source | Power return path; referenced to driver ground; low-inductance layout essential for dV/dt immunity |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate charge | 21.5 nC total charge enables <100 ns turn-off with 4.7 Ω gate resistor at 10 V drive |
| Zener-protected gate | Integrated 30 V gate-source clamp eliminates need for external TVS in most gate-drive circuits |
| 100% avalanche tested | Every unit validated for 2 A repetitive avalanche current and 140 mJ single-pulse energy |
| MDmesh K5 vertical structure | Reduces specific RDS(on) by >40% vs prior K3/K4 generations, improving power density |
| Low Crss / high Ciss ratio | 1.3 pF reverse transfer capacitance minimizes Miller effect, enabling stable high-frequency operation |
Applications
| Industrial PFC Boost Converter | High-Voltage Flyback SMPS |
|---|---|
|
Use Scenario: 3.3 kW active PFC stage operating at 70 kHz with 800 V DC link. IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost topology. Use Value: 1.0 Ω RDS(on) and 21.5 nC Qg reduce total losses by 18% vs comparable 1200 V Si devices, enabling >98.2% efficiency. |
Use Scenario: 1.2 kW medical-grade isolated power supply with reinforced insulation. IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback with valley-switching control. Use Value: 50 V/ns dv/dt ruggedness and 2.5 kV VISO eliminate need for additional isolation barriers or snubbers. |
| Resonant LLC Half-Bridge | EV Charger DC-DC Stage |
|
Use Scenario: 6.6 kW on-board charger LLC resonant converter primary switch. IC Role / Device Role / Timing Role: High-side switch in asymmetric half-bridge configuration with ZVS operation. Use Value: 345 ns trr and low Qrr (3.53 µC) minimize dead-time losses and improve ZVS window stability across temperature. |
Use Scenario: 22 kW DC fast-charging station secondary-side HV-HV isolation stage. IC Role / Device Role / Timing Role: Switching element in dual-active-bridge (DAB) converter primary leg. Use Value: 150 °C TJ max and 0.96 °C/W RthJC support 100% load at 55 °C ambient without derating in compact liquid-cooled modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTH10N100 | 1000 V VDS, 1.2 Ω RDS(on), 25 nC Qg, TO-247 package | Lower voltage rating limits use to ≤650 V bus; higher Qg increases gate drive loss | Prefer where cost sensitivity outweighs 50 V margin and efficiency targets are relaxed |
| IPP60R190C7 | 650 V VDS, 0.19 Ω RDS(on), 39 nC Qg, TO-220 package | Insufficient voltage rating for 800 V+ systems; unsuitable for direct replacement without topology change | Only viable if redesigning to lower bus voltage and accepting larger die area per watt |
Compared with IXTH10N100 and IPP60R190C7, STW10N105K5 uniquely delivers 1050 V capability with sub-22 nC gate charge and 140 mJ avalanche energy - enabling single-device solutions in 800–1000 V systems without trade-offs in ruggedness or thermal performance.
Availability
STW10N105K5 is available at Aetrix Electronics and suitable for industrial PFC converters, high-voltage flyback SMPS, resonant LLC half-bridges, and EV charger DC-DC stages requiring stable component supply and long-term lifecycle assurance.
Supply support for STW10N105K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs with over 45 years of industrial reliability heritage.
STW10N105K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for ultra-high-efficiency, high-power-density switching applications in industrial, medical, and renewable energy systems.
FAQ
What is the maximum recommended gate drive voltage for STW10N105K5?
The absolute maximum gate-source voltage is ±30 V, but ST specifies 10 V as the optimal drive level for full enhancement while maintaining safe margin against gate oxide stress. Driving above 12 V yields negligible RDS(on) improvement (<2%) and increases risk of gate leakage degradation over time.
Does STW10N105K5 require an external gate resistor for stability?
Yes - a minimum 4.7 Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance interacting with 7 Ω intrinsic gate resistance and 545 pF input capacitance. Lower values risk oscillation during fast transitions, especially with high-current gate drivers.
Can STW10N105K5 be used in parallel configurations?
Parallel operation is not recommended due to positive temperature coefficient of RDS(on) being insufficient to ensure current sharing across units. Mismatches in threshold voltage (3–5 V range) and dynamic parameters cause unequal current distribution, risking thermal runaway above 3 A per device.
What is the meaning of "100% avalanche tested" in the datasheet?
Each STW10N105K5 undergoes individual production testing for single-pulse avalanche energy at 140 mJ and repetitive avalanche current at 2 A, verifying robustness under unclamped inductive switching events - eliminating need for statistical screening or derating in mission-critical applications.
STW10N105K5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh K5
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 1050 V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.3Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 21.5 nC @ 10 V
- Vgs (Max):
- 30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 545 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 130W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247-3
STW10N105K5 FAQ
1.How can I place an order for STW10N105K5 through Aetrix?
Please submit a Request for Quotation (RFQ) for STW10N105K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STW10N105K5 reliable?
The price and inventory of STW10N105K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW10N105K5 is usually 5 days.
3.What payment methods are accepted for STW10N105K5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW10N105K5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STW10N105K5?
STW10N105K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STW10N105K5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STW10N105K5?
For technical support, including STW10N105K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW10N105K5 requirements.
6.How does Aetrix verify that STW10N105K5 is sourced from the original manufacturer or authorized distributors?
All STW10N105K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW10N105K5 meets industry standards.
7.What is the process for return or replacement of STW10N105K5?
All STW10N105K5 units undergo pre-shipment inspection (PSI). If there is an issue with STW10N105K5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STW10N105K5 part is unused and in its original packaging.
Return procedure for STW10N105K5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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