STMicroelectronics STW10N95K5

Overview

STW10N95K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET based on MDmesh K5 technology, designed for primary-side switching in offline SMPS, PFC stages, and industrial HV DC-DC converters. It delivers 950 V V_(BR)DSS, 650 mΩ typ. R_DS(on) at V_GS = 10 V, 8 A continuous drain current at T_C = 25 °C, and is housed in a TO-247 package with insulated leads rated for 2.5 kV RMS isolation.

For engineers reviewing the STW10N95K5 datasheet, STW10N95K5 pinout, STW10N95K5 application, or STW10N95K5 equivalent, this page provides verified electrical ratings, thermal performance data, gate charge behavior, avalanche ruggedness metrics, and real-world switching timing under 475 V/4 A resistive load conditions - all critical for high-reliability 800 V-class power stage design.

Technical Context

This device employs ST's proprietary vertical MDmesh K5 structure to achieve ultra-low figure of merit (R_DS(on) × Q_g), enabling high power density in hard-switched topologies. Its Zener-protected gate ensures robustness against transient overvoltage, while 100% unclamped inductive avalanche testing validates energy handling up to 122 mJ per pulse.

The MOSFET features low C_iss (630 pF typ.), minimal C_rss (0.6 pF typ.), and fast switching: t_d(on) = 22 ns, t_f = 15 ns with 4.7 Ω gate resistance. Its dv/dt ruggedness is rated at 50 V/ns under V_DD ≤ 760 V, supporting stable operation in noisy high-voltage environments.

Key Specifications

Pinout & Package

STW10N95K5 uses the TO-247 package with insulated leads (no metal tab connection to drain). The case is electrically isolated from all terminals, enabling direct heatsink mounting without thermal pads or insulators while maintaining 2.5 kV RMS isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Compared with STP10N95K5, STW10N95K5 offers 4.4× better thermal resistance and certified isolation; versus IXTH10N90L2, it delivers 25% lower R_DS(on), 37% less Q_g, and 44% higher E_AS - directly enabling higher power density and reduced system-level cooling overhead.

Availability

STW10N95K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom rectifier modules, and EV charger front-end stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STW10N95K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontrollers for industrial, automotive, and consumer markets.

STW10N95K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-density offline SMPS and industrial HV power conversion where low FoM and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current for STW10N95K5 at T_C = 100 °C is 5 A, as specified in Table 1 of DS9774 Rev 4. This rating is limited by junction temperature (T_J ≤ 150 °C) and accounts for thermal derating across the SOA boundary. Operation above this current requires active cooling or pulsed duty cycling.

Does STW10N95K5 require an external gate Zener diode?

No. STW10N95K5 integrates a monolithic Zener diode between gate and source, clamping V_GS to ±30 V. This eliminates the need for external gate protection in standard gate-driver configurations, provided the driver output impedance and PCB layout limit overshoot within datasheet-specified dv/dt limits.

Can STW10N95K5 be used in synchronous rectification topologies?

No. STW10N95K5 is optimized as a high-side switch with a body diode characterized for freewheeling (V_SD = 1.5 V at 8 A), but it lacks the low forward voltage and fast recovery needed for efficient synchronous rectification. Its trr = 404 ns and Q_rr = 5.2 µC make it unsuitable as a low-side SR FET in high-frequency converters.

What is the safe operating area (SOA) limitation at 10 ms pulse width?

At 10 ms pulse width and T_C = 25 °C, the SOA is limited by R_DS(on) to approximately 1 A at 950 V, per Figure 5 in DS9774. This reflects the device's ability to sustain high V_DS × I_D product without thermal runaway, validated through unclamped inductive testing and SOA curve modeling.