STMicroelectronics STW10NK80Z

Overview

STW10NK80Z from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated for 800 V drain-source voltage, 780 mΩ typical R_DS(on), and 9 A continuous drain current at T_C = 25 °C in TO-247 package. It delivers high dv/dt capability and 100% avalanche-tested ruggedness for high-voltage switching in offline SMPS and industrial motor drives.

For engineers reviewing the STW10NK80Z datasheet, STW10NK80Z pinout, STW10NK80Z application, or STW10NK80Z equivalent, key selection criteria include its 4.5 V gate threshold, 72 nC total gate charge, 290 mJ single-pulse avalanche energy, and TO-247 thermal resistance of 0.78 °C/W - all critical for hard-switched flyback and resonant converter designs.

Technical Context

This device implements ST's SuperMESH process - an optimized evolution of PowerMESH - to reduce on-resistance while maintaining high voltage blocking and fast diode recovery (t_rr = 645 ns at 150 °C). Its Zener-protected gate ensures ±30 V V_GS tolerance and 4 kV HBM ESD robustness.

The MOSFET supports unclamped inductive switching with guaranteed 9 A repetitive avalanche current and operates across –55 to 150 °C junction temperature. Its C_oss,eq of 105 pF (0–640 V) and low Crss (38 pF) minimize capacitive losses during high-frequency transitions.

Key Specifications

Pinout & Package

STW10NK80Z is housed in a TO-247 package with isolated tab (drain-connected), offering low thermal resistance (0.78 °C/W) and high-power handling. The case is electrically connected to the drain terminal, requiring insulated mounting in floating-drain configurations.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP10NK80Z and IPP60R190C7, STW10NK80Z uniquely combines 800 V rating, integrated Zener gate protection, and guaranteed avalanche ruggedness - making it the only choice for 400 VAC-input, high-reliability industrial converters where overvoltage transients and inductive energy absorption are non-negotiable.

Availability

STW10NK80Z is available at Aetrix Electronics and suitable for industrial motor drives, telecom SMPS, induction heating systems, and EV onboard chargers requiring stable component supply across long production lifecycles.

Supply support for STW10NK80Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STW10NK80Z belongs to the SuperMESH Power MOSFET product line, engineered specifically for high-voltage, high-ruggedness switching in offline power conversion - emphasizing avalanche survivability, dv/dt immunity, and Zener gate protection.

FAQ

Is STW10NK80Z pin-compatible with STP10NK80Z?

Yes - both share identical 3-pin lead configuration (G-D-S) and pin numbering (1-G, 2-D, 3-S) per JEDEC TO-247 and TO-220 outlines. However, STW10NK80Z's TO-247 tab is larger and thermally optimized; mechanical mounting differs, and thermal design must reflect R_thJC = 0.78 °C/W versus 3.1 °C/W for TO-220.

What is the maximum recommended gate resistor value for reliable switching?

A gate resistor ≤ 10 Ω is recommended to ensure full 72 nC charge delivery within 100 ns and prevent oscillation. At 100 kHz operation, gate drive power is ~0.72 W (Q_g × f × V_GS); use a 1 W resistor with low-inductance layout to avoid ringing-induced false turn-on.

Does STW10NK80Z require external gate protection?

No - it integrates a monolithic Zener diode between gate and source, rated for ±30 V V_GS and tested to 4 kV HBM ESD. External TVS or RC snubbers are unnecessary unless extreme board-level transients (>100 V/ns) are present, which would exceed device specification limits.

Can STW10NK80Z replace STW20NK50Z in a 500 V design?

No - STW20NK50Z is a 500 V, 20 A device with different die size, R_DS(on) (0.22 Ω), and gate charge (110 nC). STW10NK80Z offers higher voltage rating (800 V) but lower current (9 A) and lower Q_g; substituting it risks excessive conduction loss and thermal runaway in 500 V/20 A applications.