STMicroelectronics STW11NB80

Overview

STW11NB80 from STMicroelectronics is an N-channel 800 V, 11 A PowerMESH™ MOSFET in TO-247 package with R_DS(on) = 0.65 Ω (typ), ±30 V gate rating, and 100% avalanche tested for ruggedness-used in high-voltage SMPS and welding inverters.

For engineers reviewing the STW11NB80 datasheet, STW11NB80 pinout, STW11NB80 application, or STW11NB80 equivalent, key selection criteria include its 800 V V_DSS, low 0.65 Ω R_DS(on), 4 V/ns dv/dt capability, 70 nC total gate charge, and TO-247 thermal performance (R_thj-case = 0.66 °C/W).

Technical Context

This MOSFET employs ST's proprietary MESH OVERLAY™ process with strip layout and edge termination to minimize R_DS(on)/area and maximize avalanche robustness. It delivers high-speed switching via low intrinsic capacitances (C_iss = 2900 pF, C_rss = 33 pF) and minimized gate charge (Q_g = 70 nC).

The device supports unclamped inductive switching up to 11 A repetitive avalanche current and 500 mJ single-pulse energy. Its source-drain diode exhibits 1.6 V forward voltage at 11 A and 900 ns reverse recovery time under 100 A/µs di/dt at 150 °C junction temperature.

Key Specifications

Pinout & Package

TO-247 package: isolated tab (drain), three leads - pin 1 (gate), pin 2 (drain), pin 3 (source). Mounting requires electrically insulated heatsink interface due to drain-connected tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW12NK80Z, STW11NB80 trades 0.07 Ω higher R_DS(on) for 180 mJ greater avalanche energy and proven field reliability in welding equipment; IPP80N08S2L-07 is electrically incompatible due to 75 V rating.

Availability

STW11NB80 is available at Aetrix Electronics and suitable for industrial welding inverters, uninterruptible power supplies, and high-voltage SMPS requiring stable component supply and long-term design continuity.

Supply support for STW11NB80 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices.

The STW11NB80 belongs to ST's PowerMESH™ high-voltage MOSFET family, engineered specifically for rugged, high-efficiency switching in industrial power conversion where avalanche endurance and dv/dt immunity are critical.

FAQ

Is STW11NB80 still in active production?

No-STW11NB80 is marked obsolete in ST's official documentation (dated July 1999). However, Aetrix Electronics maintains legacy inventory with full traceability and offers engineering support for redesign evaluation and cross-reference alternatives.

Can STW11NB80 be used with 15 V gate drive?

Yes-its gate threshold voltage is 3–5 V and maximum rated V_GS is ±30 V, so 15 V drive is within specification. Using 15 V instead of 10 V further reduces R_DS(on) and improves switching speed, provided gate driver can source/sink ≥2 A peak current.

What is the safe operating area (SOA) limitation at 100 °C case temperature?

At T_c = 100 °C, the continuous drain current is derated to 6.9 A. The SOA curve (in datasheet Fig. 7) shows that pulsed operation up to 44 A is permitted only for pulse widths ≤300 µs and duty cycle ≤1.5%, with V_DD ≤ 800 V and T_j ≤ 150 °C.

Does the TO-247 package require thermal compound when mounted to a heatsink?

Yes-thermal interface material (e.g., silicone-based grease or phase-change pad) is mandatory between the isolated drain tab and heatsink to achieve the specified R_thj-case = 0.66 °C/W. Omitting it risks junction overheating, especially above 50 W dissipation.