STMicroelectronics STW120NF10

Overview

STW120NF10 from STMicroelectronics is an N-channel 100 V, 9.0 mΩ typ. R_DS(on), 110 A continuous drain current Power MOSFET in TO-247 package, designed for high-efficiency primary-side switching in isolated DC-DC converters for telecom and server power supplies. It features 100% avalanche tested ruggedness, exceptional dv/dt capability (10 V/ns), and low gate charge (172 nC typ.) to reduce driver losses.

For engineers reviewing the STW120NF10 datasheet, STW120NF10 pinout, STW120NF10 application, or STW120NF10 equivalent, key selection criteria include its 100 V V_DS, 9.0 mΩ R_DS(on) at V_GS = 10 V, 172 nC total gate charge, 550 mJ single-pulse avalanche energy, and TO-247 thermal resistance of 0.48 °C/W junction-to-case - critical for high-power hard-switching topologies.

Technical Context

This STripFET™ II MOSFET employs a planar trench-gate structure optimized for low input capacitance (C_iss = 5200 pF) and minimized gate charge, enabling fast switching with reduced driver power demand. Its 100% avalanche-tested construction ensures robustness under unclamped inductive load conditions.

The device operates across –55 °C to 175 °C junction temperature range and delivers 312 W total dissipation at T_C = 25 °C. Its source-drain diode exhibits 1.3 V forward voltage at 120 A and 152 ns reverse recovery time at 150 °C, supporting synchronous rectification and freewheeling roles in high-frequency SMPS.

Key Specifications

Pinout & Package

STW120NF10 is housed in a TO-247 package with three terminals: Drain (Tab), Gate (Pin 1), and Source (Pin 3). The metal tab is electrically connected to the Drain, requiring isolation when mounted to heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 100 V Power MOSFET applications.

Compared with IXFH110N10P and IRFP4668, STW120NF10 offers the optimal balance of low Q_g (172 nC), proven avalanche ruggedness (550 mJ), and industry-standard TO-247 thermal performance (0.48 °C/W), making it preferred for telecom and server SMPS where reliability and driver simplicity are prioritized.

Availability

STW120NF10 is available at Aetrix Electronics and suitable for telecom rectifier modules, server power supply primary switches, and industrial UPS inverter stages requiring stable component supply and long-term production continuity.

Supply support for STW120NF10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs with vertical manufacturing capabilities.

STW120NF10 belongs to the STripFET™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability primary-side switching in telecom and computing power supplies operating above 100 kHz.

FAQ

Is STW120NF10 suitable for synchronous rectification?

Yes - its 1.3 V source-drain forward voltage at 120 A and 152 ns reverse recovery time at 150 °C make it viable for secondary-side synchronous rectification in high-current, high-frequency DC-DC converters. Layout must minimize source inductance to avoid shoot-through during body-diode conduction.

What is the maximum recommended gate resistor for hard-switching applications?

For 300 kHz hard-switching with 10 V gate drive, a 4.7 Ω gate resistor is validated per Figure 13 in the datasheet, yielding 25 ns turn-on delay and 68 ns fall time. Lower values (≤2.2 Ω) may be used with ≥2 A peak gate drivers to further reduce switching losses.

Does STW120NF10 require a negative gate turn-off voltage?

No - the device specifies ±20 V gate-source voltage rating but operates reliably with 0 V to +10 V or +12 V gate drive. Negative turn-off is not required due to its low Crss (325 pF) and high dv/dt immunity (10 V/ns), which suppress Miller-induced false turn-on.

Can STW120NF10 replace STP120NF10 in existing TO-220 designs?

No - STW120NF10 uses TO-247 packaging with different mechanical footprint, thermal interface, and drain-tab orientation. Direct replacement requires PCB redesign, heatsink requalification, and thermal validation due to higher power density and altered R_thj-case (0.48 vs 0.48 °C/W same value but different mounting mechanics).