STMicroelectronics STW12N120K5

Overview

STW12N120K5 from STMicroelectronics is a 1200 V, 12 A N-channel high-voltage Power MOSFET based on MDmesh K5 technology, featuring 620 mΩ typ. R_DS(on), 44.2 nC total gate charge, and 100% avalanche tested. It operates in TO-247 package for industrial switching power supplies, PFC stages, and HV DC-DC converters requiring high efficiency and ruggedness.

For engineers reviewing the STW12N120K5 datasheet, STW12N120K5 pinout, STW12N120K5 application, or STW12N120K5 equivalent, key selection criteria include its 1200 V breakdown voltage, ultra-low gate charge for fast switching, Zener-protected gate, and 215 mJ single-pulse avalanche energy - critical for overvoltage resilience in hard-switched topologies.

Technical Context

This MOSFET employs ST's proprietary MDmesh K5 vertical structure to achieve a low figure of merit (R_DS(on) × Q_g = 27.5 Ω·nC), enabling high power density in space-constrained HV designs. Its 50 V/ns MOSFET dv/dt ruggedness and 4.5 V/ns diode recovery dv/dt rating support reliable operation under fast transient conditions.

The integrated body diode exhibits 1.5 V forward voltage at 12 A and 630 ns reverse recovery time at 25 °C, with Q_rr = 12.6 μC - optimized for reduced switching loss in continuous conduction mode (CCM) PFC and resonant LLC secondaries.

Key Specifications

Pinout & Package

STW12N120K5 is housed in TO-247 package with 3 leads: Drain (Tab), Gate (Lead 1), Source (Lead 3). The metal tab is electrically connected to Drain and serves as primary thermal path to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Compared with IXTH12N120 and IPP120N12N3, STW12N120K5 uniquely combines 1200 V rating, Zener gate protection, and lowest FoM in its class - making it optimal for compact, high-reliability industrial power conversion where voltage margin and ruggedness are non-negotiable.

Availability

STW12N120K5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, three-phase PFC front-ends, and solar microinverters requiring stable component supply across multi-year production cycles.

Supply support for STW12N120K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STW12N120K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-density industrial power conversion systems operating above 800 V DC bus.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW12N120K5 supports 7.6 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS8621 Rev 6. This derating reflects thermal limitations of the TO-247 package with R_thJC = 0.5 °C/W, requiring adequate heatsinking to maintain junction temperature below 150 °C under sustained load.

Does STW12N120K5 have an integrated body diode, and what are its key recovery parameters?

Yes, it features a monolithic source-drain diode rated for 12 A continuous and 48 A pulsed current. At 25 °C, its reverse recovery time is 630 ns with Q_rr = 12.6 μC and I_RRM = 40 A under standard test conditions (ISD = 12 A, di/dt = 100 A/μs, VDD = 60 V), per Table 7 in the datasheet.

Can STW12N120K5 be used in parallel configurations, and what layout considerations apply?

Parallel operation is feasible due to its positive R_DS(on) temperature coefficient, which promotes current sharing. Critical layout requirements include matched gate trace lengths (<5 mm difference), individual 10 Ω gate resistors, Kelvin-source connections, and symmetrical thermal mounting to avoid thermal runaway - all confirmed in ST application note AN4379.

Is STW12N120K5 compliant with RoHS and REACH regulations?

Yes, STW12N120K5 is manufactured in ST's ECOPACK2-compliant TO-247 package, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, with lead-free terminations and halogen-free molding compound, as documented in ST's official ECOPACK declaration.