STMicroelectronics STW12N150K5

Overview

STW12N150K5 from STMicroelectronics is a 1500 V, 7 A N-channel power MOSFET in TO-247 package, fabricated with MDmesh K5 vertical structure technology. It delivers 1.6 Ω typical R_DS(on), 47 nC total gate charge, and 100% avalanche-tested ruggedness for high-voltage switching in industrial SMPS, HV DC-DC converters, and arc ignition systems.

For engineers reviewing the STW12N150K5 datasheet, STW12N150K5 pinout, STW12N150K5 application, or STW12N150K5 equivalent, key selection criteria include its 50 V/ns MOSFET dv/dt ruggedness, 900 mJ single-pulse avalanche energy, 1.9 Ω max R_DS(on), Zener-protected gate, and ultra-low FoM (R_DS(on) × Q_g = 89.3 Ω·nC).

Technical Context

This device employs ST's MDmesh K5 proprietary vertical superjunction architecture to minimize conduction and switching losses simultaneously. Its 1360 pF input capacitance and 0.7 pF reverse transfer capacitance enable fast, controlled turn-on/turn-off with low EMI generation under hard-switching conditions at up to 1200 V bus voltage.

The integrated source-drain diode exhibits 302 ns reverse recovery time and 3.71 µC Q_rr at 25 °C, supporting quasi-resonant and LLC topologies. The 0.5 °C/W junction-to-case thermal resistance allows sustained 7 A continuous operation at T_C = 25 °C with adequate heatsinking.

Key Specifications

Pinout & Package

TO-247 package: isolated metal tab (Drain), center lead (Gate), right lead (Source) - standard 3-lead through-hole outline with 0.5 °C/W R_thJC and ECOPACK-compliant lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW20N150K5 and IXTH12N150, STW12N150K5 offers the lowest FoM (89.3 Ω·nC) and built-in gate protection-critical for new designs targeting compact, robust, high-frequency HV switching without added protection components.

Availability

STW12N150K5 is available at Aetrix Electronics and suitable for industrial SMPS, high-voltage DC-DC converters, and arc ignition systems requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for STW12N150K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STW12N150K5 belongs to the MDmesh K5 high-voltage power MOSFET product line, engineered specifically for efficiency-critical 1–5 kW industrial power conversion where low R_DS(on), low Q_g, and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW12N150K5 supports 4 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11038 Rev 4. This derating reflects thermal limitations of the TO-247 package and silicon die, requiring appropriate heatsinking to maintain safe junction temperature below 150 °C under sustained load.

Does this MOSFET include an integrated body diode, and what are its key recovery parameters?

Yes, STW12N150K5 integrates a source-drain diode rated for 7 A continuous and 28 A pulsed current. At 25 °C, it exhibits 302 ns reverse recovery time (t_rr), 3.71 µC reverse recovery charge (Q_rr), and 24.6 A peak reverse recovery current (I_RRM) under standard test conditions (ISD = 7 A, di/dt = 100 A/µs, VDD = 60 V).

Can STW12N150K5 be used in zero-voltage switching (ZVS) topologies?

Yes - its low 80 pF C_oss and 32 pF Co(er) (energy-related output capacitance) enable predictable resonant tank behavior in LLC and phase-shifted full-bridge converters. The 1200 V-rated dv/dt ruggedness and 47 nC Q_g support clean ZVS transitions up to 300 kHz with proper gate drive timing and snubber design.

Is the TO-247 package lead-free and RoHS compliant?

Yes, STW12N150K5 is supplied in an ECOPACK2-compliant TO-247 package, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. ST confirms lead-free termination finish and halogen-free molding compound per manufacturer documentation DS11038 Rev 4 Section 4.