STMicroelectronics STW12N170K5

Overview

STW12N170K5 from STMicroelectronics is a 1700 V, 5 A N-channel high-voltage Power MOSFET in TO-247 package, fabricated with MDmesh K5 vertical structure technology. It delivers 2.3 Ω typ. R_DS(on), 37 nC total gate charge, and Zener-protected gate, targeting ultra-high-voltage switching in industrial HVDC converters and solid-state circuit breakers.

For engineers reviewing the STW12N170K5 datasheet, STW12N170K5 pinout, STW12N170K5 application, or STW12N170K5 equivalent, key selection criteria include its 1700 V V_(BR)DSS, 2.9 Ω max R_DS(on), 250 W P_TOT, 50 V/ns dv/dt ruggedness, and built-in gate-source Zener diodes for ESD robustness.

Technical Context

This device employs ST's MDmesh K5 proprietary vertical superjunction architecture to achieve industry-leading R_DS(on) × area and figure of merit (FoM), enabling higher power density in space-constrained HV designs. Its ultra-low Q_g (37 nC) and low C_iss (1380 pF) reduce switching losses and gate drive requirements.

The integrated back-to-back gate-source Zener diodes provide ±30 V V_(BR)GSO clamping without external components, while its 1.7 A repetitive avalanche rating (E_AS = 1000 mJ) supports unclamped inductive switching reliability in hard-switched topologies.

Key Specifications

Pinout & Package

TO-247 package: isolated tab (Drain), 3-pin through-hole mounting with standard footprint. Tab is electrically connected to Drain (Pin 2), Gate (Pin 1), Source (Pin 3).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IXTH12N170 and STW20N170, STW12N170K5 offers optimal balance of low R_DS(on), minimal Q_g, and integrated gate protection-making it ideal for compact, high-frequency, high-reliability HV switching where board space and component count are constrained.

Availability

STW12N170K5 is available at Aetrix Electronics and suitable for industrial HVDC converters, solid-state circuit breakers, high-voltage induction heating systems, and EV charging infrastructure requiring stable component supply and long-term lifecycle assurance.

Supply support for STW12N170K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

The MDmesh K5 product line targets ultra-high-voltage power conversion, delivering best-in-class R_DS(on) × area and FoM for next-generation energy infrastructure, grid-tied inverters, and solid-state protection systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW12N170K5 supports 3 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12847 Rev 2. This derating reflects thermal limits of the TO-247 package and ensures safe operation within the SOA boundary at elevated ambient temperatures in enclosed power cabinets.

Does this MOSFET include an integrated body diode, and what are its recovery characteristics?

Yes, STW12N170K5 features an intrinsic source-drain body diode rated for 5 A continuous and 10 A pulsed current. At T_J = 25 °C, it exhibits 350 ns reverse recovery time (t_rr) and 3.91 µC reverse recovery charge (Q_rr) under 5 A, 60 V, 100 A/µs di/dt conditions-key for minimizing commutation losses in synchronous rectification and active clamp circuits.

Can STW12N170K5 be used in avalanche mode, and what are the validated energy limits?

Yes, STW12N170K5 is characterized for repetitive and single-pulse avalanche operation. Per Table 3, it supports 1.7 A avalanche current with 1000 mJ single-pulse energy at T_J = 25 °C (V_DD = 50 V). This capability is validated per JEDEC JESD24-11 and enables robustness in unclamped inductive switching without external snubbers.

Is the TO-247 package lead-free and RoHS-compliant?

Yes, STW12N170K5 is supplied in an ECOPACK2-compliant TO-247 package, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The device carries the "E2" marking per ST's ECOPACK specification, confirming lead-free terminations and halogen-free molding compound.