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STMicroelectronics STW12NK80Z
- Part No.:
- STW12NK80Z
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
STW12NK80Z.pdf
- Description:
- MOSFET N-CH 800V 10.5A TO247-3
- Quantity:
- Payment:
- Shipping:
Inventory:295
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Product details
Overview
STW12NK80Z from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated for 800 V drain-source voltage, 585 mΩ typical on-resistance at VGS = 10 V and ID = 5.25 A, and 10.5 A continuous drain current at TC = 25 °C. It delivers high dv/dt capability (4.5 V/ns), 100% avalanche tested ruggedness, and low gate charge (87 nC) for hard-switching in high-voltage offline SMPS and industrial motor drives.
For engineers reviewing the STW12NK80Z datasheet, STW12NK80Z pinout, STW12NK80Z application, or STW12NK80Z equivalent, this device is selected for high-reliability 800 V switching where ESD robustness (4 kV HBM), low Ciss (2620 pF), and Zener-protected gate integrity are critical in flyback, PFC, and half-bridge topologies.
Technical Context
This MOSFET employs ST's SuperMESH process - an evolution of PowerMESH - to reduce RDS(on) while maintaining high voltage blocking and fast switching. Its intrinsic Zener diode across gate-source provides built-in overvoltage protection without external components.
The device exhibits low reverse recovery charge (Qrr = 5.9 µC) and fast trr (635 ns) under high di/dt (100 A/µs), enabling efficient operation in inductive load switching with minimal snubber losses. Thermal resistance RthJC is 0.66 °C/W in TO-247, supporting high-power dissipation up to 190 W at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 800 V - Enables direct use in 400 V AC mains-derived systems with ≥2× safety margin against transients. |
| RDS(on) typ. | 585 mΩ at VGS = 10 V, ID = 5.25 A - Delivers low conduction loss in high-voltage DC-DC converters operating at <11 A peak. |
| Qg | 87 nC - Reduces gate drive power requirement and enables faster turn-on with standard 1–2 A peak drivers. |
| dv/dt rating | 4.5 V/ns - Sustains rapid voltage transitions during hard switching without spurious turn-on in high-noise environments. |
| EAS | 400 mJ - Withstands single-pulse inductive energy events (e.g., transformer leakage spikes) without failure. |
| Ciss | 2620 pF - Low input capacitance minimizes Miller effect and improves gate control stability at high frequencies. |
| TJ max | 150 °C - Supports operation in sealed enclosures or high-ambient industrial settings with proper heatsinking. |
Pinout & Package
STW12NK80Z is housed in a TO-247 package with isolated tab (drain-connected). The case is electrically insulated from the heat sink per VISO = 2.5 kV RMS, enabling safe mounting without insulating pads in high-isolation designs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Lead) | Gate (G) | Control terminal; accepts 0–10 V logic-level drive; protected by integrated Zener diode (±30 V rating). |
| 2 (Lead) | Drain (D) | Main high-side switching node; connected to internal die substrate and metal tab; requires isolation from heatsink unless floating. |
| 3 (Lead) | Source (S) | Return path for load current; referenced to driver ground; forms common node with gate drive return in half-bridge configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Zener-protected gate | Integrated bidirectional Zener clamps gate-source to ±30 V, eliminating need for external TVS in cost-sensitive designs. |
| 100% avalanche tested | Every unit undergoes unclamped inductive switching stress test to 10.5 A, ensuring field reliability in overload conditions. |
| Extremely high dv/dt capability | Rated 4.5 V/ns with ISD ≤ 10.5 A and di/dt ≤ 200 A/µs - prevents false triggering in noisy high-frequency converters. |
| Low intrinsic capacitance | Coss = 250 pF and Crss = 53 pF - reduces switching loss and improves efficiency in >100 kHz SMPS applications. |
| Improved ESD capability | 4 kV HBM rating - exceeds JEDEC JS-001 Class 3A, reducing handling sensitivity and board-level ESD failures. |
Applications
| Industrial Motor Drives | Server PSU PFC Stages |
|---|---|
|
Use Scenario: Three-phase inverter stage in 1–3 kW variable frequency drives for pumps and compressors. IC Role / Device Role / Timing Role: High-side switch in IGBT/MOSFET half-bridge modules handling 400–800 V DC bus. Use Value: Avalanche ruggedness (EAS = 400 mJ) absorbs regenerative energy during sudden load stops without snubber circuits. |
Use Scenario: Boost switch in active PFC front-end of 1U/2U server power supplies. IC Role / Device Role / Timing Role: Main switching element in continuous conduction mode (CCM) boost converter operating at 65–100 kHz. Use Value: Low Qg (87 nC) and Ciss (2620 pF) enable clean zero-voltage switching (ZVS) transition with minimal gate drive loss. |
| LED Streetlight Drivers | Induction Heating Half-Bridge |
|
Use Scenario: Primary-side switch in isolated flyback LED drivers for outdoor lighting (input 90–305 V AC). IC Role / Device Role / Timing Role: High-voltage primary switch sustaining 800 V breakdown with 10.5 A peak current during startup surges. Use Value: 800 V VDS rating ensures margin against line surges (IEC 61000-4-5 Level 4) without derating. |
Use Scenario: Low-side switch in resonant half-bridge for 20–50 kHz induction heating coils. IC Role / Device Role / Timing Role: Fast-turning, low-loss switch managing high di/dt (≥100 A/µs) and reverse recovery stress. Use Value: Low Qrr (5.9 µC) and fast trr (635 ns) minimize body diode conduction loss and thermal stress during dead-time commutation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP12NK80Z | Same die, TO-220 package; RthJC = 0.66 °C/W but lower PTOT (190 W → 150 W); no isolated tab. | Suitable for lower-power (<150 W) open-frame PSUs where heatsink isolation is not required. | Select when mechanical footprint constraints favor TO-220 and thermal budget allows higher junction temperature rise. |
| IPP60R190C7 | 600 V, 190 mΩ, CoolMOS™ P7; lower RDS(on) but reduced voltage margin; Qg = 53 nC. | Better for 230 V AC input PFC where 600 V rating suffices; not suitable for universal-input or 400 V DC bus designs. | Choose only if system input is strictly ≤265 V AC and efficiency at light load is prioritized over surge robustness. |
Compared with STP12NK80Z, STW12NK80Z offers superior thermal performance and isolated mounting; versus IPP60R190C7, it trades lower conduction loss for essential 800 V rating and avalanche hardness in harsh industrial environments.
Availability
STW12NK80Z is available at Aetrix Electronics and suitable for industrial motor drives, server PSU PFC stages, LED streetlight drivers, and induction heating half-bridge circuits requiring stable component supply and long-term manufacturability.
Supply support for STW12NK80Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.
STW12NK80Z belongs to the SuperMESH Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600–1000 V offline power conversion systems where ruggedness and voltage margin are non-negotiable.
FAQ
Is STW12NK80Z pin-compatible with STP12NK80Z?
No - STW12NK80Z uses TO-247 with isolated tab and three leads in linear order (G-D-S), while STP12NK80Z uses TO-220 with non-isolated tab and identical pinout (G-D-S) but different mechanical dimensions and thermal interface. PCB layout and heatsink mounting must be redesigned.
What is the maximum recommended gate resistor value for reliable switching?
For 100 kHz operation with 1 A peak gate driver, RG = 4.7 Ω is validated per datasheet test conditions (td(on) = 30 ns, td(off) = 70 ns). Values above 10 Ω increase switching time and loss; below 2.2 Ω risk ringing and overshoot due to low Ciss/Crss ratio.
Does STW12NK80Z require external gate protection?
No - its integrated Zener diode clamps VGS to ±30 V, covering all standard gate driver outputs and transient coupling. External TVS is unnecessary unless system-level ESD exceeds 4 kV HBM or gate traces exceed 5 cm without shielding.
Can STW12NK80Z replace STW20NK50Z in existing designs?
No - STW20NK50Z is a 500 V, 20 A device with different RDS(on), Qg, and avalanche rating. STW12NK80Z has higher voltage rating but lower current capability (10.5 A vs. 20 A) and cannot handle the same load current without thermal derating or parallel configuration.
STW12NK80Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SuperMESH™
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 800 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 750mOhm @ 5.25A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 87 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2620 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247-3
STW12NK80Z FAQ
1.How can I place an order for STW12NK80Z through Aetrix?
Please submit a Request for Quotation (RFQ) for STW12NK80Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STW12NK80Z reliable?
The price and inventory of STW12NK80Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW12NK80Z is usually 5 days.
3.What payment methods are accepted for STW12NK80Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW12NK80Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STW12NK80Z?
STW12NK80Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STW12NK80Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STW12NK80Z?
For technical support, including STW12NK80Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW12NK80Z requirements.
6.How does Aetrix verify that STW12NK80Z is sourced from the original manufacturer or authorized distributors?
All STW12NK80Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW12NK80Z meets industry standards.
7.What is the process for return or replacement of STW12NK80Z?
All STW12NK80Z units undergo pre-shipment inspection (PSI). If there is an issue with STW12NK80Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STW12NK80Z part is unused and in its original packaging.
Return procedure for STW12NK80Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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