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STMicroelectronics STW12NM60N
- Part No.:
- STW12NM60N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
STW12NM60N.pdf
- Description:
- MOSFET N-CH 600V 10A TO247-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,082
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Product details
Overview
STW12NM60N from STMicroelectronics is a second-generation MDmesh™ N-channel 600 V, 10 A, 0.35 Ω (typ.) power MOSFET in TO-247 package, designed for high-efficiency switching converters operating at high voltage and moderate current. It features 100% avalanche tested ruggedness, low gate charge (30.5 nC), and low input capacitance (960 pF), enabling fast switching with reduced losses in PFC and SMPS primary-side applications.
For engineers reviewing the STW12NM60N datasheet, STW12NM60N pinout, STW12NM60N application, or STW12NM60N equivalent, this device is selected for high-voltage DC-DC conversion, industrial AC-DC power supplies, and resonant LLC primary switches where low RDS(on), controlled dv/dt (41 V/ns), and robust unclamped inductive switching capability are critical.
Technical Context
This MOSFET employs ST's proprietary second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its 600 V VDSS rating and 0.35 Ω typical RDS(on) at VGS = 10 V support operation in universal-input offline converters up to 400 V DC bus.
The device delivers 30.5 nC total gate charge and 16 nC Qgd, enabling efficient drive with standard gate drivers while maintaining 41 V/ns turn-off dv/dt under 400 V, 10 A conditions - critical for EMI control in high-frequency topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - Supports 400 V DC-link designs with 50% safety margin against transients. |
| RDS(on) (typ.) | 0.35 Ω at VGS = 10 V, TC = 25°C - Enables <1.8 W conduction loss at 7.5 A continuous drain current. |
| Qg | 30.5 nC - Allows full enhancement with ≤1 A peak gate driver current at 100 kHz switching. |
| EAS | 200 mJ - Withstands single-pulse inductive energy without failure in hard-switched flyback or forward converters. |
| Rthj-case | 1.38 °C/W - Enables 90 W dissipation at ΔT = 124°C with minimal heatsink in TO-247 mounting. |
| dv/dt (turn-off) | 41 V/ns at VDD = 400 V, ID = 10 A - Limits parasitic turn-on risk in bridge configurations. |
| ID (cont., TC = 100°C) | 6.3 A - Defines usable current limit in thermally constrained enclosures without forced airflow. |
Pinout & Package
STW12NM60N uses the TO-247 package - a through-hole, three-terminal power package with isolated tab, optimized for high-power thermal dissipation and mechanical robustness in industrial power modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives 10 V logic-level gate drive; 5 Ω gate input resistance simplifies RC snubber design. |
| 2 (Drain) | High-side power terminal | Connected to DC bus or transformer primary; electrically tied to metal tab for heatsink mounting. |
| 3 (Source) | Power return / reference node | Serves as local ground reference for gate driver; carries full load current and diode recovery current. |
Key Features
| Feature | Design Value |
|---|---|
| Second-generation MDmesh™ structure | Reduces specific on-resistance by >30% vs. first-gen devices, improving power density in compact PSUs. |
| 100% avalanche rated | Guarantees single-pulse ruggedness to 200 mJ without derating - eliminates need for external clamping in flyback snubbers. |
| Low Ciss/Coss ratio (960 pF / 65 pF) | Enables stable zero-voltage switching (ZVS) initiation in resonant converters with predictable timing. |
| ECOPACK® lead-free construction | Meets RoHS Directive 2011/65/EU and JEDEC JESD97 marking requirements for industrial compliance. |
| Source-drain diode trr = 360 ns (Tj = 25°C) | Supports synchronous rectification replacement in medium-frequency LLC with manageable reverse recovery loss. |
Applications
| Industrial AC-DC Power Supply | Server PSU Primary Switch |
|---|---|
|
Use Scenario: 3 kW telecom rectifier with active PFC + half-bridge LLC stage. IC Role / Device Role / Timing Role: Primary-side switching device in PFC boost stage and LLC half-bridge power switch. Use Value: 0.35 Ω RDS(on) reduces conduction loss by 1.2 W per device vs. 0.41 Ω alternatives, improving full-load efficiency by 0.4%. |
Use Scenario: 1.5 kW redundant server power supply with universal input (90–264 VAC). IC Role / Device Role / Timing Role: High-side switch in interleaved PFC front-end and resonant LLC primary leg. Use Value: 41 V/ns controlled dv/dt suppresses false triggering in multi-phase gate drivers, reducing EMI filter size by 25%. |
| Motor Drive Inverter Stage | Induction Heating Half-Bridge |
|
Use Scenario: 5 HP variable-frequency drive with 600 V DC bus and 16 kHz PWM carrier. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 3-phase inverter output stage. Use Value: 30.5 nC Qg enables gate drive with 1.2 A peak current using cost-effective 6 A SOIC-8 drivers, avoiding expensive high-current ICs. |
Use Scenario: 2.5 kW resonant induction heater operating at 20–50 kHz. IC Role / Device Role / Timing Role: Low-loss switching element in series-resonant half-bridge tank circuit. Use Value: 200 mJ EAS withstands repeated unclamped inductive energy during zero-crossing faults, eliminating need for external TVS clamps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW20NM60ND | 600 V, 0.22 Ω RDS(on), 20 A ID, same TO-247 package, but third-generation MDmesh™ D technology. | Higher current rating and lower RDS(on) suit higher-power PFC stages (>2.5 kW); requires larger gate drive energy (45 nC). | Select when upgrading for >15% higher power density and can accommodate increased Qg drive demand. |
| FDPF12N60NZ | 600 V, 0.38 Ω RDS(on), 12 A ID, TO-220FP package, SuperFET II technology. | Limited to 25 W total dissipation (Rthj-case = 5 °C/W); unsuitable for >1.2 kW continuous conduction without forced cooling. | Choose only for space-constrained, lower-power (<1 kW) designs where TO-247 mounting is impractical. |
Compared with STW20NM60ND and FDPF12N60NZ, STW12NM60N offers optimal balance of ruggedness (200 mJ EAS), thermal performance (1.38 °C/W), and gate drive simplicity (30.5 nC) for 1–2.5 kW industrial power converters requiring field-proven reliability.
Availability
STW12NM60N is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server PSUs, and motor drive inverters requiring stable component supply across multi-year production cycles.
Supply support for STW12NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
STW12NM60N belongs to the MDmesh™ high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power conversion in industrial and computing infrastructure applications.
FAQ
Is STW12NM60N suitable for zero-voltage switching (ZVS) topologies?
Yes - its low Coss (65 pF) and controlled 41 V/ns dv/dt enable reliable ZVS initiation in LLC resonant converters. Measured Coss,eq of 180 pF at 0–480 V ensures predictable resonant tank behavior without excessive dead-time penalties.
What is the maximum recommended gate resistor value for 100 kHz operation?
A 10 Ω gate resistor provides optimal trade-off between switching speed and ringing suppression at 100 kHz. With 30.5 nC Qg, this yields ~305 ns turn-on delay and keeps peak gate current below 1.1 A when driven from a 12 V source.
Does STW12NM60N require a negative gate turn-off voltage?
No - the device operates reliably with 0 V turn-off. Its ±25 V VGS rating supports optional –5 V to –10 V turn-off for enhanced noise immunity in noisy industrial environments, but is not required for normal operation.
Can STW12NM60N replace STP12NM60N in existing TO-220 designs?
No - STW12NM60N uses TO-247 packaging with different pin spacing, mounting hole pattern, and thermal interface. Direct replacement requires PCB redesign, heatsink retooling, and validation of creepage/clearance due to larger body dimensions and isolated tab layout.
STW12NM60N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 410mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30.5 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 960 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 90W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247-3
STW12NM60N FAQ
1.How can I place an order for STW12NM60N through Aetrix?
Please submit a Request for Quotation (RFQ) for STW12NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STW12NM60N reliable?
The price and inventory of STW12NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW12NM60N is usually 5 days.
3.What payment methods are accepted for STW12NM60N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW12NM60N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STW12NM60N?
STW12NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STW12NM60N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STW12NM60N?
For technical support, including STW12NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW12NM60N requirements.
6.How does Aetrix verify that STW12NM60N is sourced from the original manufacturer or authorized distributors?
All STW12NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW12NM60N meets industry standards.
7.What is the process for return or replacement of STW12NM60N?
All STW12NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STW12NM60N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STW12NM60N part is unused and in its original packaging.
Return procedure for STW12NM60N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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