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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW13N80K5

Name: STW13N80K5
Brand: STMicroelectronics
SKU: STW13N80K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW13N80K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW13N80K5.pdf

Description:: MOSFET N-CH 800V 12A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW13N80K5 from STMicroelectronics is an N-channel 800 V, 370 mΩ typ. (450 mΩ max), 12 A MDmesh K5 Power MOSFET in TO-247 package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial inverters. It features ultra-low gate charge (29 nC), Zener-protected gate, and 100% avalanche tested to 148 mJ.

For engineers reviewing the STW13N80K5 datasheet, STW13N80K5 pinout, STW13N80K5 application, or STW13N80K5 equivalent, this device is selected for high-efficiency, high-reliability 600–800 V DC-link switching where low R_DS(on), rugged dv/dt performance (50 V/ns), and integrated body diode recovery (Q_rr = 5.7 µC) are critical.

Technical Context

This MOSFET employs ST's MDmesh K5 vertical superjunction architecture, enabling a figure of merit (R_DS(on) × Q_g) of ~10.5 Ω·nC - significantly lower than prior-generation 800 V devices. Its 50 V/ns MOSFET dv/dt ruggedness and 4.5 V/ns diode recovery dv/dt ensure stable operation under fast-switching, inductive-load conditions.

The device integrates a Zener-protected gate structure (±30 V rating) and undergoes 100% unclamped inductive switching (UIS) testing at I_AR = 4 A. Thermal resistance R_thJC is 0.66 °C/W in TO-247, supporting high-power density designs with external heatsink mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - supports 600 V DC-link systems with ≥20% voltage margin for surge and ripple
R_DS(on) max	450 mΩ at V_GS = 10 V, I_D = 6 A - enables <1.5 W conduction loss at 12 A continuous current
Q_g	29 nC - reduces gate drive power and enables >100 kHz hard-switching with standard drivers
E_AS	148 mJ (T_J = 25 °C) - withstands single-pulse energy events without failure in PFC or flyback snubbers
dv/dt ruggedness	50 V/ns - prevents spurious turn-on during high-speed commutation in bridge configurations
I_D cont @ T_C = 100 °C	7.6 A - defines usable current derating for sustained operation in enclosed industrial enclosures
V_SD	1.5 V @ I_SD = 12 A - body diode forward drop impacts synchronous rectification efficiency and thermal balance

Pinout & Package

STW13N80K5 is housed in a TO-247 package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulated mounting hardware when used in high-side or half-bridge topologies.

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate (G)	Control input; requires ≤±30 V drive; Zener-clamped to prevent ESD-induced damage
2 (Lead)	Drain (D)	Main high-voltage power path; electrically tied to metal tab; must be isolated from heatsink unless referenced to same potential
3 (Lead)	Source (S)	Power return and reference node for gate drive; carries full load current and body diode reverse recovery charge
Tab	Drain (D)	Primary thermal path and high-current drain connection; not electrically isolated from Pin 2

Key Features

Feature	Design Value
Ultra-low gate charge	29 nC total - cuts gate driver losses by >40% vs. legacy 800 V MOSFETs, enabling smaller gate resistors and faster transitions
Zener-protected gate	±30 V rating with integrated clamp - eliminates need for external gate protection in most industrial control environments
100% avalanche tested	Single-pulse E_AS = 148 mJ - guarantees robustness against inductive switching faults without derating
MDmesh K5 technology	370 mΩ typ. R_DS(on) at 800 V - achieves power density comparable to 650 V devices while maintaining 800 V system margin
Low Crss / high dv/dt immunity	2 pF reverse transfer capacitance - suppresses Miller-induced false turn-on in high-di/dt applications like motor drives

Applications

Industrial AC-DC PFC

Offline SMPS Primary Switch

Use Scenario: Boost converter in 3.3 kW telecom rectifier operating at 100 kHz with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Main switching element in continuous conduction mode (CCM) boost stage; handles 12 A peak current and 800 V blocking.

Use Value: Low Q_g and R_DS(on) reduce total losses by 1.2 W vs. predecessor, improving efficiency from 94.3% to 94.8% at full load.

Use Scenario: Primary-side switch in 1.5 kW open-frame server PSU using asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: High-side switch subjected to 650 V DC-link and 50 V/ns voltage transients during dead-time commutation.

Use Value: 50 V/ns dv/dt ruggedness prevents unintended turn-on; 148 mJ E_AS absorbs leakage inductance spikes without snubber redesign.

Solar Microinverter DC-Link

Induction Heating Half-Bridge

Use Scenario: DC-link switch in 300 W microinverter interfacing PV panel (V_OC up to 720 V) to H-bridge inverter stage.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch controlling energy transfer into DC-link capacitor; operates at 40–80 kHz.

Use Value: 370 mΩ typ. R_DS(on) limits conduction loss to <0.5 W at 8 A RMS, reducing heatsink size by 35% versus 600 V alternatives.

Use Scenario: Low-side switch in 5 kW resonant induction heater running at 20–50 kHz with high di/dt (>500 A/µs) during zero-voltage switching.

IC Role / Device Role / Timing Role: Fast-recovery body diode conducts reverse current during dead time; Q_rr = 5.7 µC minimizes switching loss and EMI.

Use Value: Low Q_rr and soft recovery (t_rr = 406 ns) reduce diode-related losses by 30% and eliminate need for external anti-parallel SiC Schottky.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP13N80K5	Same die, TO-220 package; R_thJC = 3.57 °C/W vs. 0.66 °C/W (TO-247); lower P_TOT (35 W vs. 190 W)	Restricted to <150 W continuous output due to thermal limits; unsuitable for forced-air or high-ambient industrial use	Select only for cost-sensitive, low-power (<100 W), naturally cooled designs where PCB space is constrained.
IPW65R041CFD7	650 V, 41 mΩ SiC MOSFET; higher V_GS(th) (3.5 V), lower Q_g (22 nC), but no integrated Zener protection	Requires external gate clamping; superior efficiency above 100 kHz but lacks 800 V margin for 400 VAC+ systems	Prefer for >150 kHz resonant converters where 650 V rating suffices and SiC gate drive infrastructure exists.

Compared with STP13N80K5, STW13N80K5 delivers 5.7× lower junction-to-case thermal resistance and 5.4× higher power dissipation capability - essential for industrial 1–3 kW systems. Versus IPW65R041CFD7, it trades 650 V SiC efficiency for guaranteed 800 V ruggedness and integrated gate protection in legacy 400–600 V AC-line designs.

Availability

STW13N80K5 is available at Aetrix Electronics and suitable for industrial AC-DC PFC, offline SMPS primary switching, and solar microinverter DC-link applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STW13N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, automotive ICs, and industrial microcontrollers.

STW13N80K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW13N80K5 supports 7.6 A continuous drain current when the case temperature (T_C) is maintained at 100 °C, as specified in Table 1 of DS9526 Rev 6. This derating reflects thermal limitations of the TO-247 package under real-world heatsink conditions and must be verified using R_thJC = 0.66 °C/W and ambient thermal design.

Does STW13N80K5 include integrated gate protection?

Yes - STW13N80K5 features an integrated Zener diode between gate and source, rated for ±30 V, providing inherent protection against electrostatic discharge and transient overvoltage on the gate terminal without requiring external components in standard industrial layouts.

How does its body diode performance compare to standard silicon MOSFETs?

At I_SD = 12 A, the body diode forward voltage is 1.5 V (typ.), and reverse recovery charge is 5.7 µC (typ.) at 25 °C - significantly lower than conventional 800 V MOSFETs. This results in reduced switching loss and EMI during hard-commutation, especially in PFC and half-bridge topologies.

Is STW13N80K5 suitable for use in avalanche-mode circuits?

Yes - every unit undergoes 100% unclamped inductive switching (UIS) testing per JEDEC JESD24-11, with a guaranteed single-pulse avalanche energy (E_AS) of 148 mJ at T_J = 25 °C. This makes it appropriate for snubberless designs and fault-tolerant power stages where inductive energy must be safely absorbed.

STW13N80K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH5™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 450mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 870 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW13N80K5 FAQ

1.How can I place an order for STW13N80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW13N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW13N80K5 reliable?

The price and inventory of STW13N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW13N80K5 is usually 5 days.

3.What payment methods are accepted for STW13N80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW13N80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW13N80K5?

STW13N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW13N80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW13N80K5?

For technical support, including STW13N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW13N80K5 requirements.

6.How does Aetrix verify that STW13N80K5 is sourced from the original manufacturer or authorized distributors?

All STW13N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW13N80K5 meets industry standards.

7.What is the process for return or replacement of STW13N80K5?

All STW13N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STW13N80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW13N80K5 part is unused and in its original packaging.

Return procedure for STW13N80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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