STMicroelectronics STW13N95K3

Overview

STW13N95K3 from STMicroelectronics is an N-channel 950 V, 680 mΩ typ. (850 mΩ max), 10 A MDmesh K3 Power MOSFET in TO-247 package, designed for high-voltage switching in industrial SMPS, PFC stages, and HV DC-DC converters. It features 100% avalanche tested ruggedness, 9 V/ns dv/dt capability, and improved diode reverse recovery (trr = 500 ns, Qrr = 9 µC).

For engineers reviewing the STW13N95K3 datasheet, STW13N95K3 pinout, STW13N95K3 application, or STW13N95K3 equivalent, key selection criteria include its 950 V V_DS, low R_DS(on) at high voltage, TO-247 thermal performance (R_thJC = 0.66 °C/W), and Zener-protected gate robustness.

Technical Context

This device leverages ST's MDmesh K3 vertical structure to achieve ultra-low specific on-resistance while maintaining high breakdown voltage. Its optimized cell layout reduces intrinsic capacitance (C_iss = 1620 pF, C_oss = 117 pF) and enables fast switching (t_d(off) = 50 ns, t_f = 21 ns) under hard-switching conditions.

The integrated Zener-protected gate ensures ±30 V V_GS tolerance, and the source-drain diode delivers low V_SD = 1.6 V at 10 A with controlled reverse recovery (Q_rr = 9 µC, I_RRM = 36 A), critical for reducing EMI and snubber losses in flyback and resonant topologies.

Key Specifications

Pinout & Package

STW13N95K3 uses the TO-247 package: a through-hole, thermally enhanced 3-pin power package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulated mounting hardware when mounted to heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP13N95K3 and IXTH12N90L2, STW13N95K3 uniquely combines 950 V rating, sub-1 Ω R_DS(on), Zener gate protection, and TO-247 thermal performance-making it the only choice for compact, high-reliability 1 kW+ industrial SMPS where avalanche robustness and dv/dt immunity are non-negotiable.

Availability

STW13N95K3 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, active PFC stages, high-voltage DC-DC converters, and motor drive brake choppers requiring stable component supply across multi-year production cycles.

Supply support for STW13N95K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with strong industrial and energy infrastructure focus.

STW13N95K3 belongs to the MDmesh K3 family-engineered specifically for high-efficiency, high-reliability high-voltage power conversion in industrial, telecom, and renewable energy systems where ruggedness and thermal performance are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW13N95K3 supports 6 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS6262 Rev 4. This derating reflects thermal limits of the TO-247 package and ensures safe operation within the SOA boundary at elevated ambient temperatures with adequate heatsinking.

Does STW13N95K3 require external gate protection?

No. STW13N95K3 integrates a Zener diode between gate and source, providing ±30 V transient overvoltage protection. External gate clamping is unnecessary unless system-level transients exceed this rating-verified by ST's 100% production avalanche and gate stress testing.

How does its reverse recovery performance compare to standard silicon diodes?

With trr = 500 ns and Qrr = 9 µC at 10 A, STW13N95K3's body diode outperforms conventional FRDs (typically Qrr > 30 µC) and matches fast recovery diodes used in PFC. Its soft recovery characteristic also reduces voltage overshoot and EMI compared to abrupt-recovery devices.

Can STW13N95K3 replace STP13N95K3 in existing TO-220 layouts?

No-STW13N95K3 uses TO-247, which has different pin spacing (10.16 mm vs. 2.54 mm), larger footprint, and drain-connected tab orientation. Direct replacement requires PCB redesign, heatsink retooling, and gate drive layout review due to higher peak gate current demand from increased Qg (51 nC vs. ~45 nC).